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Projects/Programs

Displaying 1 - 25 of 73

Electronic Material Characterization

Ongoing
To provide the necessary information for electronic material manufacturers to predict how and when failures will occur and enable lifetime analysis appropriate

Electron-Solid Interactions

Ongoing
Fundamental understanding of electron-solid interactions is key to interpreting electron microscopy images for quantitative metrology. Scanning electron

EUV Scatterometry

Ongoing
The state of the art for measurement and inspection of the smallest printed features on an integrated circuits (IC) chip is a combination of electron scanning

Extreme Atom Probe Tomography

Ongoing
NIST is engaged in a joint effort between the Material Measurement Laboratory (MML) and the Physical Measurement Laboratory (PML) aimed at revolutionizing 3D

Extreme ultraviolet optical constants

Ongoing
In the vacuum ultraviolet and extreme ultraviolet (EUV), the indices of refraction of all materials become complex: N = n + ik , or N = 1- d + ik . Here, n is

GaN Nanowire Growth

Ongoing
GaN nanowires grown by catalyst-free molecular beam epitaxy have the unique property that most nanowires are completely free of crystalline defects. This

GaN Nanowire Metrology and Applications

Ongoing
We synthesize semiconductor nanostructures to serve both as test structures for measurement techniques and as building blocks for novel metrology tools and

Genomics of Electronic Materials

Ongoing
Our goal is to develop the metrology to enable a materials genomic approach to the discovery and optimization of complex electronic and electromagnetic