TY - JOUR AU - Mark Anders AU - Patrick Lenahan AU - Arthur Edwards AU - Peter Schultz AU - Renee Van Ginhoven C2 - Journal of Applied Physics DA - 2018-11-13 05:11:00 DO - https://doi.org/10.1063/1.5045668 LA - en M1 - 124 PB - Journal of Applied Physics PY - 2018 TI - Effects of Nitrogen on the Interface Density of States Distribution in 4H-SiC Metal Oxide Semiconductor Field Effect Transistors: Super-hyperfine Interactions and Near Interface Silicon Vacancy Energy Levels ER -