TY  - JOUR
AU  - Chbili, Zakariae
AU  - Matsuda, Asahiko
AU  - Chbili, Jaafar
AU  - Ryan, Jason
AU  - Campbell, Jason
AU  - Lahbabi, Mhamed
AU  - Ioannou, D.
AU  - Cheung, Kin
C2  - IEEE Transactions on Electron Devices
DA  - 2016-07-14 00:07:00
LA  - en
PB  - IEEE Transactions on Electron Devices
PY  - 2016
TI  - Modeling early breakdown failures of gate oxide in SiC power MOSFETs
UR  - https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=918860
ER  -