TY  - GEN
AU  - D R Myers
C2  - , National Institute of Standards and Technology, Gaithersburg, MD
DA  - 1980-01-01 05:01:00
DO  - https://doi.org/10.6028/NBS.SP.400-60
LA  - en
PB  - , National Institute of Standards and Technology, Gaithersburg, MD
PY  - 1980
TI  - Technical impediments to a more effective utilization of neutron transmutation doped silicon for high-power device fabrication:
ER  -