TY  - GEN
AU  - W R Thurber
AU  - R L Mattis
AU  - Liu Y and
AU  - J J Filliben
C2  - , National Institute of Standards and Technology, Gaithersburg, MD
DA  - 1981-01-01 05:01:00
DO  - https://doi.org/10.6028/NBS.SP.400-64
LA  - en
PB  - , National Institute of Standards and Technology, Gaithersburg, MD
PY  - 1981
TI  - The relationship between resistivity and dopant density for phosphorus-and boron-doped silicon:
ER  -