@conference{242876,
  author = {Kin Cheung},
  title = {SiC power MOSFET gate oxide breakdown reliability – Current status},
  year = {2018},
  month = {2018-05-03},
  publisher = {2018 IEEE International Reliability Physics Symposium (IRPS), Burlingame, CA},
  doi = {https://doi.org/10.1109/IRPS.2018.8353545},
  language = {en},
}