@article{228531,
  author = {Neil Zimmerman and W Huber and Brian Simonds and Emmanouel Hourdakis and Fujiwara Fujiwara and Yukinori Ono and Yasuo Takahashi and Hiroshi Inokawa and Miha Furlan and Mark Keller},
  title = {Why the long-term charge offset drift in Si single-electron tunneling transistors is much smaller (better) than in metal-based ones: Two-level fluctuator stability},
  year = {2008},
  number = {104},
  month = {2008-08-07},
  publisher = {Journal of Applied Physics},
  doi = {https://doi.org/10.1063/1.2949700},
  language = {en},
}