@article{1314991,
  author = {Zakariae Chbili and Asahiko Matsuda and Jaafar Chbili and Jason Ryan and Jason Campbell and Mhamed Lahbabi and D. Ioannou and Kin Cheung},
  title = {Modeling early breakdown failures of gate oxide in SiC power MOSFETs},
  year = {2016},
  month = {2016-07-14 00:07:00},
  publisher = {IEEE Transactions on Electron Devices},
  url = {https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=918860},
  language = {en},
}