Title: TIME-RESOLVED FOURIER TRANSFORM INFRARED SPECTROSCOPY DURING ATOMIC LAYER DEPOSITION

B. A. Sperling, W. A. Kimes, and J. E. Maslar

Process Measurements Division, Chemical Science and Technology Laboratory, NIST Gaithersburg, MD 20899.

Atomic layer deposition (ALD) of high-k dielectrics is one of the key processes that have enabled CMOS-based integrated circuits to advance beyond the 45-nm technology node.  This poster will describe recent work involving time-resolved, gas-phase FTIR measurements of a flow-type reactor during ALD of hafnium oxide. An organometallic source is used for hafnium, and water is used as an oxidizer.  By using the cyclical nature of ALD for signal averaging, good signal-to-noise ratios can be obtained permitting measurement of precursor and product concentrations with ~ 100 ms time resolution.  Comparison with other in situ measurements of the ALD reactor are presented, and the potential for FTIR to be used as a process optimization tool is demonstrated.

CATEGORY: Chemistry

Mentors Name:  James Maslar

Process Measurements, CSTL

Rm. B316, Bldg. 221, MS 8360

Tel:  301-975-2565

Fax:  301-869-5924

Email:  brent.sperling@nist.gov

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