Title: TIME-RESOLVED FOURIER TRANSFORM INFRARED SPECTROSCOPY DURING ATOMIC LAYER DEPOSITION
B. A. Sperling, W. A. Kimes, and J. E. Maslar
Process Measurements Division, Chemical Science and Technology Laboratory, NIST Gaithersburg, MD 20899.
Atomic layer deposition (ALD) of high-k dielectrics is one of the key processes that have enabled CMOS-based integrated circuits to advance beyond the 45-nm technology node. This poster will describe recent work involving time-resolved, gas-phase FTIR measurements of a flow-type reactor during ALD of hafnium oxide. An organometallic source is used for hafnium, and water is used as an oxidizer. By using the cyclical nature of ALD for signal averaging, good signal-to-noise ratios can be obtained permitting measurement of precursor and product concentrations with ~ 100 ms time resolution. Comparison with other in situ measurements of the ALD reactor are presented, and the potential for FTIR to be used as a process optimization tool is demonstrated.
Mentors Name: James Maslar
Process Measurements, CSTL
Rm. B316, Bldg. 221, MS 8360
Is your mentor a Sigma Xi Member? No