Small Angle X-Ray Scattering Measurements of Lithographic Patterns with Sidewall Roughness from Vertical Standing Waves
Chengqing Wang, Ronald L. Jones, Eric K. Lin and Wen-Li Wu
Polymers Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899
Jim Leu
Department Materials Science and Engineering, National Chiao Tung University, Hsinchu, Taiwan
Small angle x-ray scattering (SAXS) measurements are used to quantify the wavelength and amplitude of the sidewall roughness in a lithographic line:space pattern due to vertical standing waves present during the photoresist exposure. Analytic equations are derived to model the x-ray scattering intensity and are used to determine the periodicity and amplitude of the standing wave roughness. The average periodicity, or pitch, and the line width were L = (422 ± 1) nm and w0 = (148 ± 1) nm. The period and amplitude of the standing wave roughness were ls = (65 ± 1) nm and As = (3.0 ± 0.5) nm. These results demonstrate the potential of SAXS measurements to quantify nondestructively and quantitatively dimensional deviations from an ideal structure.
Author information:
Chengqing Wang
Mentor: Eric K. Lin and Wen-li Wu
Polymers Division
Bldg 224 room A304
MS 8541
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not a member of Sigma Xi
Poster Category: Materials