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Displaying records 921 to 930 of 1000 records.
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921. Calibration of Scanning Electron Microscope Magnification Standards SRM-484
Topic: Manufacturing
Published: 5/1/1996
Authors: Joseph Fu, Theodore Vincent Vorburger, D Ballard
Abstract: Standard Reference Material (SRM) 484 is an artifact for calibrating the magnification scale of a scanning electron microscope. Since 1977 the National Institute of Standards and Technology (NIST) has produced seven issues of SRM484 amounting to app ...

922. Electrical Test Structures Replicated in Silicon-On-Insulator Material
Topic: Manufacturing
Published: 5/1/1996
Authors: Michael W. Cresswell, J Sniegowski, Rathindra Ghoshtagore, Robert Allen, L Linholm, John S Villarrubia
Abstract: Measurements of the linewidths of submicrometer features made by different metrology techniques have frequently been characterized by differences of up to 90 nm. The purpose of the work reported here is to address the special difficulties that this p ...

923. High Accuracy Overlay Measurements
Topic: Manufacturing
Published: 5/1/1996
Authors: Richard M Silver, James Edward Potzick, Fredric Scire, Robert D. Larrabee
Abstract: The reduced critical dimensions of semiconductor devices place more stringent requirements on the precision and accuracy of overlay metrology tools used to monitor stepper feature placement. The use of mix and match stepper techniques and step and sc ...

924. High-Accuracy Critical-Dimension Metrology Using a Scanning Electron Microscope
Topic: Manufacturing
Published: 5/1/1996
Authors: J R. Lowney, Andras Vladar, Michael T Postek
Abstract: Two Monte Carlo computer codes have been written to simulate the transmitted-, backscattered-, and secondary-electron signals from targets in a scanning electron microscope. The first discussed, MONSEL-II, is applied to semi-infinite lines produced l ...

925. International Comparison of Photomask Linewidth Standards: U.S. (NIST) and U.K. (NPL)
Topic: Manufacturing
Published: 5/1/1996
Authors: James Edward Potzick, J Nunn
Abstract: Photomask linewidth standards serve as primary standards for the calibration of photomask metrology tools and are available from the national standards organizations of several countries. These standards are often in the form of chrome-on-quartz phot ...

926. Measurement of a CD and Sidewall Angle Artifact with Two Dimensional CD AFM Metrology
Topic: Manufacturing
Published: 5/1/1996
Authors: Ronald G Dixson, N. Sullivan, J Schneir, T Mcwaid, V W. Tsai, J Prochazka, M. Young
Abstract: Despite the widespread acceptance of SEM metrology in semiconductor manufacturing, there is no SEM CD standard currently available. Producing such a standard is challenging because SEM CD measurements are not only a function of the linewidth, but als ...

927. New Algorithm for the Measurement of Pitch in Metrology Instruments
Topic: Manufacturing
Published: 5/1/1996
Authors: Nien F Zhang, Michael T Postek, Robert D. Larrabee, L Carroll, William J. Keery
Abstract: Traditionally, the measurement of pitch in metrology instruments is thought to be a benign self-compensating function. However, as the measurement uncertainty of metrology instruments is pushed to the nanometer level, evaluation of the performance of ...

928. SEM Performance Evaluation Using the Sharpness Criterion
Topic: Manufacturing
Published: 5/1/1996
Authors: Michael T Postek, Andras Vladar
Abstract: Fully automated or semi-automated scanning electron microscopes (SEM) are now commonly used in semiconductor production and other forms of manufacturing. The industry requires that an automated instrument must be routinely capable of 5 nm resolution ...

929. Toward Accurate Linewidth Metrology Using Atomic Force Microscopy and Tip Characterization
Topic: Manufacturing
Published: 5/1/1996
Authors: Ronald G Dixson, J Schneir, T Mcwaid, N. Sullivan, V W. Tsai, S Zaidi, S Brueck
Abstract: As the critical dimensions of integrated circuit features decrease toward 0.18 um, feature width measurements with nanometer level accuracy will become increasingly important to the semiconductor processing industry. Atomic force microscopy (AFM) off ...

930. Models for Relating Scanning Electron Microscopy Images to Measured Artifacts
Topic: Manufacturing
Published: 4/1/1996
Authors: Michael T Postek, Andras Vladar, J R. Lowney
Abstract: A specific example of a technique we developed to enhance the information obtained from SEM images is the extraction of an approximate profile corresponding to an electron beam with zero beam diameter from one with a finite beam diameter. Results wer ...

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