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Topic Area: Optical Metrology
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Displaying records 1 to 10 of 112 records.
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1. Precise Measurement of Lunar Spectral Irradiance at Visible Wavelengths
Series: Journal of Research (NIST JRES)
Report Number: 118.020
Topic: Optical Metrology
Published: 11/12/2013
Authors: Keith R Lykke, John Taylor Woodward IV, Allan W. Smith
Abstract: We report a measurement of lunar spectral irradiance with an uncertainty below 1 % from 420 nm to 1000 nm. This measurement uncertainty meets the stability requirement for many climate data records derived from satellite images, including those f ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913841

2. Assessing consistency of a Mueller matrix measurement by rotation of the sample under test
Topic: Optical Metrology
Published: 9/27/2013
Author: Thomas Avery Germer
Abstract: We present a method for checking the consistency of a Mueller matrix measurement. The method is based upon the rotational properties of a Mueller matrix. The sample is placed in the polarimeter in a precision rotation stage. The Mueller matrix is th ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=914354

3. Fourier Domain Optical Tool Normalization for Quantitative Parametric Image Reconstruction
Topic: Optical Metrology
Published: 9/5/2013
Authors: Jing Qin, Richard M Silver, Bryan M Barnes, Hui Zhou, Francois R. (Francois) Goasmat
Abstract: There has been much recent work in developing advanced optical metrology methods that use imaging optics for critical dimension measurements and defect detection. Sensitivity to nanometer scale changes has been observed when measuring critical dimens ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913587

4. 3-D Optical Metrology of Finite sub-20nm Dense Arrays With sub-nanometer Parametric Uncertainties
Topic: Optical Metrology
Published: 6/23/2013
Authors: Jing Qin, Hui Zhou, Bryan M Barnes, Ronald G Dixson, Richard M Silver
Abstract: A new approach that involves parametric fitting of 3-D scattered field with electromagnetic simulation, Fourier domain normalization, and uncertainties analysis is presented to rigorously analyze 3-D through-focus optical images of targets that scatt ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913511

5. Spectral responsivity based calibration of photometer and colorimeter standards
Topic: Optical Metrology
Published: 6/19/2013
Author: George P Eppeldauer
Abstract: Several new generation transfer- and working-standard illuminance meters and tristimulus colorimeters have been developed at the National Institute of Standards and Technology (NIST) to measure all kinds of light sources with low uncertainty. The spe ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913528

6. Critical dimension metrology by through-focus scanning optical microscopy beyond the 22 nm node
Topic: Optical Metrology
Published: 6/7/2013
Authors: Ravikiran Attota, Benjamin D. Bunday, Victor Vertanian
Abstract: We present results using simulations and experiments to demonstrate metrological applications of the through-focus scanning optical microscopy (TSOM) down to features at and well below the International Technology Roadmap for Semiconductors' 22  ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913353

7. TSV Reveal height and bump dimension metrology by the TSOM method
Topic: Optical Metrology
Published: 4/30/2013
Authors: Ravikiran Attota, Haesung Park, Victor Vartanian, Ndubuisi George Orji, Richard A Allen
Abstract: Through-focus scanning optical microscopy (TSOM) transforms conventional optical microscopes into truly 3D metrology tools for nanoscale- to- microscale dimensional analysis with nanometer-scale sensitivity. Although not a resolution enhancement meth ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913667

8. Use of TSOM for sub-11 nm node pattern defect detection and HAR features
Topic: Optical Metrology
Published: 4/30/2013
Authors: Ravikiran Attota, Abraham Arceo, Bunday Benjamin
Abstract: In-line metrologies currently used in the semiconductor industry are being challenged by the aggressive pace of device scaling and the adoption of novel device architectures. In defect inspection, conventional bright field techniques will not likely ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913698

9. Enhancing 9 nm Node Dense Patterned Defect Optical Inspection using Polarization, Angle, and Focus
Topic: Optical Metrology
Published: 4/10/2013
Authors: Bryan M Barnes, Francois R. (Francois) Goasmat, Martin Y Sohn, Hui Zhou, Abraham Arceo
Abstract: To measure the new SEMATECH 9 nm node Intentional Defect Array (IDA) and subsequent small, complex defects, a methodology has been used to exploit the rich information content generated when simulating or acquiring several images of sub-wavelength-si ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913542

10. Intercomparison between optical and x-ray scatterometry measurements of FinFET structures
Topic: Optical Metrology
Published: 4/8/2013
Authors: Paul Lemaillet, Thomas Avery Germer, Regis J Kline, Daniel Franklin Sunday, Chengqing C. Wang, Wen-Li Wu
Abstract: In this paper, we present a comparison of profile measurements of vertical field effect transistor (FinFET) fin arrays by optical critical dimension (OCD) metrology and critical dimension small angle X-ray scattering (CD-SAXS) metrology. Spectroscopi ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913230



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