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Topic Area: Electronics
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Displaying records 91 to 100 of 750 records.
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91. Calibration of dynamic sensors for noncontact-atomic force microscopy
Topic: Electronics & Telecommunications
Published: 8/12/2011
Authors: Gordon Allan Shaw, Jon Robert Pratt, Zeina Jabbour Kubarych
Abstract: Access to quantitative information on surface forces in noncontact-atomic force microscopy (NC-AFM) requires the accurate calibration of several key sensor parameters. This work outlines a dynamic method for calibrating the spring constant of tuning ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=906206

92. DETERMINATION OF MEAN DENSITIES, POROSITY AND THICKNESS OF BIOFILMS ATTACHED ON IRREGULAR-SHAPED MEDIA
Topic: Electronics & Telecommunications
Published: 8/10/2011
Authors: Edward Joseph Garboczi, Meng Hu, Tian Zhang
Abstract: Biofilm density, porosity, and thickness are biofilm architecture properties that are important but often difficult to measure. In this study, wet and dry biofilm densities and biofilm porosity in shredded tire biofilters were determined using conven ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908860

93. GaN Nanowires Grown by Molecular Beam Epitaxy
Topic: Electronics & Telecommunications
Published: 8/1/2011
Authors: Kristine A Bertness, Norman A Sanford, Albert Davydov
Abstract: The unique properties of GaN nanowires grown by molecular beam epitaxy are reviewed. These properties include the absence of residual strain, exclusion of most extended defects, long photoluminescence lifetime, low surface recombination velocity,and ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=909502

94. Lithography and Chemical Modeling of Acid Amplfiers for Use in EUV Photoresists
Topic: Electronics & Telecommunications
Published: 7/28/2011
Authors: Kirstin Kruger, craig higgins, Gregg M. Gallatin, Robert Brainard
Abstract: We postulate that the best way to simultaneously improve resolution, line edge roughness (LER), and sensitivity all in EUV resists is to increase the number of acid molecules generated per absorbed photon. In previous work, we showed that acid ampli ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908397

95. O2 A-band line parameters to support atmospheric remote sensing. Part II: The rare isotopologues
Topic: Electronics & Telecommunications
Published: 7/21/2011
Authors: Joseph Terence Hodges, David A Long, Daniel K Havey, S. S. Yu, M Okumura, Charles E Miller
Abstract: Frequency-stabilized cavity ring-down spectroscopy (FS-CRDS) was employed to measure over 100 transitions in the R-branch of the b1Σg+←X3Σg-(0,0) band for the rare O2 isotopologues. The use of 17O- and 18O-enriched mixtures allowed fo ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907932

96. Characterization of the non-uniform reaction in chemically-amplified calix[4]resorcinarene molecular resist thin films
Topic: Electronics & Telecommunications
Published: 7/19/2011
Authors: Vivek M Prabhu, Shuhui Kang, Regis J Kline, Dean M DeLongchamp, Daniel A Fischer, Wen-Li Wu, Sushil K. Satija, Jing Sha, Christopher K. Ober, Peter V. Bonnesen
Abstract: The ccc stereoisomer-purified tert-butoxycarbonyloxy (t-Boc) protected calix[4]resorcinarene molecular resists blended with photoacid generator exhibit a non-uniform photoacid catalyzed reaction in thin films. The surface displays a reduced reaction ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908683

97. In Situ Gas Phase Measurements During Metal Alkylamide Atomic Layer Deposition
Topic: Electronics & Telecommunications
Published: 7/12/2011
Authors: James E Maslar, William Andrew Kimes, Brent A Sperling
Abstract: Metal alkylamide compounds, such as tetrakis(ethylmethylamido) hafnium (TEMAH), represent a technologically important class of metalorganic precursors for the deposition of metal oxides and metal nitrides via atomic layer deposition (ALD) or chemical ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908672

98. Small fluctuations in epitaxial growth via conservative noise
Topic: Electronics & Telecommunications
Published: 7/7/2011
Authors: Paul N. Patrone, Rongrong Wang, Dionisios Margetis
Abstract: We study the combined effect of growth (material deposition from above) and nearest-neighbor entropic and force-dipole interactions in a stochastically perturbed system of N line defects (steps) on a vicinal crystal surface in 1+1 dimensions. Firs ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908523

99. Stable isotope-labeling of DNA repair proteins, and their purification and characterization
Topic: Electronics & Telecommunications
Published: 7/1/2011
Authors: M Miral Dizdar, Pawel Jaruga, Prasad T Reddy, Bryant C Nelson, Mark S Lowenthal
Abstract: Reduced DNA repair capacity is associated with increased risk for a variety of disease processes including carcinogenesis. Thus, DNA repair proteins have the potential to be used as important predictive, prognostic and therapeutic biomarkers in cance ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907266

100. Guided three-dimensional catalyst folding during Metal assisted Chemical Etching of Silicon
Topic: Electronics & Telecommunications
Published: 6/28/2011
Authors: Konrad Rykaczewski, Owen J. Hildreth, Ching P. Wong, Andrei G. Fedorov, John Henry j Scott
Abstract: In order to fabricate truly complex three-dimensional (3D) silicon nanostructures fabrication methods which expand beyond the concept of creation of straight 3D structures by direct extension of two dimensional (2D) patterns need to be developed. In ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908006



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