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You searched on: Topic Area: Condensed Matter Physics Sorted by: title

Displaying records 11 to 20 of 48 records.
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11. Effects of disorder and internal dynamics on vortex wall propagation
Topic: Condensed Matter Physics
Published: 5/26/2010
Authors: Hongki Min, Robert D McMichael, Michael J Donahue, Jacques Miltat, Mark D Stiles
Abstract: Experimental measurements of domain wall propagation are typically interpreted by comparison to ideal models that ignore the effects of extrinsic disorder and the internal dynamics of domain wall structures. Using micromagnetic simulations we study v ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=904963

12. Effects of magnetism and electric field on the energy gap of bilayer graphene nanoflakes
Topic: Condensed Matter Physics
Published: 1/13/2010
Author: Hongki Min
Abstract: We study the effect of magnetism and perpendicular external electric field strengths on the energy gap of length confined bilayer graphene nanoribbons (or nanobars) using a first principles density functional electronic structure method and a semi-lo ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=903804

13. Electrical Characterization of Soluble Anthradithiophene Derivatives
Topic: Condensed Matter Physics
Published: 11/19/2009
Authors: Brad Conrad, Calvin Chan, Marsha A. Loth, John E Anthony, David J Gundlach
Abstract: Organic semiconductors remain an active subject for device physics and material science because of their varied electrical properties and potential for low-cost, high-throughput roll-to-roll processing. Several high-mobility oligomers, such as pen ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905388

14. Electronic properties of multilayer graphene
Topic: Condensed Matter Physics
Published: 3/31/2012
Author: Hongki Min
Abstract: In this chapter, we study the electronic structure of arbitrarily stacked multilayer graphene in the absence or presence of magnetic field. Energy band structure and Landau level spectrum are obtained using a pi-orbital continuum model with nearest-n ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=906671

15. Epitaxial (111) Films of Cu, Ni, and Cu^dx^Ni^dy^ on {alpha}{long dash}Al^d2^O^d3^(0001) for graphene growth by chemical vapor deposition
Topic: Condensed Matter Physics
Published: 9/21/2012
Authors: David L. Miller, Mark W Keller, Justin M Shaw, Ann Chiaramonti Chiaramonti Debay, Robert R Keller
Abstract: Films of (111)-textured Cu, Ni, and Cu^dx^Ni^dy^ were evaluated as substrates for chemical vapor deposition of graphene. A metal thickness of 400 nm to 700 nm was sputtered onto a substrate of {alpha}{long dash}Al^d2^O^d3^(0001) at temperatures of {I ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911229

16. Frequency Dependence of a Cryogenic Capacitor Measured Using Single Electron Tunneling Devices
Topic: Condensed Matter Physics
Published: 12/1/2000
Authors: Ali L Eichenberger, Mark W Keller, John M. Martinis, Neil M Zimmerman
Abstract: A new type of capacitance standrd based on counting electrons has been built. The operation of the standrd has already given very promising results for the determination of the value of a cryogenic vacuum-gap capacitor. The new capacitance standard o ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=5874

17. Giant Secondary Grain Growth in Cu Films on Sapphire
Topic: Condensed Matter Physics
Published: 8/1/2013
Authors: David L. Miller, Mark W Keller, Justin M Shaw, Katherine P. Rice, Robert R Keller, Kyle M. Diederichsen
Abstract: Single crystal metal films on insulating substrates are attractive for microelectronics and other applications, but they are difficult to achieve on macroscopic length scales. The conventional approach to obtaining such films is epitaxial growth at h ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913924

18. HIGHLY CHARGED ION INTERACTIONS WITH THIN INSULATING FILMS
Topic: Condensed Matter Physics
Published: 6/1/2011
Authors: Joshua M Pomeroy, Russell Lake, C E Sosolik
Abstract: The electrical conductance of magnetic tunnel junction (MTJ) devices whose ultra-thin aluminum oxide tunnel barrier was irradiated by highly charged ions (HCIs) increases linearly with the fluence of HCIs, while retaining a current-voltage relationsh ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=906982

19. Identifying capacitive and inductive loss in lumped element superconducting hybrid titanium nitride/aluminum resonators
Topic: Condensed Matter Physics
Published: 6/9/2012
Authors: Martin P. Weides, Jeffrey S. Kline, Martin O. Sandberg, David P Pappas
Abstract: We present a method to systematically locate and extract capacitive and inductive losses in superconductingresonators at microwave frequencies by use of mixed-material, lumped element devices. In these devices, ultra-low loss titanium nitride was ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910578

20. Interference of Single Photons from Two Separate Semiconductor Quantum Dots
Topic: Condensed Matter Physics
Published: 4/1/2010
Authors: Edward B. (Edward) Flagg, Andreas Muller, Sergey V Polyakov, Alexander E. Ling, Glenn Scott Solomon
Abstract: We demonstrate and characterize interference between discrete photons emitted by two separate semiconductor quantum dot states in different samples excited by a pulsed laser. Their energies are tuned into resonance using strain. The photons hav ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=904921



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