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Topic Area: Nanofabrication, Nanomanufacturing, and Nanoprocessing
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Displaying records 21 to 30 of 105 records.
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21. Residual Layer Thickness Control and Metrology in Jet and Flash Imprint Lithography
Topic: Nanofabrication, Nanomanufacturing, and Nanoprocessing
Published: 4/10/2012
Authors: Ravikiran Attota, Shrawan Singhal, Sreenivasan S.V.
Abstract: Jet-and-Flash Imprint Lithography (J-FIL) has demonstrated capability of high-resolution patterning at low costs. For accurate pattern transfer using J-FIL, it is imperative to have control of the residual layer thickness (RLT) of cured resist undern ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910872

22. On CD-AFM bias related to probe bending
Topic: Nanofabrication, Nanomanufacturing, and Nanoprocessing
Published: 4/9/2012
Authors: Vladimir A Ukraintsev, Ndubuisi George Orji, Theodore Vincent Vorburger, Ronald G Dixson, Joseph Fu, Richard M Silver
Abstract: Critical Dimension AFM (CD-AFM) is a widely used reference metrology. To characterize modern semiconductor devices, very small and flexible probes, often 15 nm to 20 nm in diameter, are now frequently used. Several recent publications have reported ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910903

23. Modeling the effects of acid amplifiers on photoresist stochastics
Topic: Nanofabrication, Nanomanufacturing, and Nanoprocessing
Published: 3/23/2012
Authors: Gregg M. Gallatin, Patrick Naulleau, Robert Brainard
Abstract: The tradeoff between Resolution, Line Edge Roughness (LER) and Sensitivity, the so called RLS tradeoff, continues to be a difficult challenge, especially for EUV lithography. Acid amplifiers have recently been proposed as a method to improve upon t ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910777

24. Nanomanufacturing with DNA Origami: Factors Affecting the Kinetics and Yield of Quantum Dot Binding
Topic: Nanofabrication, Nanomanufacturing, and Nanoprocessing
Published: 3/7/2012
Authors: Seung H. Ko, Gregg M. Gallatin, James Alexander Liddle
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907933

25. Nanometrology Using Through-Focus Scanning Optical Microscopy Method
Topic: Nanofabrication, Nanomanufacturing, and Nanoprocessing
Published: 12/21/2011
Authors: Ravikiran Attota, Richard M Silver
Abstract: We present an initial review of a novel through-focus scanning optical microscopy (TSOM) imaging method that produces nanometer dimensional measurement sensitivity using a conventional bright-field optical microscope. In the TSOM method a target is ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905395

26. Structural and electrical properties of Flip Chip Laminated metal-molecule-silicon structures modifying molecular backbone and atomic tether
Topic: Nanofabrication, Nanomanufacturing, and Nanoprocessing
Published: 10/19/2011
Authors: Mariona Coll Bau, Nadine Emily Gergel-Hackett, Curt A Richter, Christina Ann Hacker
Abstract: The formation of electrical contacts on organic molecules preserving their integrity and using a scalable technique is a key step toward the fabrication of molecular electronic devices. Here we study the structural and electrical properties of metal- ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=906090

27. Rectangular Scale-Similar Etch Pits in Monocrystalline Diamond
Topic: Nanofabrication, Nanomanufacturing, and Nanoprocessing
Published: 9/15/2011
Authors: Craig Dyer McGray, Richard A Allen, Marc J Cangemi, Jon C Geist
Abstract: Etching of monocrystalline diamond in oxygen and water vapor at 1100° C through small pores in a silicon nitride film produced smooth-walled rectangular cavities. The cavities were imaged by electron microscope and measured by interferometric microsc ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908075

28. GaN Nanowires Grown by Molecular Beam Epitaxy
Topic: Nanofabrication, Nanomanufacturing, and Nanoprocessing
Published: 8/1/2011
Authors: Kristine A Bertness, Norman A Sanford, Albert Davydov
Abstract: The unique properties of GaN nanowires grown by molecular beam epitaxy are reviewed. These properties include the absence of residual strain, exclusion of most extended defects, long photoluminescence lifetime, low surface recombination velocity,and ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=909502

29. Lithography and Chemical Modeling of Acid Amplfiers for Use in EUV Photoresists
Topic: Nanofabrication, Nanomanufacturing, and Nanoprocessing
Published: 7/28/2011
Authors: Kirstin Kruger, craig higgins, Gregg M. Gallatin, Robert Brainard
Abstract: We postulate that the best way to simultaneously improve resolution, line edge roughness (LER), and sensitivity all in EUV resists is to increase the number of acid molecules generated per absorbed photon. In previous work, we showed that acid ampli ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908397

30. O2 A-band line parameters to support atmospheric remote sensing. Part II: The rare isotopologues
Topic: Nanofabrication, Nanomanufacturing, and Nanoprocessing
Published: 7/21/2011
Authors: Joseph Terence Hodges, David A Long, Daniel K Havey, S. S. Yu, M Okumura, Charles E Miller
Abstract: Frequency-stabilized cavity ring-down spectroscopy (FS-CRDS) was employed to measure over 100 transitions in the R-branch of the b1Σg+←X3Σg-(0,0) band for the rare O2 isotopologues. The use of 17O- and 18O-enriched mixtures allowed fo ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907932



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