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Topic Area: Nanofabrication, Nanomanufacturing, and Nanoprocessing
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Displaying records 11 to 20 of 96 records.
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11. Design, fabrication and characterization of a single-layer out-of-plane electrothermal actuator for SOI-MEMS Applications
Topic: Nanofabrication, Nanomanufacturing, and Nanoprocessing
Published: 5/3/2012
Authors: Yong Sik Kim, Nicholas G Dagalakis, Satyandra K. Gupta
Abstract: This paper presents the design, fabrication and characterization of a single-layer out-of-plane electrothermal actuator based on MEMS (Micro-Electro-Mechanical System). The proposed electrothermal actuator is designed to generate motions along the ou ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910830

12. Patterned Defect & CD Metrology by TSOM Beyond the 22 nm Node
Topic: Nanofabrication, Nanomanufacturing, and Nanoprocessing
Published: 4/10/2012
Authors: Ravikiran Attota, Abraham Arceo, Benjamin Bunday, Victor Vertanian
Abstract: Through-focus scanning optical microscopy (TSOM) is a novel method [1-8] that allows conventional optical microscopes to collect dimensional information down to the nanometer level by combining two-dimensional optical images captured at several throu ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910910

13. Residual Layer Thickness Control and Metrology in Jet and Flash Imprint Lithography
Topic: Nanofabrication, Nanomanufacturing, and Nanoprocessing
Published: 4/10/2012
Authors: Ravikiran Attota, Shrawan Singhal, Sreenivasan S.V.
Abstract: Jet-and-Flash Imprint Lithography (J-FIL) has demonstrated capability of high-resolution patterning at low costs. For accurate pattern transfer using J-FIL, it is imperative to have control of the residual layer thickness (RLT) of cured resist undern ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910872

14. On CD-AFM bias related to probe bending
Topic: Nanofabrication, Nanomanufacturing, and Nanoprocessing
Published: 4/9/2012
Authors: Vladimir A Ukraintsev, Ndubuisi George Orji, Theodore Vincent Vorburger, Ronald G Dixson, Joseph Fu, Richard M Silver
Abstract: Critical Dimension AFM (CD-AFM) is a widely used reference metrology. To characterize modern semiconductor devices, very small and flexible probes, often 15 nm to 20 nm in diameter, are now frequently used. Several recent publications have reported ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910903

15. Modeling the effects of acid amplifiers on photoresist stochastics
Topic: Nanofabrication, Nanomanufacturing, and Nanoprocessing
Published: 3/23/2012
Authors: Gregg M. Gallatin, Patrick Naulleau, Robert Brainard
Abstract: The tradeoff between Resolution, Line Edge Roughness (LER) and Sensitivity, the so called RLS tradeoff, continues to be a difficult challenge, especially for EUV lithography. Acid amplifiers have recently been proposed as a method to improve upon t ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910777

16. Nanomanufacturing with DNA Origami: Factors Affecting the Kinetics and Yield of Quantum Dot Binding
Topic: Nanofabrication, Nanomanufacturing, and Nanoprocessing
Published: 3/7/2012
Authors: Seung H. Ko, Gregg M. Gallatin, James Alexander Liddle
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907933

17. Nanometrology Using Through-Focus Scanning Optical Microscopy Method
Topic: Nanofabrication, Nanomanufacturing, and Nanoprocessing
Published: 12/21/2011
Authors: Ravikiran Attota, Richard M Silver
Abstract: We present an initial review of a novel through-focus scanning optical microscopy (TSOM) imaging method that produces nanometer dimensional measurement sensitivity using a conventional bright-field optical microscope. In the TSOM method a target is ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905395

18. Rectangular Scale-Similar Etch Pits in Monocrystalline Diamond
Topic: Nanofabrication, Nanomanufacturing, and Nanoprocessing
Published: 9/15/2011
Authors: Craig Dyer McGray, Richard A Allen, Marc J Cangemi, Jon C Geist
Abstract: Etching of monocrystalline diamond in oxygen and water vapor at 1100° C through small pores in a silicon nitride film produced smooth-walled rectangular cavities. The cavities were imaged by electron microscope and measured by interferometric microsc ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908075

19. GaN Nanowires Grown by Molecular Beam Epitaxy
Topic: Nanofabrication, Nanomanufacturing, and Nanoprocessing
Published: 8/1/2011
Authors: Kristine A Bertness, Norman A Sanford, Albert Davydov
Abstract: The unique properties of GaN nanowires grown by molecular beam epitaxy are reviewed. These properties include the absence of residual strain, exclusion of most extended defects, long photoluminescence lifetime, low surface recombination velocity,and ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=909502

20. Lithography and Chemical Modeling of Acid Amplfiers for Use in EUV Photoresists
Topic: Nanofabrication, Nanomanufacturing, and Nanoprocessing
Published: 7/28/2011
Authors: Kirstin Kruger, craig higgins, Gregg M. Gallatin, Robert Brainard
Abstract: We postulate that the best way to simultaneously improve resolution, line edge roughness (LER), and sensitivity all in EUV resists is to increase the number of acid molecules generated per absorbed photon. In previous work, we showed that acid ampli ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908397



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