NIST logo

Publications Portal

You searched on: Topic Area: Nanoelectronics and Nanoscale Electronics Sorted by: title

Displaying records 21 to 30 of 49 records.
Resort by: Date / Title


21. Frontiers of Characterization and Metrology for Nanoelectronics: 2011
Topic: Nanoelectronics and Nanoscale Electronics
Published: 12/28/2011
Authors: David G Seiler, Alain C. Diebold, Robert McDonald, Amal Chabli, Erik M Secula
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910545

22. Head and Media Challenges for 3 Tb/in^u2^ Microwave Assisted Magnetic Recording
Topic: Nanoelectronics and Nanoscale Electronics
Published: 2/3/2014
Authors: Thomas J Silva, Justin M Shaw, Hans Toya Nembach, Mike Mallary, Kumar Srinivasan, Gerado Bertero, Dan Wolf, Christian Kaiser, Michael Chaplin, Mahendra Pakala, Leng Qunwen, Yiming Wang, Carl Elliot, Lui Francis
Abstract: A specific design for Microwave Assisted Magnetic Recording (MAMR) at about 3Tb/in^u2^ (0.47 Tb/cm^u2^ or 4.7 Pb/m^u2^) is discussed in detail to highlight the challenges of MAMR and to contrast its requirements with conventional Perpendicular Magnet ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=914220

23. Inducing analytical orthogonality in tungsten oxide-based microsensors using materials structure and dynamic temperature control
Topic: Nanoelectronics and Nanoscale Electronics
Published: 1/4/2009
Authors: Kurt D Benkstein, Baranidharan Raman, David L. Lahr, John E Bonevich, Stephen Semancik
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=902372

24. Influence of Metal¿MoS2 Interface on MoS2 Transistor Performance: Comparison of Ag and Ti Contacts
Topic: Nanoelectronics and Nanoscale Electronics
Published: 12/16/2014
Authors: Hui H. Yuan, Guangjun Cheng, Lin You, Haitao Li, Hao Zhu, Wei Li, Joseph J Kopanski, Yaw S Obeng, Angela R Hight Walker, David J Gundlach, Curt A Richter, D. E Ioannou, Qiliang Li
Abstract: In this work, we present a study of enhancing MoS2 transistor performance by using proper metal contact. We found that the on-state current of MoS2 field-effect transistors with 30 nm Au/ 30 nm Ag contacts is enhanced more than 60 times and the subth ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=916101

25. Line Width Roughness and Cross Sectional Measurements of Sub-50 nm Structures with CD-SAXS and CD-SEM
Topic: Nanoelectronics and Nanoscale Electronics
Published: 3/24/2008
Authors: Chengqing C. Wang, Ronald Leland Jones, Kwang-Woo Choi, Christopher L Soles, Eric K Lin, Wen-Li Wu, James S Clarke, John S Villarrubia, Benjamin Bunday
Abstract: Critical dimension small angle x-ray scattering (CD-SAXS) is a measurement platform which is capable of measuring the average cross section and sidewall roughness in patterns ranging from (10 to 500) nm in pitch with sub nm precision. These capabili ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=853580

26. Metrology of Molecular Devices made by Flip Chip Lamination
Topic: Nanoelectronics and Nanoscale Electronics
Published: 4/30/2010
Authors: Christina Ann Hacker, Mariona Coll Bau, Curt A Richter
Abstract: Scaling of conventional electronics has continued unabated to dimensions approaching fundamental physical limits. As technology continues to evolve there are increasing demands to identify alternate routes of performing electrical functions. One po ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=904896

27. Modeling and metrology of metallic nanowires with application to microwave interconnects
Topic: Nanoelectronics and Nanoscale Electronics
Published: 5/23/2010
Authors: Kichul Kim, Thomas M Wallis, Paul Rice, Chin J. Chiang, Atif A. Imtiaz, Pavel Kabos, Jintao Zhang
Abstract: Abstract: Broadband characterization of individual metallic nanowires for microwave interconnect applications is discussed. Circuit and method of moments (MoM) modeling are benchmarked using a set of coplanar waveguide (CPW) test devices with microw ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=904615

28. Molecular devices made by Flip-chip lamination
Topic: Nanoelectronics and Nanoscale Electronics
Published: 3/21/2010
Authors: Christina Ann Hacker, Mariona Coll Bau, Curt A Richter
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907064

29. Nanoelectronic Fabrication with Flip Chip Lamination
Topic: Nanoelectronics and Nanoscale Electronics
Published: 12/15/2009
Authors: Mariona Coll Bau, Curt A Richter, Christina Ann Hacker
Abstract: Nanoelectronic fabrication with Flip chip lamination Mariona Coll, CA Richter, CA Hacker, Colloquium Catalan Institute of Nanoscience and Nanotechnology CIN2, Barcelona Spain, Dec 2009.
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907070

30. Near-Field Scanning Microwave Microscopy: An Emerging Research Tool for Nanoscale Metrology
Topic: Nanoelectronics and Nanoscale Electronics
Published: 1/1/2014
Authors: Atif A. Imtiaz, Thomas M Wallis, Pavel Kabos
Abstract: On 29 December 1959 at the annual meeting of the American Physical Society, Richard Feynman gave a lecture at the California Institute of Technology titled "There Is Plenty of Room at the Bottom: An Invitation to Enter a New Field of Physics." This m ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=914432



Search NIST-wide:


(Search abstract and keywords)


Last Name:
First Name:







Special Publications:

Looking for a NIST Special Publication (NIST SP Series)? Place the series number and dash in the report number field (Example: 800-) and begin your search.

  • SP 250-XX: Calibration Services
  • SP 260-XX: Standard Reference Materials
  • SP 300-XX: Precision Measurement and Calibration
  • SP 400-XX: Semiconductor Measurement Technology
  • SP 480-XX: Law Enforcement Technology
  • SP 500-XX: Computer Systems Technology
  • SP 700-XX: Industrial Measurement Series
  • SP 800-XX: Computer Security Series
  • SP 823-XX: Integrated Services Digital Network Series