NIST logo

Publications Portal

You searched on: Topic Area: Nanoelectronics and Nanoscale Electronics Sorted by: title

Displaying records 121 to 130 of 142 records.
Resort by: Date / Title


121. Survey Results Help Set International Nano-Electrotechnical Standardization Priorities
Topic: Nanoelectronics and Nanoscale Electronics
Published: 8/3/2009
Author: Herbert S Bennett
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=904057

122. Switching in Flexible Titanium Oxide Memristors
Topic: Nanoelectronics and Nanoscale Electronics
Published: 6/25/2010
Authors: Joseph Leo Tedesco, Nadine Emily Gergel-Hackett, Laurie A. Stephey, Christina Ann Hacker, Curt A Richter
Abstract: In this study, memristors were fabricated on flexible polyethylene terephthalate (PET) substrates with aluminum contacts and a titanium dioxide film formed with a sol-gel of titanium isopropoxide and ethanol. To study the electric field dependence of ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=906392

123. TaOx Memristive Devices with Ferromagnetic Electrodes
Topic: Nanoelectronics and Nanoscale Electronics
Published: 12/7/2011
Authors: Hyuk-Jae Jang, Pragya Rasmi Shrestha, Oleg A Kirillov, Helmut Baumgart, Kin P Cheung, Oana Jurchescu, Curt A Richter
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910359

124. Temperature dependence of adiabatic spin transfer torque and current polarization in Ni80Fe20 by spin wave Doppler measurements
Topic: Nanoelectronics and Nanoscale Electronics
Published: 4/23/2010
Authors: Meng Zhu, Cindi L Dennis, Robert D McMichael
Abstract: A spin wave Doppler technique is used to measure the temperature dependence of both the magnetization drift velocity and the current polarization in current-carrying Ni^d80^Fe^d20^ wires. For current densities of 10^u11^ A/m2, we obtain magnetizatio ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=904177

125. Temperature dependence of spin-torque-driven self-oscillators
Topic: Nanoelectronics and Nanoscale Electronics
Published: 10/15/2009
Authors: William H Rippard, Matthew R Pufall, Thomas Cecil, Thomas J Silva, Stephen E Russek, M. L. Schneider
Abstract: We have measured the temperature dependence of spin-torque-driven self-oscillations in point-contact nanooscillators for both in-plane and out-of-plane applied fields. We find that the linewidth for both field geometries is qualitatively similar. In ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=902997

126. The Challenge of Measuring Defects in Nanoscale Dielectrics
Topic: Nanoelectronics and Nanoscale Electronics
Published: 5/26/2008
Authors: Kin P Cheung, John S Suehle
Abstract: Defects in nanoscale gate dielectric of MOS devices can exchange charges with the substrate via quantum mechanical tunneling. This characteristic has been utilized in many measurement methods to measure the defects and its spatial distribution. In so ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32978

127. The Detection and Characterization of Ions, DNA and Proteins with Nanometer-Scale Pores
Topic: Nanoelectronics and Nanoscale Electronics
Published: 12/1/2007
Authors: John J Kasianowicz, Jeffrey C. Lerman, Sarah E Henrickson, Martin Misakian, Rekha Panchal, Kelly Halverson, Sina Bavari, Tam Nguyen, Rick Gussio, Devanand K. Shenoy, Vincent M Stanford
Abstract: Protein ion channels are nanometer-scale pores that are central to many biological processes, including the sensing of a wide variety of molecules. They have also demonstrated their potential for use in the sensitive and selective detection of ions, ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32377

128. The Integration of Molecular Electronic Devices with Traditional CMOS Technologies
Topic: Nanoelectronics and Nanoscale Electronics
Published: 8/28/2008
Authors: Nadine Emily Gergel-Hackett, Askia A Hill, Christina Ann Hacker, Curt A Richter
Abstract: This work describes the development of hybrid circuits composed of silicon-based molecular electronic devices and traditional CMOS technology. In the development of these circuits, we first fabricated individual CMOS-compatible molecular electronic ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=33021

129. The Next Generation of EDS: Microcalorimeter EDS with 3 eV Energy Resolution
Topic: Nanoelectronics and Nanoscale Electronics
Published: 7/1/1998
Authors: John M. Martinis, Kent D Irwin, David A Wollman, Gene C Hilton, L L Dulcie, Norman F Bergren
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=30793

130. Theory of Ballistic Electron Emission Microscopy Spectroscopy of NiSi^d2^/Si(111) Interfaces
Topic: Nanoelectronics and Nanoscale Electronics
Published: 1/1/1991
Authors: Mark D Stiles, D Hamann
Abstract: ^d^ We discuss theoretical calculations of ballistic-electron- emission-microscopy spectra based in part on a first-principles computation of the transmission across the interfaces. We propose a way of presenting experimental data that highlights the ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=620390



Search NIST-wide:


(Search abstract and keywords)


Last Name:
First Name:







Special Publications:

Looking for a NIST Special Publication (NIST SP Series)? Place the series number and dash in the report number field (Example: 800-) and begin your search.

  • SP 250-XX: Calibration Services
  • SP 260-XX: Standard Reference Materials
  • SP 300-XX: Precision Measurement and Calibration
  • SP 400-XX: Semiconductor Measurement Technology
  • SP 480-XX: Law Enforcement Technology
  • SP 500-XX: Computer Systems Technology
  • SP 700-XX: Industrial Measurement Series
  • SP 800-XX: Computer Security Series
  • SP 823-XX: Integrated Services Digital Network Series