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Topic Area: Nanoelectronics and Nanoscale Electronics
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Displaying records 121 to 130 of 137 records.
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121. Temperature dependence of spin-torque-driven self-oscillators
Topic: Nanoelectronics and Nanoscale Electronics
Published: 10/15/2009
Authors: William H Rippard, Matthew R Pufall, Thomas Cecil, Thomas J Silva, Stephen E Russek, M. L. Schneider
Abstract: We have measured the temperature dependence of spin-torque-driven self-oscillations in point-contact nanooscillators for both in-plane and out-of-plane applied fields. We find that the linewidth for both field geometries is qualitatively similar. In ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=902997

122. The Challenge of Measuring Defects in Nanoscale Dielectrics
Topic: Nanoelectronics and Nanoscale Electronics
Published: 5/26/2008
Authors: Kin P Cheung, John S Suehle
Abstract: Defects in nanoscale gate dielectric of MOS devices can exchange charges with the substrate via quantum mechanical tunneling. This characteristic has been utilized in many measurement methods to measure the defects and its spatial distribution. In so ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32978

123. The Detection and Characterization of Ions, DNA and Proteins with Nanometer-Scale Pores
Topic: Nanoelectronics and Nanoscale Electronics
Published: 12/1/2007
Authors: John J Kasianowicz, Jeffrey C. Lerman, Sarah E Henrickson, Martin Misakian, Rekha Panchal, Kelly Halverson, Sina Bavari, Tam Nguyen, Rick Gussio, Devanand K. Shenoy, Vincent M Stanford
Abstract: Protein ion channels are nanometer-scale pores that are central to many biological processes, including the sensing of a wide variety of molecules. They have also demonstrated their potential for use in the sensitive and selective detection of ions, ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32377

124. The Integration of Molecular Electronic Devices with Traditional CMOS Technologies
Topic: Nanoelectronics and Nanoscale Electronics
Published: 8/28/2008
Authors: Nadine Emily Gergel-Hackett, Askia A Hill, Christina Ann Hacker, Curt A Richter
Abstract: This work describes the development of hybrid circuits composed of silicon-based molecular electronic devices and traditional CMOS technology. In the development of these circuits, we first fabricated individual CMOS-compatible molecular electronic ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=33021

125. The Next Generation of EDS: Microcalorimeter EDS with 3 eV Energy Resolution
Topic: Nanoelectronics and Nanoscale Electronics
Published: 7/1/1998
Authors: John M. Martinis, Kent D Irwin, David A Wollman, Gene C Hilton, L L Dulcie, Norman F Bergren
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=30793

126. Theory of Ballistic Electron Emission Microscopy Spectroscopy of NiSi^d2^/Si(111) Interfaces
Topic: Nanoelectronics and Nanoscale Electronics
Published: 1/1/1991
Authors: Mark D Stiles, D Hamann
Abstract: ^d^ We discuss theoretical calculations of ballistic-electron- emission-microscopy spectra based in part on a first-principles computation of the transmission across the interfaces. We propose a way of presenting experimental data that highlights the ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=620390

127. Theory of Ballistic Electron Emission Spectroscopy of NiSi^d2^/Si(111) Interfaces
Topic: Nanoelectronics and Nanoscale Electronics
Published: 1/1/1992
Authors: Mark D Stiles, D Hamann
Abstract: ^d^ We discuss theoretical calculations of ballistic electron emission microscopy spectra for A- and B-type NiSi^d2^-Si(111) interfaces. The calculations are based on a first-principles computation of the transmission across the interfaces and a mode ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=620403

128. Theory of Photo-induced Resonant Tunneling in Heterojunctions
Topic: Nanoelectronics and Nanoscale Electronics
Published: 1/1/1992
Authors: S Apell, David R. Penn, Mark D Stiles
Abstract: The theoretical basis for understanding photo-assisted resonant tunneling is generally taken to be the theory by Tien and Gordon [Phys. Rev. 129, 647 (1963)] in which the effect of a photon field on an energy state is to create sidebands at multiple ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=620405

129. Three-dimensional simulation study of the improved on/off current ratio in silicon nanowire field-effect transistors
Topic: Nanoelectronics and Nanoscale Electronics
Published: 9/30/2008
Authors: Chang-Yong Choi, Won-Ju Cho, Sang-Mo Koo, John S Suehle, Curt A Richter, Qiliang Li, Eric Vogel
Abstract: In this paper, we report an approach based on three-dimensional numerical simulations for the investigation of the dependence of the on/off current ratio in silicon nanowire (SiNW) field-effect transistors (FETs) on the channel width. In order to inv ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32936

130. Topological Insulator Bi2Se3 Nanowire High Performance Field-Effect Transistors
Topic: Nanoelectronics and Nanoscale Electronics
Published: 4/30/2013
Authors: Hao Zhu, Curt A Richter, Erhai Zhao, John E Bonevich, William Andrew Kimes, Hyuk-Jae Jang, Hui Yuan, Abbas Arab, Oleg A Kirillov, James E Maslar, D. E Ioannou, Qiliang Li
Abstract: Topological insulators are unique electronic materials with insulating interiors but robust metallic surfaces. Device applications exploiting their remarkable properties, such as surface conduction of helical Dirac electrons, have so far been hampere ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912994



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