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Topic Area: Nanoelectronics and Nanoscale Electronics
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Displaying records 131 to 139.
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131. The Next Generation of EDS: Microcalorimeter EDS with 3 eV Energy Resolution
Topic: Nanoelectronics and Nanoscale Electronics
Published: 7/1/1998
Authors: John M. Martinis, Kent D Irwin, David A Wollman, Gene C Hilton, L L Dulcie, Norman F Bergren
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=30793

132. Measurements and Modeling of the Microwave Impedance in High-T^dc^ Grain-Boundary Josephson Junctions: Fluxon Generation and RF Josephson-Vortex Dynamics
Topic: Nanoelectronics and Nanoscale Electronics
Published: 6/1/1998
Authors: Y. M. Habib, C. J. Lehner, D. E. Oates, Leila R Vale, Ronald H. Ono, G. Dresselhaus, M. Dresselhaus
Abstract: Measurements and modeling of the microwave-frequency (rf) power dependence of the impedance in Y-Ba-Cu-O thin-film grain-boundary Josephson junctions (jj's) are presented. Microwave impedance measurements were performed using a stripline resonator wi ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=30834

133. DC SQUID Series Arrays with Intracoil Damping to Reduce Resonance Distortions
Topic: Nanoelectronics and Nanoscale Electronics
Published: 12/31/1997
Authors: Martin Huber, A. M. Corey, K. L. Lumpkins, F. N. Nafe, J. Rantschler, Gene C Hilton, John M. Martinis, A. H. Steinbach
Abstract: We report on low-noise DC SQUID series arrays incorporating intracoil damping, which show smooth DC characteristics. The voltage-flux characteristics of these devices are reproducible upon repeated cooling and do not require multiple heating/cooling ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31381

134. Coulomb Blockade of Andreev Reflection in the NSN Single Electron Transistor
Topic: Nanoelectronics and Nanoscale Electronics
Published: 2/1/1994
Authors: Travis M. Eiles, Michel H. Devoret, John M. Martinis
Abstract: We have measured at low temperatures the current through a submicrometer superconducting island connected to nornal metal leads by ultrasmall tunnel junctions. At low bias voltages, the current changes from being e-periodic in the applied gate change ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=30780

135. Theory of Ballistic Electron Emission Spectroscopy of NiSi^d2^/Si(111) Interfaces
Topic: Nanoelectronics and Nanoscale Electronics
Published: 1/1/1992
Authors: Mark D Stiles, D Hamann
Abstract: ^d^ We discuss theoretical calculations of ballistic electron emission microscopy spectra for A- and B-type NiSi^d2^-Si(111) interfaces. The calculations are based on a first-principles computation of the transmission across the interfaces and a mode ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=620403

136. Theory of Photo-induced Resonant Tunneling in Heterojunctions
Topic: Nanoelectronics and Nanoscale Electronics
Published: 1/1/1992
Authors: S Apell, David R. Penn, Mark D Stiles
Abstract: The theoretical basis for understanding photo-assisted resonant tunneling is generally taken to be the theory by Tien and Gordon [Phys. Rev. 129, 647 (1963)] in which the effect of a photon field on an energy state is to create sidebands at multiple ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=620405

137. Kinematic Theory of BEEM Spectroscopy of Silicon-Silicide Interfaces
Topic: Nanoelectronics and Nanoscale Electronics
Published: 1/1/1991
Authors: Mark D Stiles, D Hamann
Abstract: The electronic structure of the materials being measured has a strong effect on the spectroscopy of the interface between them measured by ballistic electron emission microscopy (BEEM). Specific calculations for CoSi^d2^/Si(111) and NiSi^d2^/Si(111) ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=620384

138. Theory of Ballistic Electron Emission Microscopy Spectroscopy of NiSi^d2^/Si(111) Interfaces
Topic: Nanoelectronics and Nanoscale Electronics
Published: 1/1/1991
Authors: Mark D Stiles, D Hamann
Abstract: ^d^ We discuss theoretical calculations of ballistic-electron- emission-microscopy spectra based in part on a first-principles computation of the transmission across the interfaces. We propose a way of presenting experimental data that highlights the ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=620390

139. Electron Transmission Through NiSi^d2^-Si Interfaces
Topic: Nanoelectronics and Nanoscale Electronics
Published: 1/1/1989
Authors: Mark D Stiles, D Hamann
Abstract: ^d^ Calculations of electron transmission through epitaxial NiSi^d2^/Si(111) interfaces illustrate the versatality of a newloy developed first-principles technique. The transmission is poor and very dependent on the interface structure; of the electr ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=620349



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