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Topic Area: Nanoelectronics and Nanoscale Electronics
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Displaying records 91 to 100 of 142 records.
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91. Noise in ZnO Nanowire Field Effect Transistors
Topic: Nanoelectronics and Nanoscale Electronics
Published: 2/5/2009
Authors: Hao Xiong, Wenyong Wang, John S Suehle, Curt A Richter, W. Hong, T. Lee
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=904093

92. GaN nanowire carrier concentration calculated from light and dark resistance measurements
Topic: Nanoelectronics and Nanoscale Electronics
Published: 1/30/2009
Authors: Lorelle Mansfield, Kristine A Bertness, Paul Timothy Blanchard, Todd E Harvey, Aric Warner Sanders, Norman A Sanford
Abstract: We obtained limits on the carrier concentration and mobility of silicon-doped gallium nitride nanowires at room temperature with light and dark resistance data. Current-voltage measurements were performed on single-nanowire devices in the dark and un ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=33145

93. Inducing analytical orthogonality in tungsten oxide-based microsensors using materials structure and dynamic temperature control
Topic: Nanoelectronics and Nanoscale Electronics
Published: 1/4/2009
Authors: Kurt D Benkstein, Baranidharan Raman, David L. Lahr, John E Bonevich, Stephen Semancik
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=902372

94. Surface Potential Imaging of Solution Processable Acene-Based Thin Film Transistors
Topic: Nanoelectronics and Nanoscale Electronics
Published: 12/2/2008
Authors: Lucile C. Teague, Behrang H Hamadani, John E Anthony, David J Gundlach, James G. Kushmerick, Sanker Subramanian, Thomas Jackson, Curt A Richter, Oana Jurchescu
Abstract: We report scanning Kelvin probe microscopy (SKPM) of electrically biased difluoro bis(triethylsilylethynyl) anthradithiophene (diF-TESADT) organic thin film transistors. SKPM reveals the relationship between the diF-TESADT film structure and device ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=831446

95. Electrical Manipulation of Gold Nanoparticles for Microfluidic Applications
Topic: Nanoelectronics and Nanoscale Electronics
Published: 10/16/2008
Authors: Darwin R Reyes-Hernandez, Geraldine I. Mijares, Kimberly A Briggman, Jon C Geist, Michael Gaitan
Abstract: An electrical method to trap and release gold nanoparticles to and from the surface of alkanethiol-modified gold electrodes is presented. When a positive bias versus a Ag/AgCl reference electrode was applied to gold electrodes, negatively-charged go ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=33077

96. Three-dimensional simulation study of the improved on/off current ratio in silicon nanowire field-effect transistors
Topic: Nanoelectronics and Nanoscale Electronics
Published: 9/30/2008
Authors: Chang-Yong Choi, Won-Ju Cho, Sang-Mo Koo, John S Suehle, Curt A Richter, Qiliang Li, Eric Vogel
Abstract: In this paper, we report an approach based on three-dimensional numerical simulations for the investigation of the dependence of the on/off current ratio in silicon nanowire (SiNW) field-effect transistors (FETs) on the channel width. In order to inv ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32936

97. The Integration of Molecular Electronic Devices with Traditional CMOS Technologies
Topic: Nanoelectronics and Nanoscale Electronics
Published: 8/28/2008
Authors: Nadine Emily Gergel-Hackett, Askia A Hill, Christina Ann Hacker, Curt A Richter
Abstract: This work describes the development of hybrid circuits composed of silicon-based molecular electronic devices and traditional CMOS technology. In the development of these circuits, we first fabricated individual CMOS-compatible molecular electronic ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=33021

98. Molecule induced interface states dominate charge transport in Si-alkyl-metal junctions
Topic: Nanoelectronics and Nanoscale Electronics
Published: 8/26/2008
Authors: Lam H. Yu, Nadine Emily Gergel-Hackett, Christopher D Zangmeister, Christina Ann Hacker, Curt A Richter, James G. Kushmerick
Abstract: Abstract. Semiconductor-molecule-metal junctions consisting of alkanethiol mono- layers self-assembled on both p+ and n¡ type highly doped Si(111)wires contacted with a 10 ¹m Au wire in a crossed-wire geometry are examined. Low temperature transpo ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=832205

99. Design, Fabrication, and Characterization of High-Performance Silicon Nanowire Transistors
Topic: Nanoelectronics and Nanoscale Electronics
Published: 8/1/2008
Authors: Qiliang Li, Xiaoxiao Zhu, Yang Yang, D. E Ioannou, Hao Xiong, John S Suehle, Curt A Richter
Abstract: We report the fabrication and characterization of double-gated Si nanowire field effect transistors with excellent current-voltage characteristics, low subthreshold slope ~ 85 mV/dec and high on/off current ratio ~ 10^6. The Si nanowire devices a ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=33199

100. Non-planar nanofluidic devices for single molecule analysis fabricated using nanoglassblowing
Topic: Nanoelectronics and Nanoscale Electronics
Published: 6/17/2008
Authors: Elizabeth Strychalski, Samuel M Stavis, Harold G Craighead
Abstract: A method termed 'nanoglassblowing' is presented for fabricating integrated microfluidic and nanofluidic devices with gradual depth changes and wide, shallow nanochannels.  This method was used to construct fused silica channels with out-of-plane ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32985



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