NIST logo

Publications Portal

You searched on:
Topic Area: Nanoelectronics and Nanoscale Electronics
Sorted by: date

Displaying records 91 to 100 of 135 records.
Resort by: Date / Title


91. Molecule induced interface states dominate charge transport in Si-alkyl-metal junctions
Topic: Nanoelectronics and Nanoscale Electronics
Published: 8/26/2008
Authors: Lam H. Yu, Nadine Emily Gergel-Hackett, Christopher D Zangmeister, Christina Ann Hacker, Curt A Richter, James G. Kushmerick
Abstract: Abstract. Semiconductor-molecule-metal junctions consisting of alkanethiol mono- layers self-assembled on both p+ and n¡ type highly doped Si(111)wires contacted with a 10 ¹m Au wire in a crossed-wire geometry are examined. Low temperature transpo ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=832205

92. Design, Fabrication, and Characterization of High-Performance Silicon Nanowire Transistors
Topic: Nanoelectronics and Nanoscale Electronics
Published: 8/1/2008
Authors: Qiliang Li, Xiaoxiao Zhu, Yang Yang, D. E Ioannou, Hao Xiong, John S Suehle, Curt A Richter
Abstract: We report the fabrication and characterization of double-gated Si nanowire field effect transistors with excellent current-voltage characteristics, low subthreshold slope ~ 85 mV/dec and high on/off current ratio ~ 10^6. The Si nanowire devices a ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=33199

93. Non-planar nanofluidic devices for single molecule analysis fabricated using nanoglassblowing
Topic: Nanoelectronics and Nanoscale Electronics
Published: 6/17/2008
Authors: Elizabeth Strychalski, Samuel M Stavis, Harold G Craighead
Abstract: A method termed 'nanoglassblowing' is presented for fabricating integrated microfluidic and nanofluidic devices with gradual depth changes and wide, shallow nanochannels.  This method was used to construct fused silica channels with out-of-plane ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32985

94. Modeling Ion Transport in Tethered Bilayer Lipid Membranes. 1. Passive Ion Permeation
Topic: Nanoelectronics and Nanoscale Electronics
Published: 6/10/2008
Authors: Joseph William Robertson, Marcel G Friedrich, Kibrom Asmormom, Wolfgang Knoll, Dieter Walz, Renate L Naumann
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=33069

95. Controlled Encapsulation of a Hydrophilic Drug Simulant in Nano-Liposomes Using Continuous Flow Microfluidics
Topic: Nanoelectronics and Nanoscale Electronics
Published: 6/4/2008
Authors: Andreas Jahn, Joseph Earl Reiner, Wyatt N Vreeland, Don DeVoe, Laurie E Locascio, Michael Gaitan
Abstract: A new method to tailor the size and size distribution of nanometer scale liposomes and control loading of liposomes with a model drug in a continuous-flow microfluidic design is presented. Size and size dispersion are determined with tandem Asymmetr ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32987

96. Stable Insulating Tethered Bilayer Lipid Membranes
Topic: Nanoelectronics and Nanoscale Electronics
Published: 6/2/2008
Authors: Inga K. Vockenroth, Christian Ohm, Joseph William Robertson, Duncan J. McGillivray, Mahias Losche, Ingo Koper
Abstract: Tethered bilayer lipid membranes have been shown to be an excellent model system for biological membranes. Coupling of a membrane to a solid supports creates a stable system that is accessible for various surface analytical tools. Good electrical s ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=33218

97. The Challenge of Measuring Defects in Nanoscale Dielectrics
Topic: Nanoelectronics and Nanoscale Electronics
Published: 5/26/2008
Authors: Kin P Cheung, John S Suehle
Abstract: Defects in nanoscale gate dielectric of MOS devices can exchange charges with the substrate via quantum mechanical tunneling. This characteristic has been utilized in many measurement methods to measure the defects and its spatial distribution. In so ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32978

98. Measurements for the Reliability and Electrical Characterization of Semiconductor Nanowires
Topic: Nanoelectronics and Nanoscale Electronics
Published: 4/30/2008
Authors: Curt A Richter, Hao Xiong, Xiaoxiao Zhu, Wenyong Wang, Vincent M Stanford, Qiliang Li, D. E Ioannou, Woong-Ki Hong, Takhee Lee
Abstract: Nanoelectronic devices based upon self-assembled semiconductor nanowires are excellent research tools for investigating the behavior of structures with sub-lithographic features as well as a promising basis for future information processing technolog ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32971

99. Correlation Between Microstructure, Electronic Properties and Ficker Noise in Organic Thin Film Transistors
Topic: Nanoelectronics and Nanoscale Electronics
Published: 3/31/2008
Authors: Oana Jurchescu, Behrang H Hamadani, Hao Xiong, Sungkyu Park, Sankar Subramanian, Neil M Zimmerman, John E Anthony, Thomas Jackson, David J Gundlach
Abstract: We report on observations of a direct correlation between the microstructure of the organic thin films and their electronic properties when incorporated in field-effect transistors. We present a simple method to induce enhanced grain growth in soluti ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32777

100. Line Width Roughness and Cross Sectional Measurements of Sub-50 nm Structures with CD-SAXS and CD-SEM
Topic: Nanoelectronics and Nanoscale Electronics
Published: 3/24/2008
Authors: Chengqing C. Wang, Ronald Leland Jones, Kwang-Woo Choi, Christopher L Soles, Eric K Lin, Wen-Li Wu, James S Clarke, John S Villarrubia, Benjamin Bunday
Abstract: Critical dimension small angle x-ray scattering (CD-SAXS) is a measurement platform which is capable of measuring the average cross section and sidewall roughness in patterns ranging from (10 to 500) nm in pitch with sub nm precision. These capabili ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=853580



Search NIST-wide:


(Search abstract and keywords)


Last Name:
First Name:







Special Publications:

Looking for a NIST Special Publication (NIST SP Series)? Place the series number and dash in the report number field (Example: 800-) and begin your search.

  • SP 250-XX: Calibration Services
  • SP 260-XX: Standard Reference Materials
  • SP 300-XX: Precision Measurement and Calibration
  • SP 400-XX: Semiconductor Measurement Technology
  • SP 480-XX: Law Enforcement Technology
  • SP 500-XX: Computer Systems Technology
  • SP 700-XX: Industrial Measurement Series
  • SP 800-XX: Computer Security Series
  • SP 823-XX: Integrated Services Digital Network Series