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Topic Area: Nanoelectronics and Nanoscale Electronics
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Displaying records 91 to 100 of 139 records.
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91. Surface Potential Imaging of Solution Processable Acene-Based Thin Film Transistors
Topic: Nanoelectronics and Nanoscale Electronics
Published: 12/2/2008
Authors: Lucile C. Teague, Behrang H Hamadani, John E Anthony, David J Gundlach, James G. Kushmerick, Sanker Subramanian, Thomas Jackson, Curt A Richter, Oana Jurchescu
Abstract: We report scanning Kelvin probe microscopy (SKPM) of electrically biased difluoro bis(triethylsilylethynyl) anthradithiophene (diF-TESADT) organic thin film transistors. SKPM reveals the relationship between the diF-TESADT film structure and device ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=831446

92. Electrical Manipulation of Gold Nanoparticles for Microfluidic Applications
Topic: Nanoelectronics and Nanoscale Electronics
Published: 10/16/2008
Authors: Darwin R Reyes-Hernandez, Geraldine I. Mijares, Kimberly A Briggman, Jon C Geist, Michael Gaitan
Abstract: An electrical method to trap and release gold nanoparticles to and from the surface of alkanethiol-modified gold electrodes is presented. When a positive bias versus a Ag/AgCl reference electrode was applied to gold electrodes, negatively-charged go ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=33077

93. Three-dimensional simulation study of the improved on/off current ratio in silicon nanowire field-effect transistors
Topic: Nanoelectronics and Nanoscale Electronics
Published: 9/30/2008
Authors: Chang-Yong Choi, Won-Ju Cho, Sang-Mo Koo, John S Suehle, Curt A Richter, Qiliang Li, Eric Vogel
Abstract: In this paper, we report an approach based on three-dimensional numerical simulations for the investigation of the dependence of the on/off current ratio in silicon nanowire (SiNW) field-effect transistors (FETs) on the channel width. In order to inv ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32936

94. The Integration of Molecular Electronic Devices with Traditional CMOS Technologies
Topic: Nanoelectronics and Nanoscale Electronics
Published: 8/28/2008
Authors: Nadine Emily Gergel-Hackett, Askia A Hill, Christina Ann Hacker, Curt A Richter
Abstract: This work describes the development of hybrid circuits composed of silicon-based molecular electronic devices and traditional CMOS technology. In the development of these circuits, we first fabricated individual CMOS-compatible molecular electronic ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=33021

95. Molecule induced interface states dominate charge transport in Si-alkyl-metal junctions
Topic: Nanoelectronics and Nanoscale Electronics
Published: 8/26/2008
Authors: Lam H. Yu, Nadine Emily Gergel-Hackett, Christopher D Zangmeister, Christina Ann Hacker, Curt A Richter, James G. Kushmerick
Abstract: Abstract. Semiconductor-molecule-metal junctions consisting of alkanethiol mono- layers self-assembled on both p+ and n¡ type highly doped Si(111)wires contacted with a 10 ¹m Au wire in a crossed-wire geometry are examined. Low temperature transpo ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=832205

96. Design, Fabrication, and Characterization of High-Performance Silicon Nanowire Transistors
Topic: Nanoelectronics and Nanoscale Electronics
Published: 8/1/2008
Authors: Qiliang Li, Xiaoxiao Zhu, Yang Yang, D. E Ioannou, Hao Xiong, John S Suehle, Curt A Richter
Abstract: We report the fabrication and characterization of double-gated Si nanowire field effect transistors with excellent current-voltage characteristics, low subthreshold slope ~ 85 mV/dec and high on/off current ratio ~ 10^6. The Si nanowire devices a ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=33199

97. Non-planar nanofluidic devices for single molecule analysis fabricated using nanoglassblowing
Topic: Nanoelectronics and Nanoscale Electronics
Published: 6/17/2008
Authors: Elizabeth Strychalski, Samuel M Stavis, Harold G Craighead
Abstract: A method termed 'nanoglassblowing' is presented for fabricating integrated microfluidic and nanofluidic devices with gradual depth changes and wide, shallow nanochannels.  This method was used to construct fused silica channels with out-of-plane ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32985

98. Modeling Ion Transport in Tethered Bilayer Lipid Membranes. 1. Passive Ion Permeation
Topic: Nanoelectronics and Nanoscale Electronics
Published: 6/10/2008
Authors: Joseph William Robertson, Marcel G Friedrich, Kibrom Asmormom, Wolfgang Knoll, Dieter Walz, Renate L Naumann
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=33069

99. Controlled Encapsulation of a Hydrophilic Drug Simulant in Nano-Liposomes Using Continuous Flow Microfluidics
Topic: Nanoelectronics and Nanoscale Electronics
Published: 6/4/2008
Authors: Andreas Jahn, Joseph E. (Joseph E.) Reiner, Wyatt N Vreeland, Don DeVoe, Laurie E Locascio, Michael Gaitan
Abstract: A new method to tailor the size and size distribution of nanometer scale liposomes and control loading of liposomes with a model drug in a continuous-flow microfluidic design is presented. Size and size dispersion are determined with tandem Asymmetr ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32987

100. Stable Insulating Tethered Bilayer Lipid Membranes
Topic: Nanoelectronics and Nanoscale Electronics
Published: 6/2/2008
Authors: Inga K. Vockenroth, Christian Ohm, Joseph William Robertson, Duncan J. McGillivray, Mahias Losche, Ingo Koper
Abstract: Tethered bilayer lipid membranes have been shown to be an excellent model system for biological membranes. Coupling of a membrane to a solid supports creates a stable system that is accessible for various surface analytical tools. Good electrical s ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=33218



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