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1. Self-Assembled Monolayers Impact Cobalt Interfacial Structure in Nanoelectronic Junctions
Topic: Nanoelectronics and Nanoscale Electronics
Published: 3/5/2015
Authors: Sujitra Jeanie Pookpanratana, Leigh Lydecker, Curt A Richter, Christina Ann Hacker
Abstract: The formation of molecular monolayers on template-stripped cobalt surfaces is reported. The quality of the alkane-based molecular structure was confirmed through spectroscopic measurements. We find that the self-assembly of bifunctional molecules has ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=914804

2. Influence of Metal¿MoS2 Interface on MoS2 Transistor Performance: Comparison of Ag and Ti Contacts
Topic: Nanoelectronics and Nanoscale Electronics
Published: 12/16/2014
Authors: Hui H. Yuan, Guangjun Cheng, Lin You, Haitao Li, Hao Zhu, wei li, Joseph J Kopanski, Yaw S Obeng, Angela R Hight Walker, David J Gundlach, Curt A Richter, D. E Ioannou, Qiliang Li
Abstract: In this work, we present a study of enhancing MoS2 transistor performance by using proper metal contact. We found that the on-state current of MoS2 field-effect transistors with 30 nm Au/ 30 nm Ag contacts is enhanced more than 60 times and the subth ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=916101

3. Reliability of Low Temperature Grown Multi-Wall Carbon Nanotube Bundles Integrated as Vias in Monolithic Three-Dimensional Integrated Circuits
Topic: Nanoelectronics and Nanoscale Electronics
Published: 8/26/2014
Authors: Ann Chiaramonti Chiaramonti Debay, Sten Vollebregt, Aric Warner Sanders, Alexandra E Curtin, R. Ishihara, David Thomas Read
Abstract: In this extended abstract we present our recent results on the reliability testing of multi-wall carbon nanotube vertical interconnects (vias).
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=915382

4. Dominant Thermal Boundary Resistance in Multi-Walled Carbon Nanotube Bundles Fabricated at Low Temperatures
Topic: Nanoelectronics and Nanoscale Electronics
Published: 7/11/2014
Authors: Ann Chiaramonti Chiaramonti Debay, Sten Vollebregt, Sarbajit Banerjee, Kees Beenakker, R. Ishihara
Abstract: While carbon nanotubes (CNT) have been suggested as thermal management mate- rial for integrated circuits, the thermal properties and especially the thermal bound- ary resistance (TBR) of as-grown CNT have hardly been investigated. Here the therma ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=915307

5. Establishing an upper bound on contact resistivity of ohmic contacts to n-GaN nanowires
Topic: Nanoelectronics and Nanoscale Electronics
Published: 4/1/2014
Authors: Paul Timothy Blanchard, Kristine A Bertness, Todd E Harvey, Norman A Sanford
Abstract: Contact resistivity {rho}^dc^ is an important figure of merit in evaluating and improving the performance of electronic and optoelectronic devices. Due to the small size, unique morphology, and uncertain transport properties of semiconductor nano ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=914876

6. Head and Media Challenges for 3 Tb/in^u2^ Microwave Assisted Magnetic Recording
Topic: Nanoelectronics and Nanoscale Electronics
Published: 2/3/2014
Authors: Thomas J Silva, Justin M Shaw, Hans Toya Nembach, Mike Mallary, Kumar Srinivasan, Gerado Bertero, Dan Wolf, Christian Kaiser, Michael Chaplin, Mahendra Pakala, Leng Qunwen, Yiming Wang, Carl Elliot, Lui Francis
Abstract: A specific design for Microwave Assisted Magnetic Recording (MAMR) at about 3Tb/in^u2^ (0.47 Tb/cm^u2^ or 4.7 Pb/m^u2^) is discussed in detail to highlight the challenges of MAMR and to contrast its requirements with conventional Perpendicular Magnet ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=914220

7. Spin transport in memristive devices
Topic: Nanoelectronics and Nanoscale Electronics
Published: 1/26/2012
Authors: Hyuk-Jae Jang, Oleg A Kirillov, Oana Jurchescu, Curt A Richter
Abstract: We report on electron spin transport through electrochemically precipitated copper filaments formed in TaOX memristive devices consisting of Co(60nm)/TaOX(16nm)/Cu(5nm)/Py(60nm) with crossbar-type electrode geometry.The devices show memristive behavi ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910149

8. Frontiers of Characterization and Metrology for Nanoelectronics: 2011
Topic: Nanoelectronics and Nanoscale Electronics
Published: 12/28/2011
Authors: David G Seiler, Alain C. Diebold, Robert McDonald, Amal Chabli, Erik M Secula
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910545

9. TaOx Memristive Devices with Ferromagnetic Electrodes
Topic: Nanoelectronics and Nanoscale Electronics
Published: 12/7/2011
Authors: Hyuk-Jae Jang, Pragya Rasmi Shrestha, Oleg A Kirillov, Helmut Baumgart, Kin P Cheung, Oana Jurchescu, Curt A Richter
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910359

10. Structural and electrical properties of Flip Chip Laminated metal-molecule-silicon structures modifying molecular backbone and atomic tether
Topic: Nanoelectronics and Nanoscale Electronics
Published: 10/19/2011
Authors: Mariona Coll Bau, Nadine Emily Gergel-Hackett, Curt A Richter, Christina Ann Hacker
Abstract: The formation of electrical contacts on organic molecules preserving their integrity and using a scalable technique is a key step toward the fabrication of molecular electronic devices. Here we study the structural and electrical properties of metal- ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=906090



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