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Topic Area: Nanoelectronics and Nanoscale Electronics
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Displaying records 1 to 10 of 139 records.
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1. Establishing an upper bound on contact resistivity of ohmic contacts to n-GaN nanowires
Topic: Nanoelectronics and Nanoscale Electronics
Published: 4/1/2014
Authors: Paul Timothy Blanchard, Kristine A Bertness, Todd E Harvey, Norman A Sanford
Abstract: Contact resistivity {rho}^dc^ is an important figure of merit in evaluating and improving the performance of electronic and optoelectronic devices. Due to the small size, unique morphology, and uncertain transport properties of semiconductor nano ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=914876

2. DESIGN OF TEST STRUCTURE FOR 3D-STACKED INTEGRATED CIRCUITS (3D-SICS) METROLOGY
Topic: Nanoelectronics and Nanoscale Electronics
Published: 3/25/2014
Authors: Lin You, Jungjoon Ahn, Joseph J Kopanski
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=914744

3. Highly reproducible and reliable metal/graphene contact by UV-Ozone treatment
Topic: Nanoelectronics and Nanoscale Electronics
Published: 3/17/2014
Authors: Wei Li, Christina Ann Hacker, Guangjun Cheng, Angela R Hight Walker, Curt A Richter, David J Gundlach, Yiran Liang, boyuan Tian, Xuelei Liang, Lianmao Peng
Abstract: Resist residue from the device fabrication process is a significant source of contamination at the metal/graphene contact interface. Ultraviolet Ozone (UVO) treatment is proven here, by X-ray photoelectron spectroscopy (XPS) and Raman measurement ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=915002

4. Effect of wire configuration and point defects on the conductance of gold nano-conductors
Topic: Nanoelectronics and Nanoscale Electronics
Published: 2/28/2014
Authors: Shmuel Barzilai, Francesca M Tavazza, Lyle E Levine
Abstract: Gold nanowire (NW) chains are considered a good candidate for nanoelectronics devices because they exhibit remarkable structural and electrical properties. One promising nano-conductor candidate is called ,Hexa1Š. This NW configuration was found to ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913936

5. Head and Media Challenges for 3 Tb/in^u2^ Microwave Assisted Magnetic Recording
Topic: Nanoelectronics and Nanoscale Electronics
Published: 2/3/2014
Authors: Thomas J Silva, Justin M Shaw, Hans T. Nembach, Mike Mallary, Kumar Srinivasan, Gerado Bertero, Dan Wolf, Christian Kaiser, Michael Chaplin, Mahendra Pakala, Leng Qunwen, Yiming Wang, Carl Elliot, Lui Francis
Abstract: A specific design for Microwave Assisted Magnetic Recording (MAMR) at about 3Tb/in^u2^ (0.47 Tb/cm^u2^ or 4.7 Pb/m^u2^) is discussed in detail to highlight the challenges of MAMR and to contrast its requirements with conventional Perpendicular Magnet ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=914220

6. Resonant Microwave Absorption in Thermally Deposited Au Nanoparticle Films Near Percolation Coverage
Topic: Nanoelectronics and Nanoscale Electronics
Published: 6/19/2013
Authors: Jan Obrzut, Jack F Douglas, Oleg A Kirillov, Fred Sharifi, James Alexander Liddle
Abstract: We observe a resonant transition in microwave absorption in thin thermally deposited Au nanoparticle films near the geometrical percolation transition pc where the films exhibit a ,fractal‰ heterogeneous geometry. The absorption of incident microwa ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912786

7. Sensitivity of gold nano conductors to common contaminations ‹ ab initio results
Topic: Nanoelectronics and Nanoscale Electronics
Published: 5/29/2013
Authors: Shmuel Barzilai, Francesca M Tavazza, Lyle E Levine
Abstract: Gold nanowire chains are considered a good candidate for nanoelectronic devices because they exhibit remarkable structural and electrical properties. A previous study shows that the beryllium terminated BeO (0001) surface may be a useful platform for ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913345

8. Topological Insulator Bi2Se3 Nanowire High Performance Field-Effect Transistors
Topic: Nanoelectronics and Nanoscale Electronics
Published: 4/30/2013
Authors: Hao Zhu, Curt A Richter, Erhai Zhao, John E Bonevich, William Andrew Kimes, Hyuk-Jae Jang, Hui Yuan, Abbas Arab, Oleg A Kirillov, James E Maslar, D. E Ioannou, Qiliang Li
Abstract: Topological insulators are unique electronic materials with insulating interiors but robust metallic surfaces. Device applications exploiting their remarkable properties, such as surface conduction of helical Dirac electrons, have so far been hampere ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912994

9. Modeling Scanning Electron Microscope Measurements with Charging
Topic: Nanoelectronics and Nanoscale Electronics
Published: 4/3/2013
Author: John S Villarrubia
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912857

10. ELECTRICAL AND PHYSICAL CHARACTERIZATION OF BILAYER CARBOXYLIC ACID FUNCTIONALIZED MOLECULAR LAYERS
Topic: Nanoelectronics and Nanoscale Electronics
Published: 1/30/2013
Authors: Sujitra Jeanie Pookpanratana, Joseph William Robertson, Cherno Jaye, Daniel A Fischer, Curt A Richter, Christina Ann Hacker
Abstract: We have used Flip Chip Lamination (FCL) to form monolayer and bilayer molecular junctions of carboxylic acid-containing molecules with Cu atom incorporation. Carboxylic acid-terminated monolayers are self-assembled onto ultrasmooth Au using thiol che ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912203



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