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Topic Area: Nanoelectronics and Nanoscale Electronics

Displaying records 81 to 90 of 136 records.
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81. Nanoscale Contacts Form the Bridge for Nano-Electrotechnical Businesses
Topic: Nanoelectronics and Nanoscale Electronics
Published: 8/3/2009
Author: Herbert S Bennett
Abstract: The purpose of this paper is to suggest a possible framework for nanoscale contacts that the stakeholders in nano-electrotechnologies may follow to establish international standards with the goal of accelerating innovation in nano-electrotechnologies ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=902771

82. Survey Results Help Set International Nano-Electrotechnical Standardization Priorities
Topic: Nanoelectronics and Nanoscale Electronics
Published: 8/3/2009
Author: Herbert S Bennett
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=904057

83. International Survey on Priorities for Nano-Electrotechnologies Standards
Topic: Nanoelectronics and Nanoscale Electronics
Published: 7/1/2009
Author: Herbert S Bennett
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=904059

84. Uncertainty Analysis for Noise-Parameter Measurements at NIST
Topic: Nanoelectronics and Nanoscale Electronics
Published: 4/9/2009
Author: James Paul Randa
Abstract: The uncertainty analysis is presented for NIST measurements of noise parameters of amplifiers and transistors, in both connectorized (coaxial) and on-wafer environments. We treat both the X-parameters, which are based on the wave representation of t ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=33026

85. Noise in ZnO Nanowire Field Effect Transistors
Topic: Nanoelectronics and Nanoscale Electronics
Published: 2/5/2009
Authors: Hao Xiong, Wenyong Wang, John S Suehle, Curt A Richter, W. Hong, T. Lee
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=904093

86. GaN nanowire carrier concentration calculated from light and dark resistance measurements
Topic: Nanoelectronics and Nanoscale Electronics
Published: 1/30/2009
Authors: Lorelle Mansfield, Kristine A Bertness, Paul Timothy Blanchard, Todd E Harvey, Aric Warner Sanders, Norman A Sanford
Abstract: We obtained limits on the carrier concentration and mobility of silicon-doped gallium nitride nanowires at room temperature with light and dark resistance data. Current-voltage measurements were performed on single-nanowire devices in the dark and un ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=33145

87. Inducing analytical orthogonality in tungsten oxide-based microsensors using materials structure and dynamic temperature control
Topic: Nanoelectronics and Nanoscale Electronics
Published: 1/4/2009
Authors: Kurt D Benkstein, Baranidharan Raman, David L. Lahr, John E Bonevich, Stephen Semancik
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=902372

88. Surface Potential Imaging of Solution Processable Acene-Based Thin Film Transistors
Topic: Nanoelectronics and Nanoscale Electronics
Published: 12/2/2008
Authors: Lucile C. Teague, Behrang H Hamadani, John E Anthony, David J Gundlach, James G. Kushmerick, Sanker Subramanian, Thomas Jackson, Curt A Richter, Oana Jurchescu
Abstract: We report scanning Kelvin probe microscopy (SKPM) of electrically biased difluoro bis(triethylsilylethynyl) anthradithiophene (diF-TESADT) organic thin film transistors. SKPM reveals the relationship between the diF-TESADT film structure and device ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=831446

89. Electrical Manipulation of Gold Nanoparticles for Microfluidic Applications
Topic: Nanoelectronics and Nanoscale Electronics
Published: 10/16/2008
Authors: Darwin R Reyes-Hernandez, Geraldine I. Mijares, Kimberly A Briggman, Jon C Geist, Michael Gaitan
Abstract: An electrical method to trap and release gold nanoparticles to and from the surface of alkanethiol-modified gold electrodes is presented. When a positive bias versus a Ag/AgCl reference electrode was applied to gold electrodes, negatively-charged go ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=33077

90. Three-dimensional simulation study of the improved on/off current ratio in silicon nanowire field-effect transistors
Topic: Nanoelectronics and Nanoscale Electronics
Published: 9/30/2008
Authors: Chang-Yong Choi, Won-Ju Cho, Sang-Mo Koo, John S Suehle, Curt A Richter, Qiliang Li, Eric Vogel
Abstract: In this paper, we report an approach based on three-dimensional numerical simulations for the investigation of the dependence of the on/off current ratio in silicon nanowire (SiNW) field-effect transistors (FETs) on the channel width. In order to inv ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32936



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