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You searched on: Topic Area: Nanoelectronics and Nanoscale Electronics

Displaying records 31 to 40 of 142 records.
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31. Fabrication and characterization of silicon-based molecular electronic devices
Topic: Nanoelectronics and Nanoscale Electronics
Published: 5/21/2011
Authors: Christina Ann Hacker, Michael A Walsh, Sujitra Jeanie Pookpanratana, Mariona Coll Bau, Curt A Richter
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908433

32. Electrical Reliability Testing of Single-Walled Carbon Nanotube Networks
Topic: Nanoelectronics and Nanoscale Electronics
Published: 5/18/2011
Authors: Mark C Strus, Ann Chiaramonti Chiaramonti Debay, Robert R Keller, Yung Joon Jung, Younglae Kim
Abstract: We present test methods to investigate the electrical reliability of nanoscale lines of highly-aligned, networked, metallic/semiconducting single-walled carbon nanotubes (SWCNTs) fabricated through a template-based fluidic assembly process. We find ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907014

33. Fabrication, Characterization and Simulation of High Performance Si Nanowire-based Non-Volatile Memory Cells
Topic: Nanoelectronics and Nanoscale Electronics
Published: 5/16/2011
Authors: Xiaoxiao Zhu, Qiliang Li, D. E Ioannou, Diefeng Gu, John E Bonevich, Helmut Baumgart, John S Suehle, Curt A Richter
Abstract: We report the fabrication, characterization and simulation of Si nanowire SONOS-like non-volatile memory with HfO2 charge trapping layers of varying thickness. The memory cells, which are fabricated by self-aligning in-situ grown Si nanowires, exhibi ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907251

34. Rotational Grain Boundaries in Graphene
Topic: Nanoelectronics and Nanoscale Electronics
Published: 5/12/2011
Authors: Eric J Cockayne, Gregory M. Rutter, N Guisinger, Jason Crain, Joseph A Stroscio, Phillip First
Abstract: Defects in graphene are of interest for their effect on electronic transport in this two-dimensional material. Point defects of typically two-fold and three-fold symmetry have long been observed in scanning tunneling microscopy (STM) studies of gra ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=906586

35. Flexible Memristors Fabricated through Sol-Gel Hydrolysis
Topic: Nanoelectronics and Nanoscale Electronics
Published: 5/4/2011
Authors: Joseph Leo Tedesco, Nadine Gergel-Hackett, Laurie Stephey, Madelaine Herminia Hernandez, Andrew A Herzing, Lee J Richter, Christina Ann Hacker, Joseph J Kopanski, Jan Obrzut, Curt A Richter
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908437

36. Flexible Memristors Fabricated through Sol-Gel Hydrolysis
Topic: Nanoelectronics and Nanoscale Electronics
Published: 5/1/2011
Authors: Joseph Leo Tedesco, Nadine Gergel-Hackett, Laurie Stephey, Andrew A Herzing, Madelaine Herminia Hernandez, Joseph J Kopanski, Christina Ann Hacker, Curt A Richter
Abstract: Memristors were fabricated on flexible polyethylene terephthalate substrates consisting of an oxide film generated through hydrolysis of a spun-on sol-gel. X-ray photoelectron spectroscopy, spectroscopic ellipsometry, transmission electron microscopy ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907805

37. Microscopic Polarization in the Bilayer Graphene
Topic: Nanoelectronics and Nanoscale Electronics
Published: 4/24/2011
Authors: Joseph A Stroscio, Suyong S. Jung, Nikolai Nikolayevich Klimov, David B Newell, Nikolai B Zhitenev, Gregory Rutter
Abstract: Bilayer graphene has drawn significant attention due to the opening of a band gap in its low energy electronic spectrum, which offers a route to electronic applications that is not practical with single layer graphene. The gap can be either tunable ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907723

38. Silicon-based Molecular Electronics in the Post-Hype Era
Topic: Nanoelectronics and Nanoscale Electronics
Published: 4/8/2011
Author: Christina Ann Hacker
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908431

39. Flexible Memristors: Fabrication and Characterization for Electronics Applications
Topic: Nanoelectronics and Nanoscale Electronics
Published: 4/4/2011
Authors: Joseph Leo Tedesco, Nadine Gergel-Hackett, Laurie Stephey, Andrew A Herzing, Madelaine Herminia Hernandez, Jan Obrzut, Joseph J Kopanski, Christina Ann Hacker, Curt A Richter
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908436

40. Measurements and Standards for Nano-electrotechnologies: Progress and Challenges
Topic: Nanoelectronics and Nanoscale Electronics
Published: 3/30/2011
Author: Herbert S Bennett
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908451



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