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Topic Area: Nanoelectronics and Nanoscale Electronics

Displaying records 21 to 30 of 137 records.
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21. TaOx Memristive Devices with Ferromagnetic Electrodes
Topic: Nanoelectronics and Nanoscale Electronics
Published: 12/7/2011
Authors: Hyuk-Jae Jang, Pragya Rasmi Shrestha, Oleg A Kirillov, Helmut Baumgart, Kin P Cheung, Oana Jurchescu, Curt A Richter
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910359

22. Electrical Contacts to One- and Two-Dimensional Nanomaterials
Topic: Nanoelectronics and Nanoscale Electronics
Published: 12/6/2011
Authors: Francois Leonard, Albert A. Talin
Abstract: Nanostructures such as carbon nanotubes, nanowires and graphene are being intensively explored for future electronic, photonic, and energy applications. In order for these nanosystems to progress from the research laboratory to technology, it is crit ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908534

23. Electron Transport in Gold Nanowires: Stable 1-, 2- and 3-Dimensional Atomic Structures and Non-Integer Conduction States
Topic: Nanoelectronics and Nanoscale Electronics
Published: 9/14/2011
Authors: Francesca M Tavazza, Douglas T Smith, Lyle E Levine, Jon Robert Pratt, Anne Marie Chaka
Abstract: Experimental conductivity measurements made during highly stable tensile deformation of Au nanowires show a rich variety of behaviors, including non-integer quantum conductance plateaus, transitions and slopes. Using tight binding conductance cal ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=906808

24. Influence of Metal/Graphene Coupling on the Operation and Scalability of Graphene Field-Effect-Transistors
Topic: Nanoelectronics and Nanoscale Electronics
Published: 8/24/2011
Authors: Pei Zhao, Qin Q. Zhang, Debdeep Jena, Siyuranga O Koswatta
Abstract: We explore the effects of metal contacts on the operation and scalability of 2D Graphene Field-Effect-Transistors (GFETs) using detailed numerical device simulations based on the non-equilibrium Green‰s function formalism self-consistently solved wit ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907183

25. O2 A-band line parameters to support atmospheric remote sensing. Part II: The rare isotopologues
Topic: Nanoelectronics and Nanoscale Electronics
Published: 7/21/2011
Authors: Joseph Terence Hodges, David A Long, Daniel K Havey, S. S. Yu, M Okumura, Charles E Miller
Abstract: Frequency-stabilized cavity ring-down spectroscopy (FS-CRDS) was employed to measure over 100 transitions in the R-branch of the b1Σg+←X3Σg-(0,0) band for the rare O2 isotopologues. The use of 17O- and 18O-enriched mixtures allowed fo ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907932

26. Imaging of nanoscale charge transport in bulk heterojunction solar cells
Topic: Nanoelectronics and Nanoscale Electronics
Published: 6/17/2011
Authors: Behrang H Hamadani, Nadine Emily Gergel-Hackett, Paul M Haney, Nikolai B Zhitenev
Abstract: We have studied the local charge transport properties of organic bulk heterojunction solar cells based on the blends of poly(3-hexylthiophene) (P3HT) and phenyl-C61-butyric acid methyl ester (PCBM) with a photoconductive atomic force microscope (PCAF ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905890

27. Fabrication and characterization of silicon-based molecular electronic devices
Topic: Nanoelectronics and Nanoscale Electronics
Published: 5/21/2011
Authors: Christina Ann Hacker, Michael A Walsh, Sujitra Jeanie Pookpanratana, Mariona Coll Bau, Curt A Richter
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908433

28. Electrical Reliability Testing of Single-Walled Carbon Nanotube Networks
Topic: Nanoelectronics and Nanoscale Electronics
Published: 5/18/2011
Authors: Mark C Strus, Ann Chiaramonti Chiaramonti Debay, Robert R Keller, Yung Joon Jung, Younglae Kim
Abstract: We present test methods to investigate the electrical reliability of nanoscale lines of highly-aligned, networked, metallic/semiconducting single-walled carbon nanotubes (SWCNTs) fabricated through a template-based fluidic assembly process. We find ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907014

29. Fabrication, Characterization and Simulation of High Performance Si Nanowire-based Non-Volatile Memory Cells
Topic: Nanoelectronics and Nanoscale Electronics
Published: 5/16/2011
Authors: Xiaoxiao Zhu, Qiliang Li, D. E Ioannou, Diefeng Gu, John E Bonevich, Helmut Baumgart, John S Suehle, Curt A Richter
Abstract: We report the fabrication, characterization and simulation of Si nanowire SONOS-like non-volatile memory with HfO2 charge trapping layers of varying thickness. The memory cells, which are fabricated by self-aligning in-situ grown Si nanowires, exhibi ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907251

30. Rotational Grain Boundaries in Graphene
Topic: Nanoelectronics and Nanoscale Electronics
Published: 5/12/2011
Authors: Eric J Cockayne, Gregory M. Rutter, N Guisinger, Jason Crain, Joseph A Stroscio, Phillip First
Abstract: Defects in graphene are of interest for their effect on electronic transport in this two-dimensional material. Point defects of typically two-fold and three-fold symmetry have long been observed in scanning tunneling microscopy (STM) studies of gra ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=906586



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