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Topic Area: Nanoelectronics and Nanoscale Electronics

Displaying records 21 to 30 of 135 records.
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21. Electron Transport in Gold Nanowires: Stable 1-, 2- and 3-Dimensional Atomic Structures and Non-Integer Conduction States
Topic: Nanoelectronics and Nanoscale Electronics
Published: 9/14/2011
Authors: Francesca M Tavazza, Douglas T Smith, Lyle E Levine, Jon Robert Pratt, Anne Marie Chaka
Abstract: Experimental conductivity measurements made during highly stable tensile deformation of Au nanowires show a rich variety of behaviors, including non-integer quantum conductance plateaus, transitions and slopes. Using tight binding conductance cal ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=906808

22. Influence of Metal/Graphene Coupling on the Operation and Scalability of Graphene Field-Effect-Transistors
Topic: Nanoelectronics and Nanoscale Electronics
Published: 8/24/2011
Authors: Pei Zhao, Qin Zhang, Debdeep Jena, Siyuranga O Koswatta
Abstract: We explore the effects of metal contacts on the operation and scalability of 2D Graphene Field-Effect-Transistors (GFETs) using detailed numerical device simulations based on the non-equilibrium Green‰s function formalism self-consistently solved wit ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907183

23. O2 A-band line parameters to support atmospheric remote sensing. Part II: The rare isotopologues
Topic: Nanoelectronics and Nanoscale Electronics
Published: 7/21/2011
Authors: Joseph Terence Hodges, David A Long, Daniel K Havey, S. S. Yu, M Okumura, Charles E Miller
Abstract: Frequency-stabilized cavity ring-down spectroscopy (FS-CRDS) was employed to measure over 100 transitions in the R-branch of the b1Σg+←X3Σg-(0,0) band for the rare O2 isotopologues. The use of 17O- and 18O-enriched mixtures allowed fo ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907932

24. Imaging of nanoscale charge transport in bulk heterojunction solar cells
Topic: Nanoelectronics and Nanoscale Electronics
Published: 6/17/2011
Authors: Behrang H Hamadani, Nadine Emily Gergel-Hackett, Paul M Haney, Nikolai B Zhitenev
Abstract: We have studied the local charge transport properties of organic bulk heterojunction solar cells based on the blends of poly(3-hexylthiophene) (P3HT) and phenyl-C61-butyric acid methyl ester (PCBM) with a photoconductive atomic force microscope (PCAF ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905890

25. Fabrication and characterization of silicon-based molecular electronic devices
Topic: Nanoelectronics and Nanoscale Electronics
Published: 5/21/2011
Authors: Christina Ann Hacker, Michael A Walsh, Sujitra Jeanie Pookpanratana, Mariona Coll Bau, Curt A Richter
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908433

26. Electrical Reliability Testing of Single-Walled Carbon Nanotube Networks
Topic: Nanoelectronics and Nanoscale Electronics
Published: 5/18/2011
Authors: Mark C Strus, Ann Chiaramonti Chiaramonti Debay, Robert R Keller, Yung Joon Jung, Younglae Kim
Abstract: We present test methods to investigate the electrical reliability of nanoscale lines of highly-aligned, networked, metallic/semiconducting single-walled carbon nanotubes (SWCNTs) fabricated through a template-based fluidic assembly process. We find ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907014

27. Fabrication, Characterization and Simulation of High Performance Si Nanowire-based Non-Volatile Memory Cells
Topic: Nanoelectronics and Nanoscale Electronics
Published: 5/16/2011
Authors: Xiaoxiao Zhu, Qiliang Li, D. E Ioannou, Diefeng Gu, John E Bonevich, Helmut Baumgart, John S Suehle, Curt A Richter
Abstract: We report the fabrication, characterization and simulation of Si nanowire SONOS-like non-volatile memory with HfO2 charge trapping layers of varying thickness. The memory cells, which are fabricated by self-aligning in-situ grown Si nanowires, exhibi ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907251

28. Rotational Grain Boundaries in Graphene
Topic: Nanoelectronics and Nanoscale Electronics
Published: 5/12/2011
Authors: Eric J Cockayne, Gregory M. Rutter, N Guisinger, Jason Crain, Joseph A Stroscio, Phillip First
Abstract: Defects in graphene are of interest for their effect on electronic transport in this two-dimensional material. Point defects of typically two-fold and three-fold symmetry have long been observed in scanning tunneling microscopy (STM) studies of gra ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=906586

29. Flexible Memristors Fabricated through Sol-Gel Hydrolysis
Topic: Nanoelectronics and Nanoscale Electronics
Published: 5/4/2011
Authors: Joseph Leo Tedesco, Nadine Gergel-Hackett, Laurie Stephey, Madelaine Herminia Hernandez, Andrew A Herzing, Lee J Richter, Christina Ann Hacker, Joseph J Kopanski, Jan Obrzut, Curt A Richter
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908437

30. Flexible Memristors Fabricated through Sol-Gel Hydrolysis
Topic: Nanoelectronics and Nanoscale Electronics
Published: 5/1/2011
Authors: Joseph Leo Tedesco, Nadine Gergel-Hackett, Laurie Stephey, Andrew A Herzing, Madelaine Herminia Hernandez, Joseph J Kopanski, Christina Ann Hacker, Curt A Richter
Abstract: Memristors were fabricated on flexible polyethylene terephthalate substrates consisting of an oxide film generated through hydrolysis of a spun-on sol-gel. X-ray photoelectron spectroscopy, spectroscopic ellipsometry, transmission electron microscopy ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907805



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