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Topic Area: Characterization, Nanometrology, and Nanoscale Measurements
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Displaying records 31 to 40 of 195 records.
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31. Microwave Conductance of Semicontinuous Metallic Films from Coplanar Waveguide Scattering Parameters
Topic: Characterization, Nanometrology, and Nanoscale Measurements
Published: 5/6/2013
Authors: Jan Obrzut, Oleg A Kirillov
Abstract: Conductance of thin semicontinuous metallic films is measured in coplanar waveguide configuration at frequencies of 100 MHz to 20 GHz. The presented model of the microwave network correlates the experimental scattering parameters (S11) and (S21) with ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912337

32. Surface-Engineered Nanomaterials as X-ray Absorbing Adjuvant Agents for Auger-Mediated Chemo-Radiation
Topic: Characterization, Nanometrology, and Nanoscale Measurements
Published: 4/30/2013
Authors: Robert Francis Cook, Sang-Min Lee, De-Hao D. Tsai, Vincent A Hackley, Martin W. Brechbiel
Abstract: We demonstrate a prototype approach to formulate gold nanoparticle (AuNP)‹based X‹ray absorbing adjuvant agents through surface‹engineering of cisplatin pharmacophore (PtII) with lipoic acid‹modified polyacrylate (denoted as PtII‹AuNPs). Design of Pt ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911911

33. TSV Reveal height and bump dimension metrology by the TSOM method
Topic: Characterization, Nanometrology, and Nanoscale Measurements
Published: 4/30/2013
Authors: Ravikiran Attota, Haesung Park, Victor Vartanian, Ndubuisi George Orji, Richard A Allen
Abstract: Through-focus scanning optical microscopy (TSOM) transforms conventional optical microscopes into truly 3D metrology tools for nanoscale- to- microscale dimensional analysis with nanometer-scale sensitivity. Although not a resolution enhancement meth ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913667

34. Use of TSOM for sub-11 nm node pattern defect detection and HAR features
Topic: Characterization, Nanometrology, and Nanoscale Measurements
Published: 4/30/2013
Authors: Ravikiran Attota, Abraham Arceo, Bunday Benjamin
Abstract: In-line metrologies currently used in the semiconductor industry are being challenged by the aggressive pace of device scaling and the adoption of novel device architectures. In defect inspection, conventional bright field techniques will not likely ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913698

35. Enhancing 9 nm Node Dense Patterned Defect Optical Inspection using Polarization, Angle, and Focus
Topic: Characterization, Nanometrology, and Nanoscale Measurements
Published: 4/10/2013
Authors: Bryan M Barnes, Francois R. Goasmat, Martin Y Sohn, Hui Zhou, Abraham Arceo
Abstract: To measure the new SEMATECH 9 nm node Intentional Defect Array (IDA) and subsequent small, complex defects, a methodology has been used to exploit the rich information content generated when simulating or acquiring several images of sub-wavelength-si ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913542

36. Intercomparison between optical and x-ray scatterometry measurements of FinFET structures
Topic: Characterization, Nanometrology, and Nanoscale Measurements
Published: 4/8/2013
Authors: Paul Lemaillet, Thomas Avery Germer, Regis J Kline, Daniel Franklin Sunday, Chengqing C. Wang, Wen-Li Wu
Abstract: In this paper, we present a comparison of profile measurements of vertical field effect transistor (FinFET) fin arrays by optical critical dimension (OCD) metrology and critical dimension small angle X-ray scattering (CD-SAXS) metrology. Spectroscopi ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913230

37. Distributed Force Probe Bending Model of CD-AFM Bias
Topic: Characterization, Nanometrology, and Nanoscale Measurements
Published: 4/1/2013
Authors: Vladimir A. Ukraintsev, Ndubuisi George Orji, Theodore Vincent Vorburger, Ronald G Dixson, Joseph Fu, Richard M Silver
Abstract: Critical Dimension AFM (CD-AFM) is a widely used reference metrology technique. To characterize modern semiconductor devices, small and flexible probes, often 15 nm to 20 nm in diameter, are used. Recent studies have reported uncontrolled and signif ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912266

38. Robust Elemental Mapping of Nanostructures at Ultrahigh Resolution using Event-Streamed Spectrum Imaging in an Aberration-Corrected Analytical Electron Microscope
Topic: Characterization, Nanometrology, and Nanoscale Measurements
Published: 4/1/2013
Authors: Andrew A Herzing, Ian M. Anderson
Abstract: We detail the application of X-ray energy dispersive spectroscopy (XEDS) event-streamed spectral imaging (ESSI) in an aberration-corrected analytical electron microscope (AEM) as a reliable method for the acquisition of ultra-high spatial resolution ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910229

39. Metrology For Organic Monolayers On Cobalt Surfaces
Topic: Characterization, Nanometrology, and Nanoscale Measurements
Published: 3/27/2013
Authors: Sujitra Jeanie Pookpanratana, Leigh Kent Lydecker, Hyuk-Jae Jang, Curt A Richter, Christina Ann Hacker
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912903

40. Frontiers of Characterization and Metrology for Nanoelectronics: 2013
Topic: Characterization, Nanometrology, and Nanoscale Measurements
Published: 3/26/2013
Authors: Erik M Secula, David G Seiler
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913713



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