NIST logo

Publications Portal

You searched on: Topic Area: Characterization, Nanometrology, and Nanoscale Measurements Sorted by: date

Displaying records 121 to 124.
Resort by: Date / Title


121. Through-focus Scanning and Scatterfield Optical Methods for Advanced Overlay Target Analysis
Topic: Characterization, Nanometrology, and Nanoscale Measurements
Published: 9/1/2008
Authors: Ravikiran Attota, Michael T. Stocker, Richard M Silver, Nathanael A Heckert, Hui H. Zhou, Richard J Kasica, Lei Chen, Ronald G Dixson, Ndubuisi George Orji, Bryan M Barnes, Peter Lipscomb
Abstract: In this paper we present overlay measurement techniques that use small overlay targets for advanced semiconductor applications. We employ two different optical methods to measure overlay using modified conventional optical microscope platforms. They ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=902294

122. Structure Characterization of Nanoporous Interlevel Dielectric Thin Films With X-Ray and Neutron Radiation
Topic: Characterization, Nanometrology, and Nanoscale Measurements
Published: 3/6/2007
Authors: Christopher L Soles, Hae-Jeong Lee, B D. Vogt, Eric K Lin, Wen-Li Wu
Abstract: The structure characterization of nanoporous interlevel dielectric (ILD) thin films is challenging because of the small sample volumes and nanometer dimensions of the pores. In this chapter, we review characterization methods for porous ILD material ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=852526

123. Dynamics and Free Energy of Polymers Partitioning into a Nanoscale Pore
Topic: Characterization, Nanometrology, and Nanoscale Measurements
Published: 12/1/1997
Authors: S. M. Bezrukov, I Vodyanoy, R A Brutyan, J. J. Kasianowicz
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=100220

124. Raman spectroscopy based measurements of carrier concentration in n-type GaN nanowires grown by plasma-assisted molecular beam epitaxy
Topic: Characterization, Nanometrology, and Nanoscale Measurements
Published: Date unknown
Authors: Lawrence H Robins, Elizabeth Horneber, Norman A Sanford, Kristine A Bertness, John B Schlager
Abstract: The carrier concentration in ensembles of n-type GaN nanowires (NWs) grown by plasma-assisted molecular beam epitaxy was determined by curve-fitting analysis of Raman spectra, based on modeling of the carrier concentration dependence of the longitudi ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=915090



Search NIST-wide:


(Search abstract and keywords)


Last Name:
First Name:







Special Publications:

Looking for a NIST Special Publication (NIST SP Series)? Place the series number and dash in the report number field (Example: 800-) and begin your search.

  • SP 250-XX: Calibration Services
  • SP 260-XX: Standard Reference Materials
  • SP 300-XX: Precision Measurement and Calibration
  • SP 400-XX: Semiconductor Measurement Technology
  • SP 480-XX: Law Enforcement Technology
  • SP 500-XX: Computer Systems Technology
  • SP 700-XX: Industrial Measurement Series
  • SP 800-XX: Computer Security Series
  • SP 823-XX: Integrated Services Digital Network Series