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You searched on: Topic Area: Characterization, Nanometrology, and Nanoscale Measurements

Displaying records 61 to 70 of 125 records.
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61. Residual Layer Thickness Control and Metrology in Jet and Flash Imprint Lithography
Topic: Characterization, Nanometrology, and Nanoscale Measurements
Published: 4/10/2012
Authors: Ravikiran Attota, Shrawan Singhal, Sreenivasan S.V.
Abstract: Jet-and-Flash Imprint Lithography (J-FIL) has demonstrated capability of high-resolution patterning at low costs. For accurate pattern transfer using J-FIL, it is imperative to have control of the residual layer thickness (RLT) of cured resist undern ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910872

62. Scatterfield Microscopy of 22 nm Node Patterned Defects using Visible and DUV Light
Topic: Characterization, Nanometrology, and Nanoscale Measurements
Published: 4/4/2012
Authors: Bryan M Barnes, Martin Y Sohn, Francois R. Goasmat, Hui Zhou, Richard M Silver, Abraham Arceo
Abstract: Smaller patterning dimensions and novel architectures are fostering research into improved methods of defect detection in semiconductor device manufacturing. This initial experimental study, augmented with simulation, evaluates scatterfield microscop ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910963

63. Tumor Necrosis Factor Interaction with Gold Nanoparticles
Topic: Characterization, Nanometrology, and Nanoscale Measurements
Published: 3/14/2012
Authors: De-Hao D. Tsai, Sherrie R. Elzey, Frank W DelRio, Robert I. MacCuspie, Suvajyoti S. Guha, Michael Russel Zachariah, Athena M Keene, Jeffrey D Clogston, Vincent A Hackley
Abstract: We report on a systematic investigation of molecular conjugation of tumor necrosis factor protein-α (TNF) onto gold nanoparticles (AuNPs) and the subsequent binding behavior to its antibody (anti-TNF). We employ a combination of physical and spe ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=909899

64. Direct observation of nucleation and early stages of growth of GaN nanowires
Topic: Characterization, Nanometrology, and Nanoscale Measurements
Published: 2/15/2012
Authors: Rosa E. Diaz, Renu Sharma, Karalee Jarvis, Qinglei Zhang, Subhash Mahajan
Abstract: We report for the first time direct observations of the nucleation and early stages of growth of GaN nanowires. The nanowires were formed by exposing Au + Ga droplets to ammonia. The formation process was observed in situ, and controlled in real time ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=906318

65. CEINT/NIST PROTOCOL for the PREPARATION OF NANOSCALE TiO2 DISPERSIONS IN AN ENVIRONMENTAL MATRIX FOR ECO-TOXICOLOGICAL ASSESSMENT
Topic: Characterization, Nanometrology, and Nanoscale Measurements
Published: 2/2/2012
Authors: Julian S. Taurozzi, Vincent A Hackley, Mark R Wiesner
Abstract: Toxicity and fate assessment are key elements in the evaluation of the environmental, health and safety risks of engineered nanomaterials (ENMs). While significant effort and resources have been devoted to the toxicological evaluation of many ENMs, i ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910395

66. Nanometrology Using Through-Focus Scanning Optical Microscopy Method
Topic: Characterization, Nanometrology, and Nanoscale Measurements
Published: 12/21/2011
Authors: Ravikiran Attota, Richard M Silver
Abstract: We present an initial review of a novel through-focus scanning optical microscopy (TSOM) imaging method that produces nanometer dimensional measurement sensitivity using a conventional bright-field optical microscope. In the TSOM method a target is ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905395

67. Three-dimensional Nanometrology with TSOM Optical Method
Topic: Characterization, Nanometrology, and Nanoscale Measurements
Published: 12/10/2011
Author: Ravikiran Attota
Abstract: Through-focus scanning optical microscopy (TSOM) is a new metrology method that achieves 3D nanoscale measurement sensitivity using conventional optical microscopes; measurement sensitivities are comparable to what is typical when using scatterometry ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910045

68. Characterization and Resistive Switching Properties of Solution-Processed HfO2, HfSiO4, and ZrSiO4 Thin Films on Rigid and Flexible Substrates
Topic: Characterization, Nanometrology, and Nanoscale Measurements
Published: 12/7/2011
Authors: Joseph Leo Tedesco, Walter Zheng, Oleg A Kirillov, Sujitra Jeanie Pookpanratana, Hyuk-Jae Jang, Premsagar Purushotham Kavuri, Nhan V Nguyen, Curt A Richter
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910358

69. TSOM Method for Nanoelectronics Dimensional Metrology
Topic: Characterization, Nanometrology, and Nanoscale Measurements
Published: 11/18/2011
Author: Ravikiran Attota
Abstract: Through-focus scanning optical microscopy (TSOM) is a relatively new method that transforms conventional optical microscopes into truly three-dimensional metrology tools for nanoscale to microscale dimensional analysis. TSOM achieves this by acquirin ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908623

70. Strategies for Nanoscale Contour Metrology using Critical Dimension Atomic Force Microscopy
Topic: Characterization, Nanometrology, and Nanoscale Measurements
Published: 9/30/2011
Authors: Ndubuisi George Orji, Ronald G Dixson, Andras Vladar, Michael T Postek
Abstract: Contour metrology is one of the techniques used to verify optical proximity correction (OPC) in lithography models. The use of these methods, which are known as resolution enhancement techniques (RET), are necessitated by the continued decrease in f ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=909559



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