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Displaying records 51 to 60 of 80 records.
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51. Optical and Conductivity Properties of Films from Liquid-Phase Exfoliation of Natural Graphite
Topic: Semiconductor Materials
Published: 5/15/2009
Authors: Jan Obrzut, Kalman D Migler
Abstract: We experimentally determine the conductivity and optical transmittance of graphite layers, obtained from the liquid phase exfoliation of natural crystalline graphite. The measured transmittance values range from 0.9 to 0.97, comparable to the theoret ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=901494

52. Optimizing Residual Gas Analyzers for Process Monitoring
Topic: Semiconductor Materials
Published: 12/1/1997
Author: C R Tilford
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=100330

53. Organic Electronics: Challenges and Opportunities
Topic: Semiconductor Materials
Published: 3/31/2010
Author: Calvin Chan
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905389

54. Papers Selected from the International Semiconductor Device Research Symposium 2007 ISDRS 2007 Foreword
Topic: Semiconductor Materials
Published: 10/1/2008
Authors: A. Iliadis, Curt A Richter
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=904091

55. Raman Spectroscopic Determination of Electron Concentration in n-Type GaSb
Topic: Semiconductor Materials
Published: 11/19/2008
Authors: James E Maslar, Wilbur Scott Hurst, C Wang
Abstract: Phonon-plasmon coupled mode Raman spectra of n-type GaSb were measured at room temperature as a function of electron concentration. These spectra were obtained using an optical system based on 752.55 nm excitation. Utilization of this wavelength pe ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=831013

56. Raman Spectroscopic Determination of Hole Concentration in p-Type GaSb
Topic: Semiconductor Materials
Published: 1/2/2008
Authors: James E Maslar, Wilbur Scott Hurst, C Wang
Abstract: Room temperature p-type GaSb bulk coupled mode spectra were measured as a function hole concentration. These spectra were obtained using an optical system based on 752.55 nm excitation in order to obtain more sensitivity to bulk GaSb coupled mode sc ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=830981

57. Raman Spectroscopy of n-Type and p-Type GaSb with Multiple Excitation Wavelengths
Topic: Semiconductor Materials
Published: 10/1/2007
Authors: James E Maslar, Wilbur Scott Hurst, C Wang
Abstract: The interpretation of Raman spectra of GaSb can be complicated by the presence of a so-called surface space-charge region (SSCR), resulting in an inhomogeneous near-surface Raman scattering environment. To fully interpret Raman spectra, it is i ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=902678

58. Raman spectroscopy-enhanced IIT: In situ analysis of mechanically stressed polycrystalline Si thin films
Topic: Semiconductor Materials
Published: 7/8/2014
Authors: Yvonne Beatrice Gerbig, Chris A Michaels, Robert Francis Cook
Abstract: Exposed to mechanical stress, semiconductor materials may phase transform, resulting in changes of crystallographic structure and material properties, rather than deform by plastic flow. As a consequence, prediction of the state and distribution of s ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=915665

59. Self-Assembly of Dendronized Perylene Bisimides into Complex Helical Columns
Topic: Semiconductor Materials
Published: 6/24/2011
Authors: Virgil Percec, Mihai Peterca, Timur Tadjiev, Xiangbing Zeng, Goran Ungar, Pawaret Leowanawat, Emad Aqad, Mohammad Imam, Brad Rosen, Umit Akbey, Robert Graf, Sivakumar Sekharan, Daniel Sebastiani, Hans -W Spiess, Paul A Heiney, Steven D Hudson
Abstract: The synthesis of perylene 3,4:9,10-tetracarboxylic acid bisimides (PBIs) dendronized with first generation dendrons containing 0 to 4 methylenic units (m) between the imide group and the dendron, (3,4,5)12G1-m-PBI, is reported. Structural analysis of ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908817

60. Self-Repairing Complex Helical Columns Generated via Kinetically Controlled Self-Assembly of Dendronized Perylene Bisimides
Topic: Semiconductor Materials
Published: 11/16/2011
Authors: Virgil Percec, Steven D Hudson, Mihai Peterca, Pawaret Leowanawat, Emad Aqad, Robert Graf, Hans -W Spiess, Xiangbing Zeng, Goran Ungar, Paul A Heiney
Abstract: The dendronized perylene 3,4:9,10-tetracarboxylic acid bisimide (PBI) (3,4,5)12G1-3-PBI was recently shown to self-assemble in a complex helical column containing tetramers of PBI as the basic repeat unit. The tetramers contain a pair of two molecule ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=909636



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