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Topic Area: Semiconductor Materials
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Displaying records 41 to 50 of 74 records.
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41. NIST High Resolution X-Ray Diffraction Standard Reference Material: SRM 2000
Topic: Semiconductor Materials
Published: Date unknown
Authors: Donald A Windover, David L. Gil, Albert Henins, James P Cline
Abstract: NIST recently released a standard reference material (SRM) for the calibration of high resolution X-ray diffraction (HRXRD) instruments. HRXRD is extensively used in the characterization of lattice distortion in thin single, epitaxial crystal layer ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=902585

42. Nanoimprint Lithography for the Direct Patterning of Nanoporous Interlayer Dielectric Insulator Materials
Topic: Semiconductor Materials
Published: 3/28/2008
Authors: Hyun W. Ro, Hae-Jeong Lee, Eric K Lin, Alamgir Karim, Daniel R. Hines, Do Y. Yoon, Christopher L Soles
Abstract: Directly patterning dielectric insulator materials for semiconductor devices via nanoimprint lithography has the potential to simplify fabrication processes and reduce manufacturing costs. However, the prospect of mechanically forming these material ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=852733

43. Noise in ZnO Nanowire Field Effect Transistors
Topic: Semiconductor Materials
Published: 2/5/2009
Authors: Hao Xiong, Wenyong Wang, John S Suehle, Curt A Richter, W. Hong, T. Lee
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=904093

44. Observation of spin-valve effect in Alq3 using a low work function metal
Topic: Semiconductor Materials
Published: 9/7/2012
Authors: Hyuk-Jae Jang, Kurt Pernstich, David J Gundlach, Oana Jurchescu, Curt A Richter
Abstract: We present the observation of magnetoresistance in Co/Ca/Alq3/Ca/NiFe spin-valve devices. Thin Ca layers contacting 150 nm thick Alq3 enable the injection of spin-polarized electrons into Alq3 due to engineering of the band alignment. The devices ex ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911326

45. Optical and Conductivity Properties of Films from Liquid-Phase Exfoliation of Natural Graphite
Topic: Semiconductor Materials
Published: 5/15/2009
Authors: Jan Obrzut, Kalman D Migler
Abstract: We experimentally determine the conductivity and optical transmittance of graphite layers, obtained from the liquid phase exfoliation of natural crystalline graphite. The measured transmittance values range from 0.9 to 0.97, comparable to the theoret ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=901494

46. Optimizing Residual Gas Analyzers for Process Monitoring
Topic: Semiconductor Materials
Published: 12/1/1997
Author: C R Tilford
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=100330

47. Organic Electronics: Challenges and Opportunities
Topic: Semiconductor Materials
Published: 3/31/2010
Author: Calvin Chan
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905389

48. Papers Selected from the International Semiconductor Device Research Symposium 2007 ISDRS 2007 Foreword
Topic: Semiconductor Materials
Published: 10/1/2008
Authors: A. Iliadis, Curt A Richter
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=904091

49. Raman Spectroscopic Determination of Electron Concentration in n-Type GaSb
Topic: Semiconductor Materials
Published: 11/19/2008
Authors: James E Maslar, Wilbur S. Hurst, C Wang
Abstract: Phonon-plasmon coupled mode Raman spectra of n-type GaSb were measured at room temperature as a function of electron concentration. These spectra were obtained using an optical system based on 752.55 nm excitation. Utilization of this wavelength pe ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=831013

50. Raman Spectroscopic Determination of Hole Concentration in p-Type GaSb
Topic: Semiconductor Materials
Published: 1/2/2008
Authors: James E Maslar, Wilbur S. Hurst, C Wang
Abstract: Room temperature p-type GaSb bulk coupled mode spectra were measured as a function hole concentration. These spectra were obtained using an optical system based on 752.55 nm excitation in order to obtain more sensitivity to bulk GaSb coupled mode sc ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=830981



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