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Topic Area: Semiconductor Materials
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Displaying records 41 to 50 of 71 records.
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41. Noise in ZnO Nanowire Field Effect Transistors
Topic: Semiconductor Materials
Published: 2/5/2009
Authors: Hao Xiong, Wenyong Wang, John S Suehle, Curt A Richter, W. Hong, T. Lee
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=904093

42. Observation of spin-valve effect in Alq3 using a low work function metal
Topic: Semiconductor Materials
Published: 9/7/2012
Authors: Hyuk-Jae Jang, Kurt Pernstich, David J Gundlach, Oana Jurchescu, Curt A Richter
Abstract: We present the observation of magnetoresistance in Co/Ca/Alq3/Ca/NiFe spin-valve devices. Thin Ca layers contacting 150 nm thick Alq3 enable the injection of spin-polarized electrons into Alq3 due to engineering of the band alignment. The devices ex ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911326

43. Optical and Conductivity Properties of Films from Liquid-Phase Exfoliation of Natural Graphite
Topic: Semiconductor Materials
Published: 5/15/2009
Authors: Jan Obrzut, Kalman D Migler
Abstract: We experimentally determine the conductivity and optical transmittance of graphite layers, obtained from the liquid phase exfoliation of natural crystalline graphite. The measured transmittance values range from 0.9 to 0.97, comparable to the theoret ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=901494

44. Optimizing Residual Gas Analyzers for Process Monitoring
Topic: Semiconductor Materials
Published: 12/1/1997
Author: C R Tilford
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=100330

45. Organic Electronics: Challenges and Opportunities
Topic: Semiconductor Materials
Published: 3/31/2010
Author: Calvin Chan
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905389

46. Papers Selected from the International Semiconductor Device Research Symposium 2007 ISDRS 2007 Foreword
Topic: Semiconductor Materials
Published: 10/1/2008
Authors: A. Iliadis, Curt A Richter
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=904091

47. Raman Spectroscopic Determination of Electron Concentration in n-Type GaSb
Topic: Semiconductor Materials
Published: 11/19/2008
Authors: James E Maslar, Wilbur S. Hurst, C Wang
Abstract: Phonon-plasmon coupled mode Raman spectra of n-type GaSb were measured at room temperature as a function of electron concentration. These spectra were obtained using an optical system based on 752.55 nm excitation. Utilization of this wavelength pe ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=831013

48. Raman Spectroscopic Determination of Hole Concentration in p-Type GaSb
Topic: Semiconductor Materials
Published: 1/2/2008
Authors: James E Maslar, Wilbur S. Hurst, C Wang
Abstract: Room temperature p-type GaSb bulk coupled mode spectra were measured as a function hole concentration. These spectra were obtained using an optical system based on 752.55 nm excitation in order to obtain more sensitivity to bulk GaSb coupled mode sc ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=830981

49. Raman Spectroscopy of n-Type and p-Type GaSb with Multiple Excitation Wavelengths
Topic: Semiconductor Materials
Published: 10/1/2007
Authors: James E Maslar, Wilbur S. Hurst, C Wang
Abstract: The interpretation of Raman spectra of GaSb can be complicated by the presence of a so-called surface space-charge region (SSCR), resulting in an inhomogeneous near-surface Raman scattering environment. To fully interpret Raman spectra, it is i ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=902678

50. Self-Assembly of Dendronized Perylene Bisimides into Complex Helical Columns
Topic: Semiconductor Materials
Published: 6/24/2011
Authors: Virgil Percec, Mihai Peterca, Timur Tadjiev, Xiangbing Zeng, Goran Ungar, Pawaret Leowanawat, Emad Aqad, Mohammad Imam, Brad Rosen, Umit Akbey, Robert Graf, Sivakumar Sekharan, Daniel Sebastiani, Hans -W Spiess, Paul A Heiney, Steven D Hudson
Abstract: The synthesis of perylene 3,4:9,10-tetracarboxylic acid bisimides (PBIs) dendronized with first generation dendrons containing 0 to 4 methylenic units (m) between the imide group and the dendron, (3,4,5)12G1-m-PBI, is reported. Structural analysis of ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908817



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