NIST logo

Publications Portal

You searched on: Topic Area: Semiconductor Materials Sorted by: title

Displaying records 41 to 50 of 80 records.
Resort by: Date / Title


41. Measuring the extent of phase separation in P3HT/PCBM photovoltaic blends with 1H spin diffusion NMR spectroscopy
Topic: Semiconductor Materials
Published: 4/5/2010
Authors: Ryan C Nieuwendaal, Chad R Snyder, Regis J Kline, Eric K Lin, David Lloyd VanderHart, Dean M DeLongchamp
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=903680

42. Mechanically Robust Spin-On Organosilicates Glasses for Nanoporous Applications
Topic: Semiconductor Materials
Published: 2/7/2007
Authors: Hyun Wook Ro, K Char, Eun-Chae Jeon, H C Kim, Dongil Kwon, Hae-Jeong Lee, J. H. Lee, Hee-Woo Rhee, Christopher L Soles, Do Y. Yoon
Abstract: An increasing number of technologies demand nanoporous materials with vastly improved physical, mechanical and thermal properties. This manuscript develops the microstructural basis for synthesizing organosilicate glasses (OSGs) with unprecedented ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=852621

43. Metrology, Nanocharacterization and Instrumentation for Emerging Nanotechnology and Nanoelectronics: Electrical and Optical Characterization
Topic: Semiconductor Materials
Published: 12/9/2007
Author: David G Seiler
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32866

44. Micro-scale measurement and modeling of stress in silicon surrounding a tungsten-filled through-silicon via
Topic: Semiconductor Materials
Published: 10/11/2011
Authors: Ryan P. Koseski, William A Osborn, Stephan J Stranick, Frank W DelRio, Mark D Vaudin, Thuy Dao, Vance H. Adams, Robert Francis Cook
Abstract: The stress in silicon surrounding a tungsten-filled through-silicon via (TSV) is measured using confocal Raman microscopy line scans across the TSV both before and after etch removal of an oxide stack used as a mask to define the TSV during fabricati ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908908

45. Microstructure evolution and development of annealed Ni/Au contacts to GaN nanowires
Topic: Semiconductor Materials
Published: 8/21/2012
Authors: Andrew M. Herrero, Paul Timothy Blanchard, Aric Warner Sanders, Matthew David Brubaker, Norman A Sanford, Alexana Roshko, Kristine A Bertness
Abstract: The development of Ni/Au contacts to Mg-doped GaN nanowires (NWs) is examined. Current-voltage (I-V) measurements of these Mg-doped nanowire devices frequently exhibit a strong degradation after annealing in N^d2^/O^d2^. This degradation originates f ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908853

46. Molecular Beam Epitaxial Growth and Characterization of Cd-Based II-VI Wide-Bandgap Compounds on Si Substrates
Topic: Semiconductor Materials
Published: 1/3/2005
Authors: G Brill, Y Chen, Paul M. Amirtharaj, W Sarney, N. K. Dhar, Deane Chandler-Horowitz
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=906311

47. NIST High Resolution X-Ray Diffraction Standard Reference Material: SRM 2000
Topic: Semiconductor Materials
Published: Date unknown
Authors: Donald A Windover, David L. Gil, Albert Henins, James P Cline
Abstract: NIST recently released a standard reference material (SRM) for the calibration of high resolution X-ray diffraction (HRXRD) instruments. HRXRD is extensively used in the characterization of lattice distortion in thin single, epitaxial crystal layer ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=902585

48. Nanoimprint Lithography for the Direct Patterning of Nanoporous Interlayer Dielectric Insulator Materials
Topic: Semiconductor Materials
Published: 3/28/2008
Authors: Hyun Wook Ro, Hae-Jeong Lee, Eric K Lin, Alamgir Karim, Daniel R. Hines, Do Y. Yoon, Christopher L Soles
Abstract: Directly patterning dielectric insulator materials for semiconductor devices via nanoimprint lithography has the potential to simplify fabrication processes and reduce manufacturing costs. However, the prospect of mechanically forming these material ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=852733

49. Noise in ZnO Nanowire Field Effect Transistors
Topic: Semiconductor Materials
Published: 2/5/2009
Authors: Hao Xiong, Wenyong Wang, John S Suehle, Curt A Richter, W. Hong, T. Lee
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=904093

50. Observation of spin-valve effect in Alq3 using a low work function metal
Topic: Semiconductor Materials
Published: 9/7/2012
Authors: Hyuk-Jae Jang, Kurt Pernstich, David J Gundlach, Oana Jurchescu, Curt A Richter
Abstract: We present the observation of magnetoresistance in Co/Ca/Alq3/Ca/NiFe spin-valve devices. Thin Ca layers contacting 150 nm thick Alq3 enable the injection of spin-polarized electrons into Alq3 due to engineering of the band alignment. The devices ex ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911326



Search NIST-wide:


(Search abstract and keywords)


Last Name:
First Name:







Special Publications:

Looking for a NIST Special Publication (NIST SP Series)? Place the series number and dash in the report number field (Example: 800-) and begin your search.

  • SP 250-XX: Calibration Services
  • SP 260-XX: Standard Reference Materials
  • SP 300-XX: Precision Measurement and Calibration
  • SP 400-XX: Semiconductor Measurement Technology
  • SP 480-XX: Law Enforcement Technology
  • SP 500-XX: Computer Systems Technology
  • SP 700-XX: Industrial Measurement Series
  • SP 800-XX: Computer Security Series
  • SP 823-XX: Integrated Services Digital Network Series