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Displaying records 1 to 10 of 42 records.
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1. A new interface defect spectroscopy method
Topic: Semiconductor Materials
Published: 4/13/2011
Authors: Jason T Ryan, Liangchun (Liangchun) Yu, Jae Han, Joseph J Kopanski, Kin P Cheung, Jason P Campbell, Fei Zhang, Chen Wang, John S Suehle, Vinny Tilak, Jody Fronheiser

2. Analysis of high-Q, gallium nitride nanowire resonators in response to deposited thin films
Topic: Semiconductor Materials
Published: 1/1/2011
Authors: J. R. Montague, M. Dalberth, J. M. Gray, D. Seghete, Kristine A Bertness, S M George, Victor M. Bright, C. T. Rogers, Norman A Sanford
Abstract: Gallium nitride nanowires (GaN-NWs) are systems of interest for mechanical resonance-based sensors due to their small mass and, in the case of c-axis NWs, high mechanical quality (Q) factors of 10,000‹100,000. We report on singly-clamped NW mechanic ...

3. Band Alignment of Metal-Oxide-Semiconductor Structure by Internal Photoemission Spectroscopy and Spectroscopic Ellipsometry
Topic: Semiconductor Materials
Published: 5/28/2010
Authors: Nhan V Nguyen, Oleg A Kirillov, John S Suehle

4. Band Offsets of Al^d2^O^d3^ / In^d1-x^Ga^dx^As (x = 0.53 and 0.75) and the Effects of Post-Deposition Annealing
Topic: Semiconductor Materials
Published: 2/2/2010
Authors: Nhan V Nguyen, Min Xu, Oleg A Kirillov, Pei D Ye, C Wang, Kin P Cheung, John S Suehle
Abstract: Band offsets at the interfaces of InxGa1-xAs / Al2O3 / Al where x = 0.53 and x = 0.75 were determined by internal photoemission and spectroscopic ellipsometry. The photoemission energy threshold at the InxGa1-xAs / Al2O3 interface was found to be in ...

5. Broad Band Optical Properties of Large Area Monolayer CVD Molybdenum Disulfide
Topic: Semiconductor Materials
Published: 11/21/2014
Authors: wei li, Glen Birdwell, Matin Amani, Yi-Hsien Lee, Ling Xi, Xuelei Liang, Lianmao Peng, Curt A Richter, Kong Jing, David J Gundlach, Nhan V Nguyen

6. Challenges and Opportunities of Organic Electronics
Topic: Semiconductor Materials
Published: 4/2/2010
Author: Calvin Chan

7. Contact resistance of low-temperature carbon nanotube vertical interconnects
Topic: Semiconductor Materials
Published: 8/20/2012
Authors: Ann Chiaramonti Chiaramonti Debay, Sten Vollebregt, R. Ishihara, Hugo Schellevis, Kees Beenakker
Abstract: In this work the electrical contact resistance and length dependant resistance of vertically aligned carbon nano- tubes (CNT) grown at 500 °C with high tube density (1011) are investigated by measuring samples with different CNT lengths. From scannin ...

8. Degradation of photovoltaic devices at high concentration by space charge limited currents
Topic: Semiconductor Materials
Published: 10/1/2013
Authors: Ari D Feldman, Richard K. Ahrenkiel, John H Lehman
Abstract: High-injection mobility reduction is examined by theory, modeling, and experimental data acquired by resonance coupled photoconductive decay (RCPCD). The ambipolar mobility is shown to reduce to zero when the constituent injection-dependent carr ...

9. Design and test of reliable, high strength, ingressive polycrystalline silicon microgripper arrays
Topic: Semiconductor Materials
Published: 1/2/2015
Authors: Siddharth Hazra, J L Beuth, Grant A Myers, Frank W DelRio, Maarten de Boer
Abstract: We present the design and extensive validation of a micromachined gripper array that enables reliable transmission of forces up to 10 milliNewtons. The gripper is constructed with polycrystalline silicon, a brittle material. Two ingressive snap-a ...

10. Effect of AlN Buffer Layer Properties on the Morphology and Polarity of GaN Nanowires Grown by Molecular Beam Epitaxy
Topic: Semiconductor Materials
Published: 9/8/2011
Authors: Matthew David Brubaker, Kristine A Bertness, Norman A Sanford, Albert Davydov, Igor Levin, Devin M. Rourke, Victor M. Bright
Abstract: Low temperature AlN buffer layers grown by plasma-assisted Molecular Beam Epitaxy (MBE) on Si (111) were found to significantly affect the subsequent growth morphology of GaN nanowires. The AlN buffer layers exhibited nanowire-like columnar protrusi ...

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