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1. A Comparison of Aluminum Nitride Freely Nucleated and Seeded on 6H-Silicon Carbide
Topic: Semiconductor Materials
Published: 1/1/2000
Authors: J H Edgar, Lawrence H Robins, S E Coatney, L Liu, J Chaudhuri, K Ignatiev, Z J Rek
Abstract: The crystal structure and optical properties of AlN single crystals prepared by the sublimation-recondensation method were analyzed by cathodoluminescence (CL) spectroscopy, Raman spectroscopy, and synchrotron white-beam x-ray topography (SWBXT). Nee ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=850353

2. A Fast, Simple Wafer-level Hall-Mobility Measurement Technique
Topic: Semiconductor Materials
Published: 10/21/2009
Authors: Liangchun Yu, Kin P Cheung, Vinayak Tilak, Greg Dunne, Kevin Matocha, Jason P Campbell, Kuang Sheng
Abstract: Mobility is a good indicator of device reliability. High channel mobility is one of the biggest challenges especially in novel devices such as high-k based MOSFET, III-V devices and SiC power MOSFET etc. Accurate measurement of channel mobility is ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905424

3. A Method to Assist in Establishing Consensus-Based Priorities for USNC TAG to IEC TC 113 Activities
Topic: Semiconductor Materials
Published: 11/30/2009
Author: Herbert S Bennett
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905379

4. A new interface defect spectroscopy method
Topic: Semiconductor Materials
Published: 4/13/2011
Authors: Jason T Ryan, Liangchun Yu, Jae Han, Joseph J Kopanski, Kin P Cheung, Jason P Campbell, Fei Zhang, Chen Wang, John S Suehle, Vinny Tilak, Jody Fronheiser
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908426

5. Analysis of high-Q, gallium nitride nanowire resonators in response to deposited thin films
Topic: Semiconductor Materials
Published: 1/1/2011
Authors: J. R. Montague, M. Dalberth, J. M. Gray, D. Seghete, Kristine A Bertness, S M George, Victor M. Bright, C. T. Rogers, Norman A Sanford
Abstract: Gallium nitride nanowires (GaN-NWs) are systems of interest for mechanical resonance-based sensors due to their small mass and, in the case of c-axis NWs, high mechanical quality (Q) factors of 10,000–100,000. We report on singly-clamped NW mechanic ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=903757

6. Atomic Ordering Induced Energy Gap Reductions in GaAsSb Epilayers
Topic: Semiconductor Materials
Published: 3/1/2005
Authors: B P Gorman, A G Norman, R Lukic-Zrnic, T D Golding, Anthony Birdwell, Christopher Littler
Abstract: A series of GaAs1-xSbx epilayers (0.51≪x≪0.71) grown by molecular-beam epitaxy on GaAs substrates with surface orientations of (001), (001) -8° toward (111)A, (001) -8° toward (111)B, (115)A, (115)B, (113)A, and (113)B were investigated ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=906288

7. Band Alignment of Metal-Oxide-Semiconductor Structure by Internal Photoemission Spectroscopy and Spectroscopic Ellipsometry
Topic: Semiconductor Materials
Published: 5/28/2010
Authors: Nhan V Nguyen, Oleg A Kirillov, John S Suehle
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907105

8. Band Offsets of Al^d2^O^d3^ / In^d1-x^Ga^dx^As (x = 0.53 and 0.75) and the Effects of Post-Deposition Annealing
Topic: Semiconductor Materials
Published: 2/2/2010
Authors: Nhan V Nguyen, Min Xu, Oleg A Kirillov, Pei D Ye, C Wang, Kin P Cheung, John S Suehle
Abstract: Band offsets at the interfaces of InxGa1-xAs / Al2O3 / Al where x = 0.53 and x = 0.75 were determined by internal photoemission and spectroscopic ellipsometry. The photoemission energy threshold at the InxGa1-xAs / Al2O3 interface was found to be in ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=903535

9. Bone Imaging: Bone Mineral Density as a Biomarker for Assessing Bone Health
Topic: Semiconductor Materials
Published: 10/6/2009
Author: Herbert S Bennett
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905380

10. Challenges and Opportunities of Organic Electronics
Topic: Semiconductor Materials
Published: 4/2/2010
Author: Calvin Chan
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905387