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Topic Area: Semiconductor Materials
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Displaying records 61 to 70 of 75 records.
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61. Line Width Roughness and Cross Sectional Measurements of Sub-50 nm Structures with CD-SAXS and CD-SEM
Topic: Semiconductor Materials
Published: 3/24/2008
Authors: Chengqing C. Wang, Ronald Leland Jones, Kwang-Woo Choi, Christopher L Soles, Eric K Lin, Wen-Li Wu, James S Clarke, John S Villarrubia, Benjamin Bunday
Abstract: Critical dimension small angle x-ray scattering (CD-SAXS) is a measurement platform which is capable of measuring the average cross section and sidewall roughness in patterns ranging from (10 to 500) nm in pitch with sub nm precision. These capabili ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=853580

62. High Sensitivity FTIR-ATR Study of Ultra-Thin Zr02 Films: A Study of Phase Change
Topic: Semiconductor Materials
Published: 2/12/2008
Authors: Safak Sayan, Deane Chandler-Horowitz, Nhan V Nguyen, James R. Ehrstein, Mark Croft
Abstract: Fourier Transform Infrared spectroscopy (FTIR) using the Attenuated Total Reflection (ATR) method was performed in the mid-IR spectral region on ultrathin ZrO2 films deposited on silicon wafers. A vibrational mode near 710 cm-1 was observed that unde ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32303

63. Raman Spectroscopic Determination of Hole Concentration in p-Type GaSb
Topic: Semiconductor Materials
Published: 1/2/2008
Authors: James E Maslar, Wilbur S. Hurst, C Wang
Abstract: Room temperature p-type GaSb bulk coupled mode spectra were measured as a function hole concentration. These spectra were obtained using an optical system based on 752.55 nm excitation in order to obtain more sensitivity to bulk GaSb coupled mode sc ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=830981

64. Metrology, Nanocharacterization and Instrumentation for Emerging Nanotechnology and Nanoelectronics: Electrical and Optical Characterization
Topic: Semiconductor Materials
Published: 12/9/2007
Author: David G Seiler
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32866

65. Raman Spectroscopy of n-Type and p-Type GaSb with Multiple Excitation Wavelengths
Topic: Semiconductor Materials
Published: 10/1/2007
Authors: James E Maslar, Wilbur S. Hurst, C Wang
Abstract: The interpretation of Raman spectra of GaSb can be complicated by the presence of a so-called surface space-charge region (SSCR), resulting in an inhomogeneous near-surface Raman scattering environment. To fully interpret Raman spectra, it is i ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=902678

66. Structure Characterization of Nanoporous Interlevel Dielectric Thin Films With X-Ray and Neutron Radiation
Topic: Semiconductor Materials
Published: 3/6/2007
Authors: Christopher L Soles, Hae-Jeong Lee, B D. Vogt, Eric K Lin, Wen-Li Wu
Abstract: The structure characterization of nanoporous interlevel dielectric (ILD) thin films is challenging because of the small sample volumes and nanometer dimensions of the pores. In this chapter, we review characterization methods for porous ILD material ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=852526

67. Mechanically Robust Spin-On Organosilicates Glasses for Nanoporous Applications
Topic: Semiconductor Materials
Published: 2/7/2007
Authors: Hyun W. Ro, K Char, Eun-Chae Jeon, H C Kim, Dongil Kwon, Hae-Jeong Lee, J. H. Lee, Hee-Woo Rhee, Christopher L Soles, Do Y. Yoon
Abstract: An increasing number of technologies demand nanoporous materials with vastly improved physical, mechanical and thermal properties. This manuscript develops the microstructural basis for synthesizing organosilicate glasses (OSGs) with unprecedented ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=852621

68. Atomic Ordering Induced Energy Gap Reductions in GaAsSb Epilayers
Topic: Semiconductor Materials
Published: 3/1/2005
Authors: B P Gorman, A G Norman, R Lukic-Zrnic, T D Golding, Anthony Birdwell, Christopher Littler
Abstract: A series of GaAs1-xSbx epilayers (0.51≪x≪0.71) grown by molecular-beam epitaxy on GaAs substrates with surface orientations of (001), (001) -8° toward (111)A, (001) -8° toward (111)B, (115)A, (115)B, (113)A, and (113)B were investigated ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=906288

69. Molecular Beam Epitaxial Growth and Characterization of Cd-Based II-VI Wide-Bandgap Compounds on Si Substrates
Topic: Semiconductor Materials
Published: 1/3/2005
Authors: G Brill, Y Chen, Paul M. Amirtharaj, W Sarney, N. K. Dhar, Deane Chandler-Horowitz
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=906311

70. Semiconductor Nanocrystal Probes for Human Metaphase Chromosomes
Topic: Semiconductor Materials
Published: 2/1/2004
Authors: Yan Xiao, Peter E. Dr. Barker
Abstract: Novel inorganic fluorophores called semiconductor nanocrystals have recently been incorporated into protein, antibody and microbead oligonucleotide detection methods where previously, organic dyes were universally employed. To improve quantitation o ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=830407



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