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Topic Area: Semiconductor Materials
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Displaying records 61 to 70 of 79 records.
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61. Wear-out and Time Dependent Dielectric Breakdown in Silicon Oxides
Topic: Semiconductor Materials
Published: 1/14/2009
Author: John S Suehle
Abstract: This chapter will discuss the various physical mechanisms proposed for defect generation and dielectric breakdown in thin silicon dioxide films. Current understanding of the driving forces for defect generation will be presented as well as statistica ...

62. Raman Spectroscopic Determination of Electron Concentration in n-Type GaSb
Topic: Semiconductor Materials
Published: 11/19/2008
Authors: James E Maslar, Wilbur Scott Hurst, C Wang
Abstract: Phonon-plasmon coupled mode Raman spectra of n-type GaSb were measured at room temperature as a function of electron concentration. These spectra were obtained using an optical system based on 752.55 nm excitation. Utilization of this wavelength pe ...

63. Papers Selected from the International Semiconductor Device Research Symposium 2007 ISDRS 2007 Foreword
Topic: Semiconductor Materials
Published: 10/1/2008
Authors: A. Iliadis, Curt A Richter

64. Nanoimprint Lithography for the Direct Patterning of Nanoporous Interlayer Dielectric Insulator Materials
Topic: Semiconductor Materials
Published: 3/28/2008
Authors: Hyun W. Ro, Hae-Jeong Lee, Eric K Lin, Alamgir Karim, Daniel R. Hines, Do Y. Yoon, Christopher L Soles
Abstract: Directly patterning dielectric insulator materials for semiconductor devices via nanoimprint lithography has the potential to simplify fabrication processes and reduce manufacturing costs. However, the prospect of mechanically forming these material ...

65. Line Width Roughness and Cross Sectional Measurements of Sub-50 nm Structures with CD-SAXS and CD-SEM
Topic: Semiconductor Materials
Published: 3/24/2008
Authors: Chengqing C. Wang, Ronald Leland Jones, Kwang-Woo Choi, Christopher L Soles, Eric K Lin, Wen-Li Wu, James S Clarke, John S Villarrubia, Benjamin Bunday
Abstract: Critical dimension small angle x-ray scattering (CD-SAXS) is a measurement platform which is capable of measuring the average cross section and sidewall roughness in patterns ranging from (10 to 500) nm in pitch with sub nm precision. These capabili ...

66. High Sensitivity FTIR-ATR Study of Ultra-Thin Zr02 Films: A Study of Phase Change
Topic: Semiconductor Materials
Published: 2/12/2008
Authors: Safak Sayan, Deane Chandler-Horowitz, Nhan V Nguyen, James R. Ehrstein, Mark Croft
Abstract: Fourier Transform Infrared spectroscopy (FTIR) using the Attenuated Total Reflection (ATR) method was performed in the mid-IR spectral region on ultrathin ZrO2 films deposited on silicon wafers. A vibrational mode near 710 cm-1 was observed that unde ...

67. Raman Spectroscopic Determination of Hole Concentration in p-Type GaSb
Topic: Semiconductor Materials
Published: 1/2/2008
Authors: James E Maslar, Wilbur Scott Hurst, C Wang
Abstract: Room temperature p-type GaSb bulk coupled mode spectra were measured as a function hole concentration. These spectra were obtained using an optical system based on 752.55 nm excitation in order to obtain more sensitivity to bulk GaSb coupled mode sc ...

68. Metrology, Nanocharacterization and Instrumentation for Emerging Nanotechnology and Nanoelectronics: Electrical and Optical Characterization
Topic: Semiconductor Materials
Published: 12/9/2007
Author: David G Seiler

69. Raman Spectroscopy of n-Type and p-Type GaSb with Multiple Excitation Wavelengths
Topic: Semiconductor Materials
Published: 10/1/2007
Authors: James E Maslar, Wilbur Scott Hurst, C Wang
Abstract: The interpretation of Raman spectra of GaSb can be complicated by the presence of a so-called surface space-charge region (SSCR), resulting in an inhomogeneous near-surface Raman scattering environment. To fully interpret Raman spectra, it is i ...

70. Structure Characterization of Nanoporous Interlevel Dielectric Thin Films With X-Ray and Neutron Radiation
Topic: Semiconductor Materials
Published: 3/6/2007
Authors: Christopher L Soles, Hae-Jeong Lee, B D. Vogt, Eric K Lin, Wen-Li Wu
Abstract: The structure characterization of nanoporous interlevel dielectric (ILD) thin films is challenging because of the small sample volumes and nanometer dimensions of the pores. In this chapter, we review characterization methods for porous ILD material ...

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