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You searched on: Topic Area: Semiconductor Materials Sorted by: date

Displaying records 41 to 48.
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41. Noise in ZnO Nanowire Field Effect Transistors
Topic: Semiconductor Materials
Published: 2/5/2009
Authors: Hao Xiong, Wenyong Wang, John S Suehle, Curt A Richter, W. Hong, T. Lee
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=904093

42. High Sensitivity FTIR-ATR Study of Ultra-Thin Zr02 Films: A Study of Phase Change
Topic: Semiconductor Materials
Published: 2/12/2008
Authors: Safak Sayan, Deane Chandler-Horowitz, Nhan V Nguyen, James R. Ehrstein, Mark Croft
Abstract: Fourier Transform Infrared spectroscopy (FTIR) using the Attenuated Total Reflection (ATR) method was performed in the mid-IR spectral region on ultrathin ZrO2 films deposited on silicon wafers. A vibrational mode near 710 cm-1 was observed that unde ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32303

43. Terahertz Mobility Measurements on P3HT Films: Device Comparison, Molecular Weight and Film Processing Effects
Topic: Semiconductor Materials
Published: 1/17/2008
Authors: Okan Esenturk, Joseph S Melinger
Abstract: We report the first direct comparison of relative carrier mobilities in semiconducting organic polymer films measured using non-contact optical pump terahertz probe spectroscopy to those reported in electrical device studies. Relative transient sign ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=841108

44. Raman Spectroscopy of n-Type and p-Type GaSb with Multiple Excitation Wavelengths
Topic: Semiconductor Materials
Published: 10/1/2007
Authors: James E Maslar, Wilbur Scott Hurst, C Wang
Abstract: The interpretation of Raman spectra of GaSb can be complicated by the presence of a so-called surface space-charge region (SSCR), resulting in an inhomogeneous near-surface Raman scattering environment. To fully interpret Raman spectra, it is i ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=902678

45. Structure Characterization of Nanoporous Interlevel Dielectric Thin Films With X-Ray and Neutron Radiation
Topic: Semiconductor Materials
Published: 3/6/2007
Authors: Christopher L Soles, Hae-Jeong Lee, B D. Vogt, Eric K Lin, Wen-Li Wu
Abstract: The structure characterization of nanoporous interlevel dielectric (ILD) thin films is challenging because of the small sample volumes and nanometer dimensions of the pores. In this chapter, we review characterization methods for porous ILD material ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=852526

46. Semiconductor Nanocrystal Probes for Human Metaphase Chromosomes
Topic: Semiconductor Materials
Published: 2/1/2004
Authors: Yan Xiao, Peter E. Dr. Barker
Abstract: Novel inorganic fluorophores called semiconductor nanocrystals have recently been incorporated into protein, antibody and microbead oligonucleotide detection methods where previously, organic dyes were universally employed. To improve quantitation o ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=830407

47. Optimizing Residual Gas Analyzers for Process Monitoring
Topic: Semiconductor Materials
Published: 12/1/1997
Author: C R Tilford
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=100330

48. NIST High Resolution X-Ray Diffraction Standard Reference Material: SRM 2000
Topic: Semiconductor Materials
Published: Date unknown
Authors: Donald A Windover, David L. Gil, Albert Henins, James P Cline
Abstract: NIST recently released a standard reference material (SRM) for the calibration of high resolution X-ray diffraction (HRXRD) instruments. HRXRD is extensively used in the characterization of lattice distortion in thin single, epitaxial crystal layer ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=902585



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