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Topic Area: Semiconductor Materials
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Displaying records 41 to 50 of 75 records.
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41. Organic Electronics: Challenges and Opportunities
Topic: Semiconductor Materials
Published: 3/31/2010
Author: Calvin Chan
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905389

42. High performance airbrushed organic thin film transistors
Topic: Semiconductor Materials
Published: 3/30/2010
Authors: Calvin Chan, Lee J Richter, Brad Anthony Dinardo, Cherno Jaye, Brad Conrad, Hyun W. Ro, David Germack, Daniel A Fischer, Dean M DeLongchamp, David J Gundlach
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=904576

43. Electrical and structural characterization of high performance airbrushed organic thin film transistors
Topic: Semiconductor Materials
Published: 3/18/2010
Authors: Calvin Chan, Lee J Richter, Cherno Jaye, Brad Conrad, Hyun W. Ro, David Germack, Daniel A Fischer, Dean M DeLongchamp, David J Gundlach
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905344

44. Band Offsets of Al^d2^O^d3^ / In^d1-x^Ga^dx^As (x = 0.53 and 0.75) and the Effects of Post-Deposition Annealing
Topic: Semiconductor Materials
Published: 2/2/2010
Authors: Nhan V Nguyen, Min Xu, Oleg A Kirillov, Pei D Ye, C Wang, Kin P Cheung, John S Suehle
Abstract: Band offsets at the interfaces of InxGa1-xAs / Al2O3 / Al where x = 0.53 and x = 0.75 were determined by internal photoemission and spectroscopic ellipsometry. The photoemission energy threshold at the InxGa1-xAs / Al2O3 interface was found to be in ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=903535

45. Spray Deposited Poly-3-hexylthiophene Thin Film Transistors
Topic: Semiconductor Materials
Published: 12/11/2009
Authors: Calvin Chan, Lee J Richter, David Germack, Brad Conrad, Daniel A Fischer, Dean M DeLongchamp, David J Gundlach
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905385

46. A Method to Assist in Establishing Consensus-Based Priorities for USNC TAG to IEC TC 113 Activities
Topic: Semiconductor Materials
Published: 11/30/2009
Author: Herbert S Bennett
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905379

47. Electrical Conductivity and Relaxation in Poly(3-hexylthiophene)
Topic: Semiconductor Materials
Published: 11/25/2009
Authors: Jan Obrzut, Kirt Anthony Page
Abstract: ABSTRACT: We studied the complex conductivity of regio-regular poly(3-hexylthiophene) (P3HT) in the temperature range between 193K to 333 K (-80 C to 60 C) and in the frequency range from the direct current (DC) to 12 GHz. The identified relaxation ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=904103

48. Enhanced Mass Transport in Ultra-Rapidly-Heated Ni/Si Thin-Film Multilayers
Topic: Semiconductor Materials
Published: 11/15/2009
Authors: Lawrence P. Cook, Richard E Cavicchi, Nabil Bassim, Susie Eustis, Winnie K Wong-Ng, Igor Levin, Ursula R Kattner, Carelyn E Campbell, Christopher B Montgomery, William F. Egelhoff Jr., Mark D Vaudin
Abstract: We have investigated multilayer and bilayer Ni/Si thin films by nano-differential scanning calorimetry (DSC) at ultra rapid scan rates, in a temperature-time regime not accessible with conventional apparatus. DSC experiments were completed at slower ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=900235

49. Measurement of heat capacity and enthalpy of formation of Nickel Silicide using Nano-calorimetry
Topic: Semiconductor Materials
Published: 11/2/2009
Authors: Ravi Kummamuru, Lito De La Rama, Liang Hu, Mark D Vaudin, Mikhail Efremov, Martin L Green, David A LaVan, Leslie Allen
Abstract: We present characterization of energetics of the reaction between nickel and silicon thin films using differential scanning nano-calorimetry (nano-DSC). For the first time, nano-DSC measurements up to 850 °C and of enthalpy of thin film reactions hav ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=902298

50. A Fast, Simple Wafer-level Hall-Mobility Measurement Technique
Topic: Semiconductor Materials
Published: 10/21/2009
Authors: Liangchun Yu, Kin P Cheung, Vinayak Tilak, Greg Dunne, Kevin Matocha, Jason P Campbell, Kuang Sheng
Abstract: Mobility is a good indicator of device reliability. High channel mobility is one of the biggest challenges especially in novel devices such as high-k based MOSFET, III-V devices and SiC power MOSFET etc. Accurate measurement of channel mobility is ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905424



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