Publications Portal

You searched on:
Topic Area: Semiconductor Materials
Sorted by: date

Displaying records 1 to 10 of 61 records.
Resort by: Date / Title

1. X-Ray Micro-Beam Diffraction Determination of Full Stress Tensors in Cu TSVs
Topic: Semiconductor Materials
Published: 5/28/2013
Authors: Chukwudi Azubuike Okoro, Lyle E Levine, Oleg A Kirillov, Yaw S Obeng, Ruqing Xu, Jonathan Z Tischler, Wenjun Liu, Klaus Hummler
Abstract: We report the first non-destructive, depth resolved determination of the full stress tensor in Cu through-silicon vias (TSVs), using synchrotron based micro-beam X-ray diffraction. Two adjacent Cu TSVs were studied; one deliberately capped with SiO2, ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913440

2. Studies of photoconductivity and FET behavior in examining drift mobility, surface depletion, and transient effects in Si-doped GaN nanowires examined in vacuum and air
Topic: Semiconductor Materials
Published: 5/3/2013
Authors: Norman A Sanford, Lawrence H Robins, Paul Timothy Blanchard, K. Soria, B. Klein, Kristine A Bertness, John B Schlager, Aric Warner Sanders
Abstract: Variable intensity photoconductivity (PC) performed under vacuum at 325 nm was used to estimate drift mobility and negative surface charge density sigma for c-axis oriented Si-doped GaN nanowires (NWs). In this approach we assumed that sigma was res ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912467

3. Thermo-Mechanical Characterization of Au–In Transient Liquid Phase Bonding Die-Attach
Topic: Semiconductor Materials
Published: 4/9/2013
Authors: Brian Joseph Grummel, Habib A Mustain, Z. John Shen, Allen R Hefner Jr
Abstract: In next-generation wide-bandgap power electronics, the semiconductor device die-attach is of critical importance, for this transient liquid phase (TLP) bonding is a promising and effective die-attach technique. In this work, the thermal and mechanica ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911241

4. Transient mobility in silicon as seen by a combination of free-carrier absorption and resonance-coupled photoconductive decay
Topic: Semiconductor Materials
Published: 3/12/2013
Authors: Ari David Feldman, John H Lehman, Richard K. Ahrenkiel
Abstract: The combination of the resonance-coupled photoconductive decay (RCPCD) apparatus and a pump-probe free carrier absorption experiment results in a method of viewing transient mobility. RCPCD uses an Nd:YAG laser operating at 1064 nm to pump the p-ty ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911502

5. Super-resolution Optical Measurement of Nanoscale Photoacid Distribution in Lithographic Materials
Topic: Semiconductor Materials
Published: 10/26/2012
Authors: Adam J. Berro, Andrew J. Berglund, Peter T. (Peter T) Carmichael, Jong Seung Kim, James Alexander Liddle
Abstract: Chemically amplified resists are the principal lithographic materials used in the semiconductor industry. The photoacid distribution generated upon exposure and its subsequent evolution during post-exposure bake is one of the most important factors ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=909231

6. Observation of spin-valve effect in Alq3 using a low work function metal
Topic: Semiconductor Materials
Published: 9/7/2012
Authors: Hyuk-Jae Jang, Kurt Pernstich, David J Gundlach, Oana Jurchescu, Curt A Richter
Abstract: We present the observation of magnetoresistance in Co/Ca/Alq3/Ca/NiFe spin-valve devices. Thin Ca layers contacting 150 nm thick Alq3 enable the injection of spin-polarized electrons into Alq3 due to engineering of the band alignment. The devices ex ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911326

7. Vertically Segregated Structure and Properties of small molecule-polymer blend semiconductors for organic thin film transistors
Topic: Semiconductor Materials
Published: 8/27/2012
Authors: Nayool Shin, Dean M DeLongchamp, Jihoon Kang, Regis J Kline, Lee J Richter, Vivek M Prabhu, Balaji Purushothamanc, John E Anthony, Do Y Yoon
Abstract: The phase-segregated structure and the electrical properties of thin film blends of the small-molecule semiconductor fluorinated 5,11-bis(triethylsilylethynyl) anthradithiophene with insulating binder polymers were studied for organic thin film trans ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=906842

8. Microstructure evolution and development of annealed Ni/Au contacts to GaN nanowires
Topic: Semiconductor Materials
Published: 8/21/2012
Authors: Andrew M. Herrero, Paul Timothy Blanchard, Aric Warner Sanders, Matthew David Brubaker, Norman A Sanford, Alexana Roshko, Kristine A Bertness
Abstract: The development of Ni/Au contacts to Mg-doped GaN nanowires (NWs) is examined. Current-voltage (I-V) measurements of these Mg-doped nanowire devices frequently exhibit a strong degradation after annealing in N^d2^/O^d2^. This degradation originates f ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908853

9. Tunnel FET Heterojunction Band Alignment by Internal Photoemission Spectroscopy
Topic: Semiconductor Materials
Published: 3/6/2012
Authors: Qin Zhang, Guangle Zhou, Huili G. Xing, Alan C. Seabaugh, Kun Xu, Sio Hong, Oleg A Kirillov, Curt A Richter, Nhan V Nguyen
Abstract: The electron energy band alignment of a metal-oxide-semiconductor tunnel field-effect transistor (TFET) heterojunction, W/Al2O3/InGaAs/InAs/InP is determined by internal photoemission spectroscopy. At the oxide flat-band condition, the barrier height ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=909643

10. In situ observation of the indentation-induced phase transformation of silicon thin films
Topic: Semiconductor Materials
Published: 3/5/2012
Authors: Yvonne Beatrice Gerbig, Chris A Michaels, Aaron M Forster, Robert Francis Cook
Abstract: Indentation-induced phase transformation processes were studied by in situ Raman microspectroscopy of the deformed contact region of silicon on sapphire samples during contact loading and unloading. During loading, the formation of Si-II and another ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910047