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You searched on: Topic Area: Semiconductor Materials Sorted by: date

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1. In situ observation of the spatial distribution of crystalline phases during pressure-induced transformations of indented silicon thin films
Topic: Semiconductor Materials
Published: 2/14/2015
Authors: Yvonne Beatrice Gerbig, Chris A Michaels, Robert Francis Cook
Abstract: Indentation-induced phase transformation processes were studied by in situ Raman imaging of the deformed contact region of silicon, employing a Raman spectroscopy-enhanced instrumented indentation technique. This is, to our knowledge, the first seque ...

2. Design and test of reliable, high strength, ingressive polycrystalline silicon microgripper arrays
Topic: Semiconductor Materials
Published: 1/2/2015
Authors: Siddharth Hazra, J L Beuth, Grant A Myers, Frank W DelRio, Maarten de Boer
Abstract: We present the design and extensive validation of a micromachined gripper array that enables reliable transmission of forces up to 10 milliNewtons. The gripper is constructed with polycrystalline silicon, a brittle material. Two ingressive snap-a ...

3. Interface Engineering to Control Magnetic Field Effects of Organic-Based Devices by Using a Molecular Self-Assembled Monolayer
Topic: Semiconductor Materials
Published: 6/26/2014
Authors: Hyuk-Jae Jang, Sujitra Jeanie Pookpanratana, Alyssa N. Brigeman, Regis J Kline, James Ian Basham, David J Gundlach, Christina Ann Hacker, Oleg A Kirillov, Oana Jurchescu, Curt A Richter
Abstract: Organic semiconductors hold immense promise for the development of a wide range of innovative devices with their excellent electronic and manufacturing characteristics. Of particular interest are non-magnetic organic semiconductors that show unusual ...

4. Estimates of photoluminescence efficiencies in GaN nanowires at high injection levels from steady- state photoluminescence measurements
Topic: Semiconductor Materials
Published: 3/10/2014
Authors: John B Schlager, Matthew David Brubaker, Kristine A Bertness, Norman A Sanford
Abstract: Photoluminescence (PL) efficiencies were estimated for individual silicon-doped GaN nanowires grown by plasma assisted molecular beam epitaxy (PAMBE). Steady-state PL measurements reveal efficiencies that depend on excitation intensity, temperatu ...

5. Measuring order in regioregular poly(3-hexylthiophene) with solid-state 13C CPMAS NMR
Topic: Semiconductor Materials
Published: 1/10/2014
Authors: Ryan C Nieuwendaal, Chad R Snyder, Dean M DeLongchamp
Abstract: We report on details of molecular packing in high molar mass poly(3-hexylthiophene) (P3HT) by solid-state 13C {1H} cross-polarization magic angle spinning (CPMAS) NMR measurements. The degree of polymer order was estimated for two films of varied dry ...

6. Epitaxial Si encapsulation of highly misfitting SiC quantum dot arrays formed on Si (001)
Topic: Semiconductor Materials
Published: 1/8/2014
Authors: Christopher W. Petz, Dongyue Yang, Alline F Myers, Jeremey Levy, Jerrold Floro
Abstract: This work examines Si overgrowth to encapsulate 3C-SiC quantum dot arrays epitaxially grown on Si substrates. Using transmission electron microscopy we show how the crystalline quality of the Si cap depends on the growth conditions. Overgrowth at 3 ...

7. Degradation of photovoltaic devices at high concentration by space charge limited currents
Topic: Semiconductor Materials
Published: 10/1/2013
Authors: Ari D Feldman, Richard K. Ahrenkiel, John H Lehman
Abstract: High-injection mobility reduction is examined by theory, modeling, and experimental data acquired by resonance coupled photoconductive decay (RCPCD). The ambipolar mobility is shown to reduce to zero when the constituent injection-dependent carr ...

8. X-Ray Micro-Beam Diffraction Determination of Full Stress Tensors in Cu TSVs
Topic: Semiconductor Materials
Published: 5/28/2013
Authors: Chukwudi Azubuike Okoro, Lyle E Levine, Oleg A Kirillov, Yaw S Obeng, Ruqing Xu, Jonathan Z Tischler, Wenjun Liu, Klaus Hummler
Abstract: We report the first non-destructive, depth resolved determination of the full stress tensor in Cu through-silicon vias (TSVs), using synchrotron based micro-beam X-ray diffraction. Two adjacent Cu TSVs were studied; one deliberately capped with SiO2, ...

9. Studies of photoconductivity and FET behavior in examining drift mobility, surface depletion, and transient effects in Si-doped GaN nanowires examined in vacuum and air
Topic: Semiconductor Materials
Published: 5/3/2013
Authors: Norman A Sanford, Lawrence H Robins, Paul Timothy Blanchard, K. Soria, B. Klein, Kristine A Bertness, John B Schlager, Aric Warner Sanders
Abstract: Variable intensity photoconductivity (PC) performed under vacuum at 325 nm was used to estimate drift mobility and negative surface charge density sigma for c-axis oriented Si-doped GaN nanowires (NWs). In this approach we assumed that sigma was res ...

10. Thermo-Mechanical Characterization of Au‹In Transient Liquid Phase Bonding Die-Attach
Topic: Semiconductor Materials
Published: 4/9/2013
Authors: Brian Joseph Grummel, Habib A Mustain, Z. John Shen, Allen R Hefner Jr.
Abstract: In next-generation wide-bandgap power electronics, the semiconductor device die-attach is of critical importance, for this transient liquid phase (TLP) bonding is a promising and effective die-attach technique. In this work, the thermal and mechanica ...

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