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You searched on: Topic Area: Semiconductor Materials Sorted by: date

Displaying records 1 to 10 of 51 records.
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1. Optical Spintronics in Organic-Inorganic Perovskites Photovoltaics
Topic: Semiconductor Materials
Published: 4/25/2016
Authors: Junwen Li, Paul M Haney
Abstract: Organic-inorganic halide CH^d3^NH^d3^PbI^d3^ solar cells have attracted enormous attention in recent years due to their remarkable power conversion efficiency. These materials should exhibit interesting spin-dependent properties as well, owing to th ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=919936

2. In situ observations of Berkovich indentation induced phase transitions in crystalline silicon films
Topic: Semiconductor Materials
Published: 4/19/2016
Authors: Yvonne Beatrice Gerbig, Chris A Michaels, Robert Francis Cook
Abstract: The pressure induced phase transitions of crystalline Si films was studied in situ under a Berkovich probe using the Raman spectroscopy-enhanced instrumented indentation technique. The observations suggested strain and time as important parameters in ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=920074

3. Spontaneous growth of GaN nanowire nuclei on N- and Al-polar AlN: A piezoresponse force microscopy study of crystallographic polarity
Topic: Semiconductor Materials
Published: 3/2/2016
Authors: Matthew David Brubaker, Alexana Roshko, Paul T Blanchard, Todd E Harvey, Norman A Sanford, Kristine A Bertness
Abstract: The polarity of gallium nitride (GaN) nanowire nuclei grown on AlN layers was studied by piezoresponse force microscopy (PFM). N- or Al-polar AlN layers were grown by molecular beam epitaxy (MBE) on Si (111) substrates by use of Al- or N-rich gr ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=919689

4. Pulsed KrF excimer laser dopant activation in nanocrystal silicon in a silicon dioxide matrix
Topic: Semiconductor Materials
Published: 2/22/2016
Authors: Tian Zhang, Brian J Simonds, Keita Nomoto, Binesh Puthen Veettil, Ziyun Lin, Ivan Perez Wurfl, Gavin Conibeer
Abstract: We demonstrate that a pulsed KrF excimer laser (λ=248 nm, τ=22 ns) can be used as a post-furnace annealing method to greatly increase the electrically active doping concentration in nanocrystal silicon (ncSi) embedded in SiO2. The applicati ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=919933

5. Polarity-Controlled GaN/AlN Nucleation Layers for Selective-Area Growth of GaN Nanowire Arrays on Si(111) Substrates by Molecular Beam Epitaxy
Topic: Semiconductor Materials
Published: 12/18/2015
Authors: Matthew David Brubaker, Shannon M.M. Duff, Todd E Harvey, Paul T Blanchard, Alexana Roshko, Aric Warner Sanders, Norman A Sanford, Kristine A Bertness
Abstract: We have demonstrated dramatic improvement in the quality of selective-area GaN nanowire growth by controlling the polarity of the underlying nucleation layers. In particular, we find that N- polarity is beneficial for the growth of large ordered n ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=917880

6. Modifying spin injection characteristics in the Co/Alq3 system by using a molecular self-assembled monolayer
Topic: Semiconductor Materials
Published: 5/19/2015
Authors: Hyuk-Jae Jang, Jun-Sik Lee, Sujitra Jeanie Pookpanratana, Ich C. Tran, Curt A Richter, Christina Ann Hacker
Abstract: We present the results of experiments that explore the influence of molecular self-assembled monolayers (SAMs) on characteristics of spin injection into an organic semiconductor, Alq3 [tris-(8-hydroxyquinoline) aluminum] from a ferromagnetic metal, C ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=917614

7. In situ observation of the spatial distribution of crystalline phases during pressure-induced transformations of indented silicon thin films
Topic: Semiconductor Materials
Published: 2/14/2015
Authors: Yvonne Beatrice Gerbig, Chris A Michaels, Robert Francis Cook
Abstract: Indentation-induced phase transformation processes were studied by in situ Raman imaging of the deformed contact region of silicon, employing a Raman spectroscopy-enhanced instrumented indentation technique. This is, to our knowledge, the first seque ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=916253

8. Microwave Near-Field Imaging of Two-Dimensional Semiconductors
Topic: Semiconductor Materials
Published: 1/27/2015
Authors: Samuel Berweger, Joel C Weber, Jimmy J. Li, Jesus M Velazquez, Adam Pieterick, Norman A Sanford, Albert V. Davydov, Thomas M Wallis, Pavel Kabos
Abstract: Optimizing new generations of 2D devices based on van der Waals materials will require techniques capable of measuring variations in electronic properties in situ and with nanometer spatial resolution. We perform scanning microwave microscopy (SMM) ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=917367

9. Design and test of reliable, high strength, ingressive polycrystalline silicon microgripper arrays
Topic: Semiconductor Materials
Published: 1/2/2015
Authors: Siddharth Hazra, J L Beuth, Grant A. Myers, Frank W DelRio, Maarten de Boer
Abstract: We present the design and extensive validation of a micromachined gripper array that enables reliable transmission of forces up to 10 milliNewtons. The gripper is constructed with polycrystalline silicon, a brittle material. Two ingressive snap-a ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=916443

10. Particle-based simulation of nanoscale systems and materials
Topic: Semiconductor Materials
Published: 1/1/2015
Authors: Alexander Y Smolyanitsky, Vinod K Tewary
Abstract: This book chapter is focused on the introduction of molecular dynamics (MD) and molecular statics (MS), as well as some of their uses for studying the thermomechanical and (indirectly) electronic properties at the nanoscale. We first introduce th ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=914989



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