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Topic Area: Semiconductor Materials

Displaying records 71 to 75.
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71. A Comparison of Aluminum Nitride Freely Nucleated and Seeded on 6H-Silicon Carbide
Topic: Semiconductor Materials
Published: 1/1/2000
Authors: J H Edgar, Lawrence H Robins, S E Coatney, L Liu, J Chaudhuri, K Ignatiev, Z J Rek
Abstract: The crystal structure and optical properties of AlN single crystals prepared by the sublimation-recondensation method were analyzed by cathodoluminescence (CL) spectroscopy, Raman spectroscopy, and synchrotron white-beam x-ray topography (SWBXT). Nee ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=850353

72. Optimizing Residual Gas Analyzers for Process Monitoring
Topic: Semiconductor Materials
Published: 12/1/1997
Author: C R Tilford
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=100330

73. Single-Target Magnetron Sputter-Deposition of High-T^dc^ Superconducting Bi-Sr-Ca-Cu-O Thin Films
Topic: Semiconductor Materials
Published: 11/15/1988
Authors: Neelkanth G Dhere, J. P. Goral, A. R. Mason, R. G. Dhere, Ronald H. Ono
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=7493

74. NIST High Resolution X-Ray Diffraction Standard Reference Material: SRM 2000
Topic: Semiconductor Materials
Published: Date unknown
Authors: Donald A Windover, David L. Gil, Albert Henins, James P Cline
Abstract: NIST recently released a standard reference material (SRM) for the calibration of high resolution X-ray diffraction (HRXRD) instruments. HRXRD is extensively used in the characterization of lattice distortion in thin single, epitaxial crystal layer ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=902585

75. Terahertz Mobility Measurements on P3HT Films: Device Comparison, Molecular Weight and Film Processing Effects
Topic: Semiconductor Materials
Published: Date unknown
Authors: Okan Esenturk, Joseph S Melinger
Abstract: We report the first direct comparison of relative carrier mobilities in semiconducting organic polymer films measured using non-contact optical pump terahertz probe spectroscopy to those reported in electrical device studies. Relative transient sign ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=841108



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