NIST logo

Publications Portal

You searched on:
Topic Area: Semiconductor Materials

Displaying records 51 to 60 of 74 records.
Resort by: Date / Title


51. Silicon Nanowire NVM with High-k Gate Dielectric Stack
Topic: Semiconductor Materials
Published: 9/1/2009
Authors: Xiaoxiao Zhu, D. Gu, Qiliang Li, D. Ioannoua, H. Baumgart, John S Suehle, Curt A Richter
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=904090

52. Steep Subthreshold Slope Nanowire FETs with Gate-Induced Schottky-Barrier Tunneling
Topic: Semiconductor Materials
Published: 6/24/2009
Authors: Qiliang Li, Xiaoxiao Zhu, D. Ioannou, John S Suehle, Curt A Richter
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=904092

53. Optical and Conductivity Properties of Films from Liquid-Phase Exfoliation of Natural Graphite
Topic: Semiconductor Materials
Published: 5/15/2009
Authors: Jan Obrzut, Kalman D Migler
Abstract: We experimentally determine the conductivity and optical transmittance of graphite layers, obtained from the liquid phase exfoliation of natural crystalline graphite. The measured transmittance values range from 0.9 to 0.97, comparable to the theoret ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=901494

54. The molecular basis of mesophase ordering in a thiophene-based copolymer
Topic: Semiconductor Materials
Published: 2/18/2009
Authors: Dean M DeLongchamp, Regis J Kline, Youngsuk Jung, Eric K Lin, Daniel A Fischer, David J Gundlach, Andrew Moad, Lee J Richter, Michael F. Toney, Martin Heeney, Iain McCulloch
Abstract: The carrier mobility of poly(2,5-bis(3-alkylthiophen-2-yl) thieno[3,2-b]thiophene) semiconductors can be substantially enhanced after heating through a thermotropic mesophase transition, which causes a significant improvement in thin film structural ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=852781

55. Noise in ZnO Nanowire Field Effect Transistors
Topic: Semiconductor Materials
Published: 2/5/2009
Authors: Hao Xiong, Wenyong Wang, John S Suehle, Curt A Richter, W. Hong, T. Lee
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=904093

56. Wear-out and Time Dependent Dielectric Breakdown in Silicon Oxides
Topic: Semiconductor Materials
Published: 1/14/2009
Author: John S Suehle
Abstract: This chapter will discuss the various physical mechanisms proposed for defect generation and dielectric breakdown in thin silicon dioxide films. Current understanding of the driving forces for defect generation will be presented as well as statistica ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32796

57. Raman Spectroscopic Determination of Electron Concentration in n-Type GaSb
Topic: Semiconductor Materials
Published: 11/19/2008
Authors: James E Maslar, Wilbur S. Hurst, C Wang
Abstract: Phonon-plasmon coupled mode Raman spectra of n-type GaSb were measured at room temperature as a function of electron concentration. These spectra were obtained using an optical system based on 752.55 nm excitation. Utilization of this wavelength pe ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=831013

58. Papers Selected from the International Semiconductor Device Research Symposium 2007 ISDRS 2007 Foreword
Topic: Semiconductor Materials
Published: 10/1/2008
Authors: A. Iliadis, Curt A Richter
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=904091

59. Nanoimprint Lithography for the Direct Patterning of Nanoporous Interlayer Dielectric Insulator Materials
Topic: Semiconductor Materials
Published: 3/28/2008
Authors: Hyun W. Ro, Hae-Jeong Lee, Eric K Lin, Alamgir Karim, Daniel R. Hines, Do Y. Yoon, Christopher Soles
Abstract: Directly patterning dielectric insulator materials for semiconductor devices via nanoimprint lithography has the potential to simplify fabrication processes and reduce manufacturing costs. However, the prospect of mechanically forming these material ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=852733

60. Line Width Roughness and Cross Sectional Measurements of Sub-50 nm Structures with CD-SAXS and CD-SEM
Topic: Semiconductor Materials
Published: 3/24/2008
Authors: Chengqing C. Wang, Ronald Leland Jones, Kwang-Woo Choi, Christopher Soles, Eric K Lin, Wen-Li Wu, James S Clarke, John S Villarrubia, Benjamin Bunday
Abstract: Critical dimension small angle x-ray scattering (CD-SAXS) is a measurement platform which is capable of measuring the average cross section and sidewall roughness in patterns ranging from (10 to 500) nm in pitch with sub nm precision. These capabili ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=853580



Search NIST-wide:


(Search abstract and keywords)


Last Name:
First Name:







Special Publications:

Looking for a NIST Special Publication (NIST SP Series)? Place the series number and dash in the report number field (Example: 800-) and begin your search.

  • SP 250-XX: Calibration Services
  • SP 260-XX: Standard Reference Materials
  • SP 300-XX: Precision Measurement and Calibration
  • SP 400-XX: Semiconductor Measurement Technology
  • SP 480-XX: Law Enforcement Technology
  • SP 500-XX: Computer Systems Technology
  • SP 700-XX: Industrial Measurement Series
  • SP 800-XX: Computer Security Series
  • SP 823-XX: Integrated Services Digital Network Series