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You searched on: Topic Area: Semiconductor Materials

Displaying records 21 to 30 of 42 records.
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21. Effect of AlN Buffer Layer Properties on the Morphology and Polarity of GaN Nanowires Grown by Molecular Beam Epitaxy
Topic: Semiconductor Materials
Published: 9/8/2011
Authors: Matthew David Brubaker, Kristine A Bertness, Norman A Sanford, Albert Davydov, Igor Levin, Devin M. Rourke, Victor M. Bright
Abstract: Low temperature AlN buffer layers grown by plasma-assisted Molecular Beam Epitaxy (MBE) on Si (111) were found to significantly affect the subsequent growth morphology of GaN nanowires. The AlN buffer layers exhibited nanowire-like columnar protrusi ...

22. A new interface defect spectroscopy method
Topic: Semiconductor Materials
Published: 4/13/2011
Authors: Jason T Ryan, Liangchun (Liangchun) Yu, Jae Han, Joseph J Kopanski, Kin P Cheung, Jason P Campbell, Fei Zhang, Chen Wang, John S Suehle, Vinny Tilak, Jody Fronheiser

23. Analysis of high-Q, gallium nitride nanowire resonators in response to deposited thin films
Topic: Semiconductor Materials
Published: 1/1/2011
Authors: J. R. Montague, M. Dalberth, J. M. Gray, D. Seghete, Kristine A Bertness, S M George, Victor M. Bright, C. T. Rogers, Norman A Sanford
Abstract: Gallium nitride nanowires (GaN-NWs) are systems of interest for mechanical resonance-based sensors due to their small mass and, in the case of c-axis NWs, high mechanical quality (Q) factors of 10,000‹100,000. We report on singly-clamped NW mechanic ...

24. Zone-Refinement Effect in Small Molecule‹Polymer Blend Semiconductors for Organic Thin Film Transistors
Topic: Semiconductor Materials
Published: 12/14/2010
Authors: Yeon Sook Chung, Nayool Shin, Jihoon Kang, Youngeun Jo, Vivek M Prabhu, Regis J Kline, John E Anthony, Do Y Yoon
Abstract: The blend films of small molecule semiconductors with insulating polymers exhibit not only an excellent solution processability, but also superior performance characteristics (field-effect mobility, on/off ratio, threshold voltage and stability) over ...

25. Band Alignment of Metal-Oxide-Semiconductor Structure by Internal Photoemission Spectroscopy and Spectroscopic Ellipsometry
Topic: Semiconductor Materials
Published: 5/28/2010
Authors: Nhan V Nguyen, Oleg A Kirillov, John S Suehle

26. Measuring the extent of phase separation in P3HT/PCBM photovoltaic blends with 1H spin diffusion NMR spectroscopy
Topic: Semiconductor Materials
Published: 4/5/2010
Authors: Ryan C Nieuwendaal, Chad R Snyder, Regis J Kline, Eric K Lin, David Lloyd VanderHart, Dean M DeLongchamp

27. Challenges and Opportunities of Organic Electronics
Topic: Semiconductor Materials
Published: 4/2/2010
Author: Calvin Chan

28. Organic Electronics: Challenges and Opportunities
Topic: Semiconductor Materials
Published: 3/31/2010
Author: Calvin Chan

29. Electrical and structural characterization of high performance airbrushed organic thin film transistors
Topic: Semiconductor Materials
Published: 3/18/2010
Authors: Calvin Chan, Lee J Richter, Cherno Jaye, Brad Conrad, Hyun Wook Ro, David Germack, Daniel A Fischer, Dean M DeLongchamp, David J Gundlach

30. Band Offsets of Al^d2^O^d3^ / In^d1-x^Ga^dx^As (x = 0.53 and 0.75) and the Effects of Post-Deposition Annealing
Topic: Semiconductor Materials
Published: 2/2/2010
Authors: Nhan V Nguyen, Min Xu, Oleg A Kirillov, Pei D Ye, C Wang, Kin P Cheung, John S Suehle
Abstract: Band offsets at the interfaces of InxGa1-xAs / Al2O3 / Al where x = 0.53 and x = 0.75 were determined by internal photoemission and spectroscopic ellipsometry. The photoemission energy threshold at the InxGa1-xAs / Al2O3 interface was found to be in ...

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