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961. Near-Field Intensity Correlations in Semicontinuous Metal-Dielectric Films
Topic: Ceramics
Published: Date unknown
Authors: K Seal, A K Sarychev, H Noh, D A Genov, A Yamilov, Vladimir Shalaev, Z C. Ying, H Cao
Abstract: Spatial intensity correlation functions are obtained from near-field scanning optical microscope measurements of semicontinuous metal-dielectric films. The concentration of metal particles on a dielectric surface is varied over a wide range to contro ...

962. Negative Pressure in Water Capillary Bridges at Nanocontacts
Topic: Ceramics
Published: Date unknown
Authors: Seung Ho Yang, Michael Nosonovsky, Huan Zhang, Koo-Hyun Chung
Abstract: Negative Laplace pressure may develop inside a water capillary bridge formed between two bodies and contribute to the force required to pull them apart. Because of the negative pressure, nanoscale water capillary bridges may not be stable. We show t ...

963. New Correction Procedure for X-Ray Spectroscopic Fluorescence Data: Simulations and Experiments
Topic: Ceramics
Published: Date unknown
Authors: J Ablett, Joseph C Woicik, C C Kao
Abstract: X-ray fluorescence spectroscopy is a widely used method for determining the electronic configuration and local structure of dilute species with high sensitivity. In the dilute limit, and for thin films, the x-ray fluorescence signal is directly prop ...

964. New Synchrotron X-Ray Techniques for In-Situ Deformation Studies
Topic: Ceramics
Published: Date unknown
Authors: Lyle E Levine, R Thomson, Gabrielle Gibbs Long, David R Black
Abstract: Many types of defects contribute to local and long-range stresses and strains in materials. These include vacancies, voids, prismatic loops, interstitials, inclusions, and dislocations. In most cases, dislocations play the dominant role in minimizing ...

965. NiO: A Charge Transfer or Mott-Hubbard Insulator
Topic: Ceramics
Published: Date unknown
Authors: T M Schuler, D L Ederer, S Itza-Ortiz, G T Woods, T A Callcott, Joseph C Woicik
Abstract: Using site-specific soft x-ray emission and absoroption spectroscopy in conjunction with site-specific x-ray photoelectron spectroscopy, we measure the magnitude of the insulating band gap of NiO to be approximately 2.0 eV, comparable to that predict ...

966. Nuclear Magnetic Resonance and X-Ray Absorption Spectroscopic Studies of Lithium Insertion in Silver Vanadium Oxide Cathodes
Topic: Ceramics
Published: Date unknown
Authors: N D Leifer, A Colon, K Martocci, S G Greenbaum, Faisal Alamgir, T B Reddy, N R Gleason, R A Leising, E S Takeuchi
Abstract: Structural studies have been carried out on Ag2V4O11 (silver vanadium oxide, SVO) and LixAg2V4O11, lithiated SVO with x = 0.72, 2.13 and 5.59 using Nuclear Magnetic Resonance (NMR) and X-ray Absorption Spectroscopy (XAS). Lithium-7 NMR indicates the ...

967. Numerical Simulations of the Growth and Deflection of a Stress-Corrosion Crack on the Interface Between Two Brittle Solids
Topic: Ceramics
Published: Date unknown
Authors: Z Tang, A F Bower, Tze J Chuang
Abstract: A front-tracking finite element method is used to compute the evolution of a crack-like defect that propagates along a bi-material interface by stress driven corrosion. Depending on material properties, loading, and temperature, simulations predict ...

968. On the Average Charge of the Oxygen Vacancy in Perovskites Necessary for Kinetic Calculations
Topic: Ceramics
Published: Date unknown
Author: S A Prosandeev
Abstract: An analytical result has been obtained for the value of the dynamical charge necessary for calculations of oxygen vacancy kinetics in dielectric perovskite-type crystals. It is shown by using the Berry phase analysis that this charge equals the nomi ...

969. Optical and Structural Studies of Strain-Relaxed InxGa1-xN Films on GaN/sapphire with 0.04
Topic: Ceramics
Published: Date unknown
Authors: Lawrence H Robins, J T. Armstrong, Mark D Vaudin, Charles E. Bouldin, Joseph C Woicik, Albert J. Paul, W. Robert Thurber, Ryna B. Marinenko
Abstract: The structures of a set of InxGa1-xN films grown by atmospheric-pressure MOCVD onGaN buffer layers on c-plane sapphire, with compositions in the range 0.04 < x < 0.47, were characterized by x-ray diffraction (XRD). Several films were also examined by

970. Optical and Structural Study of GaN Nanowires Grown by Catalyst Free MBE: (I) Near Band Edge Luminescence and Strain Effects
Topic: Ceramics
Published: Date unknown
Authors: Lawrence H Robins, Kristine A Bertness, John Barker, Norman A Sanford, John B. Schlager
Abstract: GaN nanowires with diameters of 50 nm to 250 nm, grown by catalyst free molecular beam epitaxy, were characterized by photoluminescence (PL) and cathodoluminescence (CL) spectroscopy at temperatures from 3 K to 295 K. Both as grown samples, which co ...

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