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Topic Area: Nanomanufacturing
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Displaying records 51 to 60 of 80 records.
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51. Nanofabrication of a two-dimensional array using laser-focused atomic deposition
Topic: Nanomanufacturing
Published: 6/27/1995
Authors: R Gupta, Robert Celotta, Zeina Jabbour Kubarych, J Mcclelland
Abstract: Fabrication of a two-dimensional array of nanometer-scale chromium features on a silicon substrate by laser-focused atomic deposition is described. Features 13? 1 nm high and having a full-width at half maximum of 80? 10 nm are fabricated in a square ...

52. Nanometrology Solutions Using an Ultra-High Resolution In-lens SEM
Topic: Nanomanufacturing
Published: 9/1/2009
Authors: Michael T Postek, Andras Vladar, John S Villarrubia
Abstract: The imaging and measurement of nanostructures such as particles, carbon nanotubes, and quantum dots have placed new demands on the high resolution imaging capabilities of scanning electron microscopes. A barrier to accurate dimensional metrology is t ...

53. New Method for the Measurement of SEM Stage Vibrations
Topic: Nanomanufacturing
Published: 2/1/2004
Authors: Bradley N Damazo, Crossley E Jayewardene, Andras Vladar, William J. Keery, Michael T Postek

54. Noncontact measurement of charge carrier lifetime and mobility in GaN nanowires
Topic: Nanomanufacturing
Published: 8/27/2012
Authors: Christopher M. Dodson, Patrick Parkinson, Kristine A Bertness, Hannah J Joyce, Laura M Herz, Norman A Sanford, Michael B Johnston
Abstract: The first noncontact photoconductivity measurements of gallium nitride nanowires (NWs) are presented, revealing a high crystallographic and optoelectronic quality achieved by use of catalyst-free molecular beam epitaxy. In comparison with bulk ma ...

55. O2 A-band line parameters to support atmospheric remote sensing. Part II: The rare isotopologues
Topic: Nanomanufacturing
Published: 7/21/2011
Authors: Joseph Terence Hodges, David A Long, Daniel K Havey, S. S. Yu, M Okumura, Charles E Miller
Abstract: Frequency-stabilized cavity ring-down spectroscopy (FS-CRDS) was employed to measure over 100 transitions in the R-branch of the b1Σg+←X3Σg-(0,0) band for the rare O2 isotopologues. The use of 17O- and 18O-enriched mixtures allowed fo ...

Topic: Nanomanufacturing
Published: 10/19/2008
Authors: Jun-Feng Song, Li Ma, Theodore Vincent Vorburger, Susan M Ballou
Abstract: In the ballistics measurements and correlations, optimum selection of c has particular importance for an unambiguous extraction of Individual Characteristics from the Class Characteristics . Poorly selected c might result in the Class Character ...

57. On CD-AFM bias related to probe bending
Topic: Nanomanufacturing
Published: 4/9/2012
Authors: Vladimir A Ukraintsev, Ndubuisi George Orji, Theodore Vincent Vorburger, Ronald G Dixson, Joseph Fu, Richard M Silver
Abstract: Critical Dimension AFM (CD-AFM) is a widely used reference metrology. To characterize modern semiconductor devices, very small and flexible probes, often 15 nm to 20 nm in diameter, are now frequently used. Several recent publications have reported ...

58. Optical Flatness Metrology for 300 mm Silicon Wafers
Topic: Nanomanufacturing
Published: 4/1/2005
Authors: Ulf Griesmann, Quandou Wang, T D Raymond
Abstract: At the National Institute of Standards and Technology (NIST), we are developing two interferometric methods for measuring the thickness variation and flatness of free-standing and chucked silicon wafers with diameters up to 300mm. The eXtremely accu ...

59. Optical Through-Focus Technique that Differentiates Small Changes in Line Width, Line Height and Sidewall Angle for CD, Overlay, and Defect Metrology Applications
Topic: Nanomanufacturing
Published: 4/16/2008
Authors: Ravikiran Attota, Richard M Silver, Bryan M Barnes
Abstract: We present a new optical technique for dimensional analysis of sub 100 nm sized targets by analyzing through-focus images obtained using a conventional bright-field optical microscope.  We present a method to create through-focus image maps (TFIM) us ...

60. Optimization of Dispersion and Surface Pretreatment for Single GaN Nanowire Devices
Topic: Nanomanufacturing
Published: 9/28/2012
Authors: Norman A Sanford, Kristine A Bertness, Andrew M. Herrero
Abstract: The correlation of residual contamination with void formation at the contact/SiO2 interface for single GaN NW devices was investigated. The morphology at the metal/SiO2 interface was observed by removing the annealed Ni/Au films from the SiO2 with ca ...

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