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You searched on: Topic Area: Nanomanufacturing Sorted by: date

Displaying records 1 to 10 of 45 records.
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1. Towards Understanding Early Failures Behavior during Device Burn-In: Broadband RF Monitoring of Atomistic Changes in Materials
Topic: Nanomanufacturing
Published: 8/18/2016
Authors: Yaw S Obeng, Chukwudi Azubuike Okoro, Papa K. Amoah, Victor H Vartanian
Abstract: In this paper, we attempt to understand the physico-chemical changes that occur in devices during device ,burn-inŠ. We discuss the use of low frequency dielectric spectroscopy to detect, characterize and monitor changes in electrical defects pres ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=920388

2. Intrinsic Conductivity of Carbon Nanotubes and Graphene Sheets Having a Realistic Geometry
Topic: Nanomanufacturing
Published: 11/23/2015
Authors: Luis Fernando Vargas Lara, Ahmed M. Hassan, Edward Joseph Garboczi, Jack F Douglas
Abstract: The addition of carbon nanotubes (CNTs) and graphene sheets (GSs) into polymeric materials such as epoxy resins can greatly enhance the conductivity and alter the electromagnetic response of the resulting nanocomposite material. The extent of thes ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=918785

3. Rapid Prototyping of Nanofluidic Slits in a Silicone Bilayer
Topic: Nanomanufacturing
Published: 11/17/2015
Authors: Thomas Pedicino Kole, Kuo-Tang Liao, Daniel Robert Paul Schiffels, Bojan R Ilic, Elizabeth A Strychalski, Jason G Kralj, James Alexander Liddle, Anatoly Dritschilo, Samuel M Stavis
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=918788

4. Orthogonal Analysis of Functional Gold Nanoparticles for Biomedical Applications
Topic: Nanomanufacturing
Published: 9/11/2015
Authors: De-Hao D. Tsai, Yi-Fu Lu, Frank W DelRio, Tae Joon Cho, Suvajyoti S. Guha, Michael Russel Zachariah, Fan Zhang, Andrew John Allen, Vincent A Hackley
Abstract: We report a comprehensive strategy based on implementation of orthogonal measurement techniques to provide critical and verifiable material characteristics for functionalized gold nanoparticles (AuNPs) used in biomedical applications. Thiolated polye ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=918793

5. Effects of wafer noise on the detection of 20 nm defects using optical volumetric inspection
Topic: Nanomanufacturing
Published: 2/11/2015
Authors: Bryan M Barnes, Francois R. Goasmat, Martin Y Sohn, Hui Zhou, Andras Vladar, Richard M Silver
Abstract: Patterning imperfections in semiconductor device fabrication may either be noncritical [e.g., line edge roughness (LER)] or critical, such as defects that impact manufacturing yield. As the sizes of the pitches and linewidths decrease in lithography, ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=916347

6. Friction imprint effect in mechanically cleaved BaTiO3 (001)
Topic: Nanomanufacturing
Published: 9/28/2014
Authors: Christian J Long, Daniel Ebeling, Santiago D. Solares, Rachel J. Cannara
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=916209

7. Selective Area Growth of Ga- and N-polar GaN Nanowire Arrays on Non-Polar Si (111) Substrates
Topic: Nanomanufacturing
Published: 9/7/2014
Authors: Matthew David Brubaker, Shannon M.M. Duff, Todd E Harvey, Paul T Blanchard, Alexana Roshko, Aric Warner Sanders, Norman A Sanford, Kristine A Bertness
Abstract: This study presents a technique for obtaining Ga- and N-polar Gallium Nitride nanowire (GaN NW) arrays on non-polar Si (111) substrates by use of polarity-controlled AlN/GaN buffer layers. AlN films are demonstrated to adopt Al-/N-polarity for N ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=915866

8. Dielectric characterization by microwave cavity perturbation corrected for non-uniform fields
Topic: Nanomanufacturing
Published: 7/23/2014
Authors: Nathan D Orloff, Jan Obrzut, Christian J Long, Thomas F. Lam, James C Booth, David R Novotny, James Alexander Liddle, Pavel Kabos
Abstract: The non-uniform fields that occur due to the slot in the cavity through which the sample is inserted and those due to the sample geometry itself decrease the accuracy of dielectric characterization by cavity perturbation at microwave frequencies. ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=915011

9. Characterization of InGaN quantum disks in GaN nanowires
Topic: Nanomanufacturing
Published: 2/27/2014
Authors: Alexana Roshko, Roy H. Geiss, John B. Schlager, Matthew David Brubaker, Kristine A Bertness, Norman A Sanford, Todd E Harvey
Abstract: Catalyst-free GaN nanowires with InGaN quantum disks (QDs) were characterized by scanning/transmission electron microscopy (S/TEM) and photoluminescence. A variety of structures, from QDs with large strain fields to apparently strain free QDs wer ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=914924

10. Laser-assisted atom probe tomography of MBE grown GaN nanowire heterostructures
Topic: Nanomanufacturing
Published: 2/24/2014
Authors: Norman A Sanford, Paul T Blanchard, Matthew David Brubaker, Kristine A Bertness, John B. Schlager, R Kirchofer, David R Diercks, Brian Gorman
Abstract: Laser-assisted atom probe tomography (L-APT) was performed on GaN nanowires (NWs) and axial GaN/InGaN nanowire heterostructures. All samples were grown by MBE on Si(111) substrates. The laser pulse energy (PE) at 355 nm used in L-APT analysis of Ga ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=914658



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