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Topic Area: Nanomanufacturing

Displaying records 11 to 20 of 78 records.
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11. FABRICATION AND CHARACTERIZATION OF STANDARDS FOR ATOMIC FORCE MICROSCOPE TIP WIDTH CALIBRATION
Topic: Nanomanufacturing
Published: 3/25/2013
Authors: Ronald G Dixson, Craig Dyer McGray, Boon Ping Ng, Ndubuisi George Orji, Jon C Geist
Abstract: The National Institute of Standards and Technology (NIST) has been developing methods and standards to enable the traceable calibration of critical dimension atomic force microscopy (CD AFM). This technique involves flared tips and two-dimensional s ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912865

12. Quantum Dot Fluorescence Lifetime Engineering with DNA Origami Constructs
Topic: Nanomanufacturing
Published: 1/21/2013
Authors: James Alexander Liddle, Seung-Hyeon Ko, Kan Du
Abstract: The ability to organize nanostructures of disparate types and materials ‹ such as metal nanoparticles and semiconductor quantum dots ‹ is challenging but essential for the creation of novel materials and devices. Metal nanoparticles (NPs) have intere ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911962

13. Preface, Introduction and Chapter 11 to appear in the book Control from MEMS to Atoms
Topic: Nanomanufacturing
Published: 12/31/2012
Authors: Jason John Gorman, Benjamin Shapiro
Abstract: Preface Abstract: This is the preface of the book. No abstract is available. Introduction Abstract: The goal of this book is to show how control systems can be successfully applied to applications in micro- and nanosystems, to explore the wide v ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907965

14. DNA Evolves
Topic: Nanomanufacturing
Published: 12/1/2012
Authors: James Alexander Liddle, Seung-Hyeon Ko
Abstract: None
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912291

15. Optimization of Dispersion and Surface Pretreatment for Single GaN Nanowire Devices
Topic: Nanomanufacturing
Published: 9/28/2012
Authors: Norman A Sanford, Kristine A Bertness, Andrew M. Herrero
Abstract: The correlation of residual contamination with void formation at the contact/SiO2 interface for single GaN NW devices was investigated. The morphology at the metal/SiO2 interface was observed by removing the annealed Ni/Au films from the SiO2 with ca ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911627

16. Noncontact measurement of charge carrier lifetime and mobility in GaN nanowires
Topic: Nanomanufacturing
Published: 8/27/2012
Authors: Christopher M. Dodson, Patrick Parkinson, Kristine A Bertness, Hannah J Joyce, Laura M Herz, Norman A Sanford, Michael B Johnston
Abstract: The first noncontact photoconductivity measurements of gallium nitride nanowires (NWs) are presented, revealing a high crystallographic and optoelectronic quality achieved by use of catalyst-free molecular beam epitaxy. In comparison with bulk ma ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911320

17. Kinematic Modeling and Calibration of a Flexure Based Hexapod Nanopositioner
Topic: Nanomanufacturing
Published: 8/21/2012
Authors: Hongliang Shi, Hai-Jun Su, Nicholas G Dagalakis, John A Kramar
Abstract: This paper covers the kinematic modeling of a flexure-based, hexapod nanopositioner and a new method of calibration for this type of nanopositioner. This six degrees of freedom tri-stage nanopositioner can generate small displacement, high-resolution ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911830

18. Contour Metrology using Critical Dimension Atomic Force Microscopy
Topic: Nanomanufacturing
Published: 4/9/2012
Authors: Ndubuisi George Orji, Ronald G Dixson, Andras Vladar, Bin Ming, Michael T Postek
Abstract: The critical dimension atomic force microscope (CD-AFM), which is used as a reference instrument in lithography metrology, has been proposed as a supplemental instrument for contour measurement and verification. However, although data from CD-AFM is ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910915

19. On CD-AFM bias related to probe bending
Topic: Nanomanufacturing
Published: 4/9/2012
Authors: Vladimir A Ukraintsev, Ndubuisi George Orji, Theodore Vincent Vorburger, Ronald G Dixson, Joseph Fu, Richard M Silver
Abstract: Critical Dimension AFM (CD-AFM) is a widely used reference metrology. To characterize modern semiconductor devices, very small and flexible probes, often 15 nm to 20 nm in diameter, are now frequently used. Several recent publications have reported ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910903

20. Traceable Calibration of a Critical Dimension Atomic Force Microscope
Topic: Nanomanufacturing
Published: 3/9/2012
Authors: Ronald G Dixson, Ndubuisi George Orji, Craig Dyer McGray, John E Bonevich, Jon C Geist
Abstract: The National Institute of Standards and Technology (NIST) has a multifaceted program in atomic force microscope (AFM) dimensional metrology. One component of this program, and the focus of this paper, is the use of critical dimension atomic force ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908943



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