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Topic Area: Semiconductors
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Displaying records 31 to 40 of 135 records.
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31. Development of a Seebeck Coefficient Standard Reference Material
Topic: Semiconductors
Published: 8/7/2009
Authors: Nathan Lowhorn, Winnie K Wong-Ng, John Lu, Evan L. Thomas, Makoto Otani, Martin L Green, Neil Dilley, Jeffrey Sharp, Thanh N. Tran
Abstract: We have successfully developed a Seebeck coefficient Standard Reference Material (SRM ), Bi2Te3, that is crucial for interlaboratory data comparison and for instrument calibration. Certification measurements were performed using two different techniq ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=854458

32. Development, Performance and Applications of 4.5 kV SiC JBS Diodes
Topic: Semiconductors
Published: 3/22/2011
Author: Allen R Hefner Jr
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908466

33. EEEL Technical Accomplishments
Series: NIST Interagency/Internal Report (NISTIR)
Report Number: 7568
Topic: Semiconductors
Published: 3/30/2009
Author: Erik M Secula
Abstract: This document describes the technical work of the Electronics and Electrical Engineering Laboratory. In this report, you will find that EEEL researchers are developing the world's most advanced sensors, providing advanced gamma ray imagers for astro ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=901701

34. EVALUATING METHODS OF SHIPPING THIN SILICON WAFERS FOR 3D STACKED APPLICATIONS
Topic: Semiconductors
Published: 11/7/2012
Authors: Richard A Allen, Urmi Ray, Vidhya Ramachandran, Iqbal Ali, David Thomas Read, Andreas Fehk¿hrer, J¿rgen Burggraf
Abstract: An experiment was performed to develop a method for choosing appropriate packaging for shipping 300 mm silicon wafers thinned to 100 µm or less for three-dimensional stacked integrated circuits (3DS-ICs). 3DS-ICs hold the promise of improved pe ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912462

35. Effect of Nitrogen on Band Alignment in HfSiON Gate Dielectrics
Topic: Semiconductors
Published: 11/22/2005
Authors: Safak Sayan, Nhan V Nguyen, James R. Ehrstein, James J Chambers, Mark R Visokay, Manuel Quevedo-Lopez, Luigi Colombo, T Yoder, Igor Levin, Daniel Fischer, M Paunescu, Ozgur Celik, Eric Garfunkel
Abstract: We have studied the band alignment of HfSiO and HfSiON films by soft x-ray photoemission (SXPS), oxygen K-edge x-ray absorption (XAS), and spectroscopic ellipsometry. Nitridation of HfSiO reduced the band gap by 1.50+- 0.05eV and the valence and cond ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32000

36. Effect of crystallographic orientation on phase transformations during indentation of silicon
Topic: Semiconductors
Published: 3/9/2009
Authors: Yvonne Beatrice Gerbig, Dylan Morris, Stephan J Stranick, Mark D Vaudin, Robert Francis Cook
Abstract: In a statistical nanoindentation study using a spherical probe, the effect of crystallographic orientation on the phase transformation of silicon (Si) was investigated. The presence and pressure at which events associated with phase transformation oc ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=854143

37. Effects of Polymorphism on Charge Transport in Organic Semiconductors
Topic: Semiconductors
Published: 8/3/2009
Authors: Oana Jurchescu, M. Devin, Sankar Subramanian, Sean R Parkin, Brandon Vogel, John E Anthony, Thomas Jackson, David J Gundlach
Abstract: The increasing interest in fluorinated 5,11-bis(triethylsilylethynyl)anthradithiophene (diF TES ADT) is motivated by the demonstrated high performance field-effect transistors and circuits based on this material, complemented by reduced complexity pr ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=33181

38. Electrical Characterization of Soluble Anthradithiophene Derivatives
Topic: Semiconductors
Published: 11/19/2009
Authors: Brad Conrad, Calvin Chan, Marsha A. Loth, John E Anthony, David J Gundlach
Abstract: Organic semiconductors remain an active subject for device physics and material science because of their varied electrical properties and potential for low-cost, high-throughput roll-to-roll processing. Several high-mobility oligomers, such as pen ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905388

39. Electrically Detected Magnetic Resonance in Dielectric Semiconductor Systems of Current Interest
Topic: Semiconductors
Published: 5/1/2011
Authors: P. M. Lenahan, Corey Cochrane, Jason P Campbell, Jason T Ryan
Abstract: Several electrically detected magnetic resonance techniques provide insight into the physical and chemical structure of technologically significant deep level defects in solid state electronics. Spin dependent recombination is sensitive to deep level ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=909230

40. Electron Trapping: An Unexpected Mechanism of NBTI and Its Implications
Topic: Semiconductors
Published: 6/17/2008
Authors: Jason P Campbell, Kin P Cheung, John S Suehle, A Oates
Abstract: We utilize fast-IdVg measurements to examine NBTI recovery over a time scale of 2usecs to 1000 seconds. The extracted DVTH and %GM degradation data clearly demonstrates the presence of hole as well as electron trapping and detrapping. The hole and el ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32983