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You searched on: Topic Area: Semiconductors Sorted by: title

Displaying records 31 to 40 of 46 records.
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31. Photoemission Threshold Spectroscopy: MOS Band alignments
Topic: Semiconductors
Published: 4/7/2011
Author: Nhan V Nguyen
Abstract: In this talk I will 1) briefly review SED‰s history of the optical thin metrology project, 2) describe the principle of internal photoemission (IPE) and the applications to determine the band alignments of metal-oxide-semiconductor structures, an ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908441

32. Physics Careers in Government Agencies
Topic: Semiconductors
Published: 3/14/2010
Author: David G Seiler
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905142

33. Relative Photon-to-Carrier Efficiencies of Alternating Nanolayers of Zinc Phthalocyanine and C60 Multilayer Films Assessed by Time-Resolved Terahertz Spectroscopy
Topic: Semiconductors
Published: 10/1/2009
Authors: Okan Esenturk, Joseph S Melinger, Paul A. Lane, Edwin J Heilweil
Abstract: Alternating multi-layer and 1:1 blended films of zinc phthalocyanine (ZnPc)and buckminsterfullerene (C60) were investigated as model active layers for solar cells by Time-Resolved Terahertz Spectroscopy (TRTS). Relative photon-to-carrier efficiencies ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=902140

34. Reliability Monitoring For Highly Leaky Devices
Topic: Semiconductors
Published: 5/31/2013
Authors: Jason T Ryan, Jason P Campbell, Kin P Cheung, John S Suehle, Richard Southwick, Anthony Oates
Abstract: We demonstrate a new charge pumping (CP) methodology, frequency modulated CP (FMCP), that robustly treats metrology challenges associated with high gate leakage current. By moving to an AC coupled measurement, we are able to easily resolve small CP s ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913575

35. Silicon-based Molecular Electronics in the Post-Hype Era
Topic: Semiconductors
Published: 4/8/2011
Author: Christina Ann Hacker
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908431

36. Spectroscopic charge pumping investigation of the amphoteric nature of Si/SiO2 interface states
Topic: Semiconductors
Published: 6/6/2011
Authors: Jason T Ryan, Liangchun Yu, Jae Han, Joseph J Kopanski, Kin P Cheung, Fei Zhang, Chen Wang, Jason P Campbell, John S Suehle
Abstract: The amphoteric nature of Si/SiO2 interface states in submicron sized metal-oxide-silicon-field-effect-transistors is observed using an enhanced spectroscopic charge pumping method. The method‰s simplicity and high sensitivity makes it a powerful too ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908429

37. Spray Deposited Poly-3-hexylthiophene Thin Film Transistors
Topic: Semiconductors
Published: 12/11/2009
Authors: Calvin Chan, Lee J Richter, David Germack, Brad Conrad, Daniel A Fischer, Dean M DeLongchamp, David J Gundlach
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905385

38. Structural and Electrical Characterization of Flip Chip Laminated omega-functionalized thiols
Topic: Semiconductors
Published: 4/15/2010
Authors: Mariona Coll Bau, Oana Jurchescu, Nadine Emily Gergel-Hackett, Curt A Richter, Christina Ann Hacker
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907067

39. Synchrotron-Based Measurement of the Impact of Thermal Cycling on the Evolution of Stresses in Cu Through-Silicon Via
Topic: Semiconductors
Published: 6/30/2014
Authors: Chukwudi Azubuike Okoro, Lyle E Levine, Ruqing Xu, Klaus Hummler, Yaw S Obeng
Abstract: One of the main causes of failure during the lifetime of microelectronics devices is their exposure to fluctuating temperatures. In this work, synchrotron-based X-ray micro-diffraction is used to study the evolution of stresses in copper through-sili ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=915982

40. Tensile measurement of single crystal gallium nitride nanowires on MEMS test stages
Topic: Semiconductors
Published: 4/18/2010
Authors: J. J. Brown, A. I. Baca, Kristine A Bertness, D. A. Dikin, R. S. Ruoff, Victor M. Bright
Abstract: This paper reports the first direct tensile tests on nearly defect free, n-type (Si-doped) gallium nitride single crystal nanowires. Here, for the first time, nanowires have been integrated with actuated, active microelectromechanical (MEMS) structur ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=902539



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