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You searched on: Topic Area: Semiconductors Sorted by: title

Displaying records 21 to 30 of 49 records.
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21. Frontiers of Characterization and Metrology for Nanoelectronics: 2009
Topic: Semiconductors
Published: 10/5/2009
Authors: David G Seiler, Alain C. Diebold, Robert McDonald, C. Michael Garner, Dan Herr, Rajinder P. Khosla, Erik M Secula
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=904357

22. Graphene Nanoribbon Tunnel FETs
Topic: Semiconductors
Published: 9/21/2010
Author: Qin Q. Zhang
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907100

23. Influence of Metal¿MoS2 Interface on MoS2 Transistor Performance: Comparison of Ag and Ti Contacts
Topic: Semiconductors
Published: 12/16/2014
Authors: Hui H. Yuan, Guangjun Cheng, Lin You, Haitao Li, Hao Zhu, Wei Li, Joseph J Kopanski, Yaw S Obeng, Angela R Hight Walker, David J Gundlach, Curt A Richter, D. E Ioannou, Qiliang Li
Abstract: In this work, we present a study of enhancing MoS2 transistor performance by using proper metal contact. We found that the on-state current of MoS2 field-effect transistors with 30 nm Au/ 30 nm Ag contacts is enhanced more than 60 times and the subth ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=916101

24. Interface-State Capture Cross Section , Why Does It Vary So Much?
Topic: Semiconductors
Published: 4/20/2015
Authors: Jason T Ryan, Asahiko Matsuda, Jason P Campbell, Kin P Cheung
Abstract: A capture cross section value is often assigned to Si-SiO2 interface defects. Using a kinetic variation of the charge pumping technique and transition state theory, we show that the value of capture cross section is extremely sensitive to the mea ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=917503

25. Investigation of SiO2/HfO2 stacks for flash memory applications
Topic: Semiconductors
Published: 4/28/2011
Authors: Nhan V Nguyen, Bashwar Chakrabarti
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908443

26. Local Structure of Cu in Cs8Na16Cu5Ge131 Type II Clathrate
Topic: Semiconductors
Published: 1/8/2009
Authors: Winnie K Wong-Ng, Azzam Mansour, Matthew Beekman, George S. Nolas
Abstract: We have used X-ray absorption spectroscopy (XAS) to investigate the local structure of Cu and Ge in the Cs8Na16Cu5Ge131 type II clathrate. We show that the local structure parameters, coordination number, and distances for Ge are consistent with thos ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=854090

27. MEMS
Topic: Semiconductors
Published: 1/12/2012
Author: Michael Gaitan
Abstract: Micro-Electro-Mechanical Systems (MEMS) are devices that are fabricated using techniques similar to those used for integrated circuits (ICs) to create micrometer-sized mechanical structures (suspended bridges, cantilevers, membranes, fluid channels ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910072

28. Mapping the Edge-Roughness of Test Structure Features for Nanometer-Level CD Reference-Materials
Topic: Semiconductors
Published: 4/2/2009
Authors: Michael W. Cresswell, M Davidson, Geraldine I. Mijares, Richard A Allen, Jon C Geist, M R Bishop
Abstract: The near-term objective of the work reported here is developing a protocol for rapidly mapping CD and edge roughness from high-resolution SEM images of reference-material features patterned on SCCDRM chips. The longer term mission is to formulate a ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=901520

29. Measurement Science for "More-Than-Moore" Technology Reliability Assessments
Topic: Semiconductors
Published: 10/12/2012
Authors: Chukwudi Azubuike Okoro, Jungjoon Ahn, Meagan V. Kelso, Pavel Kabos, Joseph J Kopanski, Yaw S Obeng
Abstract: In this paper, we will present an overview of metrology issues and some of the techniques currently under development in our group at NIST, aimed at understanding some of the potential performance limiting issues in such highly integrated systems ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911714

30. Nanoelectronic Fabrication with Flip Chip Lamination
Topic: Semiconductors
Published: 12/15/2009
Authors: Mariona Coll Bau, Curt A Richter, Christina Ann Hacker
Abstract: Nanoelectronic fabrication with Flip chip lamination Mariona Coll, CA Richter, CA Hacker, Colloquium Catalan Institute of Nanoscience and Nanotechnology CIN2, Barcelona Spain, Dec 2009.
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907070



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