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Topic Area: Semiconductors
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Displaying records 21 to 30 of 135 records.
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21. Combinatorial study of the crystallinity boundary in the HfO2-TiO2-Y2O3 system using pulsed laser deposition library thin films
Topic: Semiconductors
Published: 5/16/2008
Authors: Peter K. Schenck, Jennifer L Klamo, Nabil Bassim, Peter G. Burke, Yvonne Beatrice Gerbig, Martin L Green
Abstract: HfO2-TiO2-Y2O3 is an interesting high-k dielectric system.  Combinatorial library films of this system enable the study of the role of composition on phase formation as well as optical and mechanical properties.  A library film of this syst ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=853610

22. Comparison of Nanoscale Measurements of Strain and Stress using Electron Back Scattered Diffraction and Confocal Raman Microscopy
Topic: Semiconductors
Published: 12/12/2008
Authors: Mark D Vaudin, Yvonne Beatrice Gerbig, Stephan J Stranick, Robert Francis Cook
Abstract: Strains in Si as small as 104 (corresponding to stresses of 10 MPa) have been measured using electron back scatter diffraction (EBSD), with spatial resolution close to 10 nm, and confocal Raman microscopy (CRM) with spatial resolution app ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=854129

23. Comparison of scanning capacitance microscopy and scanning Kelvin probe microscopy in determining two-dimensional doping profiles of Si homostructures
Topic: Semiconductors
Published: 2/1/2006
Authors: Seong-Eun Park, Nhan V Nguyen, Joseph J Kopanski, John S Suehle, Eric M. Vogel
Abstract: Two-dimensional (2-D) doping profiles of differently doped Si homostructures were investigated by scanning capacitance microscopy (SCM) and scanning Kelvin probe microscopy (SKPM). The calibrated doping concentration of the n-step Si layers was in th ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31963

24. Compound Semiconductor Roadmap Embedded in the 2003 International Technology Roadmap for Semiconductors
Topic: Semiconductors
Published: 7/1/2004
Author: Herbert S Bennett
Abstract: This paper contains higlights from a technology roadmap on compound semiconductors. This roadmap is part on an overall technology roadmap on RF and analog-mixed signal (AMS) technologies for wireless communications that is in the 2003 International T ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31661

25. Controlled Formation and Resistivity Scaling of Nickel Silicide Nanolines
Topic: Semiconductors
Published: 2/25/2009
Authors: Bin Li, Zhiquan Luo, Paul S. Ho, Li Shi, Lew Rabenberg, JiPing Zhou, Richard A Allen, Michael W Cresswell
Abstract: We demonstrate a top-down method to fabricate nickel mono-silicide (NiSi) nanolines with smooth side walls and linewidths down to 15 nm. Four probe electrical measurements revealed that the electrical resistivity at room temperature remained constant ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32991

26. Current Status of, and Future Directions in, Silicon Photodiode Self-Calibration
Topic: Semiconductors
Published: 12/31/1989
Author: Jon C Geist
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=29375

27. Demonstration of Molecular Assembly on Silicon (100) for CMOS-Compatible Molecule-Based Electronic Devices
Topic: Semiconductors
Published: 3/7/2008
Authors: Nadine Emily Gergel-Hackett, Christopher D Zangmeister, Christina Ann Hacker, Lee J Richter, Curt A Richter
Abstract: In this work, we establish the potential of a UV-promoted direct attachment of alkanes with alcohol and thiol linkers to the CMOS-compatible silicon (100) orientation for use in closed, planar, molecular electronic devices. We develop processes for m ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32875

28. Demonstration of a Wafer-level Hall-Mobility Measurement Technique
Topic: Semiconductors
Published: 12/3/2009
Authors: Liangchun Yu, Kin P Cheung, Vinayak Tilak, Greg Dunne, Kevin Matocha, Jason P Campbell, John S Suehle, Kuang Sheng
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905433

29. Dependence of Electron Density on Fermi Energy in Compensated N-type Gallium Antimonide
Topic: Semiconductors
Published: 11/11/2005
Authors: Herbert S Bennett, Howard Hung
Abstract: The majority electron density as a function of the Fermi energy is calculated in zinc blende, compensated n-type GaSb for donor densities between 1016 cm-3 and 1019 cm-3. The compensation acceptor density is 1016 cm-3. These calculations solve the ch ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31933

30. Design and Fabrication of a Copper Test Structure as a Electrical Critical Dimension Reference
Topic: Semiconductors
Published: 4/1/2006
Authors: Byron J Shulver, Andrew S Bunting, Alan Gundlach, Les I Haworth, Alan W Ross, Anthony J Snell, J. Tom Stevenson, Anthony Walton, Richard A Allen, Michael W Cresswell
Abstract: A novel copper damascene process is reported for the implementation of Electrical Critical Dimension (ECD) reference material. The method of fabrication first creates an initial 'silicon preform' whose linewidth is transfered into a trench using a si ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32169