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You searched on: Topic Area: Semiconductors Sorted by: title

Displaying records 21 to 30 of 46 records.
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21. Graphene Nanoribbon Tunnel FETs
Topic: Semiconductors
Published: 9/21/2010
Author: Qin Q. Zhang
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907100

22. Influence of Metal¿MoS2 Interface on MoS2 Transistor Performance: Comparison of Ag and Ti Contacts
Topic: Semiconductors
Published: 12/16/2014
Authors: Hui H. Yuan, Guangjun Cheng, Lin You, Haitao Li, Hao Zhu, wei li, Joseph J Kopanski, Yaw S Obeng, Angela R Hight Walker, David J Gundlach, Curt A Richter, D. E Ioannou, Qiliang Li
Abstract: In this work, we present a study of enhancing MoS2 transistor performance by using proper metal contact. We found that the on-state current of MoS2 field-effect transistors with 30 nm Au/ 30 nm Ag contacts is enhanced more than 60 times and the subth ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=916101

23. Investigation of SiO2/HfO2 stacks for flash memory applications
Topic: Semiconductors
Published: 4/28/2011
Authors: Nhan V Nguyen, Bashwar Chakrabarti
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908443

24. Local Structure of Cu in Cs8Na16Cu5Ge131 Type II Clathrate
Topic: Semiconductors
Published: 1/8/2009
Authors: Winnie K Wong-Ng, Azzam Mansour, Matthew Beekman, George S. Nolas
Abstract: We have used X-ray absorption spectroscopy (XAS) to investigate the local structure of Cu and Ge in the Cs8Na16Cu5Ge131 type II clathrate. We show that the local structure parameters, coordination number, and distances for Ge are consistent with thos ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=854090

25. MEMS
Topic: Semiconductors
Published: 1/12/2012
Author: Michael Gaitan
Abstract: Micro-Electro-Mechanical Systems (MEMS) are devices that are fabricated using techniques similar to those used for integrated circuits (ICs) to create micrometer-sized mechanical structures (suspended bridges, cantilevers, membranes, fluid channels ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910072

26. Mapping the Edge-Roughness of Test Structure Features for Nanometer-Level CD Reference-Materials
Topic: Semiconductors
Published: 4/2/2009
Authors: Michael W Cresswell, M Davidson, Geraldine I. Mijares, Richard A Allen, Jon C Geist, M R Bishop
Abstract: The near-term objective of the work reported here is developing a protocol for rapidly mapping CD and edge roughness from high-resolution SEM images of reference-material features patterned on SCCDRM chips. The longer term mission is to formulate a ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=901520

27. Measurement Science for "More-Than-Moore" Technology Reliability Assessments
Topic: Semiconductors
Published: 10/12/2012
Authors: Chukwudi Azubuike Okoro, Jungjoon Ahn, Meagan V. Kelso, Pavel Kabos, Joseph J Kopanski, Yaw S Obeng
Abstract: In this paper, we will present an overview of metrology issues and some of the techniques currently under development in our group at NIST, aimed at understanding some of the potential performance limiting issues in such highly integrated systems ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911714

28. Nanoelectronic Fabrication with Flip Chip Lamination
Topic: Semiconductors
Published: 12/15/2009
Authors: Mariona Coll Bau, Curt A Richter, Christina Ann Hacker
Abstract: Nanoelectronic fabrication with Flip chip lamination Mariona Coll, CA Richter, CA Hacker, Colloquium Catalan Institute of Nanoscience and Nanotechnology CIN2, Barcelona Spain, Dec 2009.
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907070

29. Non-destructive Measurement of the Residual Stresses in Copper Through-Silicon Vias using Synchrotron Based Micro-beam X-ray Diffraction
Topic: Semiconductors
Published: 7/1/2014
Authors: Chukwudi Azubuike Okoro, Lyle E Levine, Yaw S Obeng, Klaus Hummler, Ruqing Xu
Abstract: In this study, we report a new method for achieving depth resolved determination of the full stress tensor in buried Cu through-silicon vias (TSVs), using synchrotron based X-ray micro-diffraction technique. Two adjacent Cu TSVs were analyzed; on ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=915348

30. Organic Electronics: Challenges and Opportunities
Topic: Semiconductors
Published: 3/31/2010
Author: Calvin Chan
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905389



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