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Topic Area: Semiconductors
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Displaying records 21 to 30 of 151 records.
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21. Characterization of the silicon dioxide-silicon interface with the scanning capacitance microscope
Topic: Semiconductors
Published: 7/1/2006
Authors: Joseph J Kopanski, W. Robert Thurber, Melissa Chun
Abstract: The scanning capacitance microscope (SCM) was used to characterize the capacitance-voltage (C-V) properties of silicon dioxide (SiO2) on silicon (Si). The operational mechanism of the SCM and its potential for non-destructive, contactless characteriz ...

22. Charaterization of PFC Emissions from Semiconductor Process Tools
Topic: Semiconductors
Published: 9/1/1998
Authors: David S. Green, J. Meyers

23. Circuit Simulation Model for a 100 A, 10 kV Half-bridge SiC MOSFET/JBS Power Module
Topic: Semiconductors
Published: 2/24/2008
Authors: Tam Hoang Duong, Angel Rivera-Lopez, Allen R Hefner Jr, Jose Miguel Ortiz
Abstract: This paper presents the simulation of a 100 A, 10 kV Silicon Carbide (SiC) half-bridge power module operating at 20 kHz in a behavioral boost converter circuit. In the half-bridge module, 10 kV SiC power MOSFETs are used as the upper and lower switch ...

24. Combinatorial study of the crystallinity boundary in the HfO2-TiO2-Y2O3 system using pulsed laser deposition library thin films
Topic: Semiconductors
Published: 5/16/2008
Authors: Peter K. Schenck, Jennifer L Klamo, Nabil Bassim, Peter G. Burke, Yvonne Beatrice Gerbig, Martin L Green
Abstract: HfO2-TiO2-Y2O3 is an interesting high-k dielectric system.  Combinatorial library films of this system enable the study of the role of composition on phase formation as well as optical and mechanical properties.  A library film of this syst ...

25. Comparison of Nanoscale Measurements of Strain and Stress using Electron Back Scattered Diffraction and Confocal Raman Microscopy
Topic: Semiconductors
Published: 12/12/2008
Authors: Mark D Vaudin, Yvonne Beatrice Gerbig, Stephan J Stranick, Robert Francis Cook
Abstract: Strains in Si as small as 104 (corresponding to stresses of 10 MPa) have been measured using electron back scatter diffraction (EBSD), with spatial resolution close to 10 nm, and confocal Raman microscopy (CRM) with spatial resolution app ...

26. Comparison of scanning capacitance microscopy and scanning Kelvin probe microscopy in determining two-dimensional doping profiles of Si homostructures
Topic: Semiconductors
Published: 2/1/2006
Authors: Seong-Eun Park, Nhan V Nguyen, Joseph J Kopanski, John S Suehle, Eric M. Vogel
Abstract: Two-dimensional (2-D) doping profiles of differently doped Si homostructures were investigated by scanning capacitance microscopy (SCM) and scanning Kelvin probe microscopy (SKPM). The calibrated doping concentration of the n-step Si layers was in th ...

27. Compound Semiconductor Roadmap Embedded in the 2003 International Technology Roadmap for Semiconductors
Topic: Semiconductors
Published: 7/1/2004
Author: Herbert S Bennett
Abstract: This paper contains higlights from a technology roadmap on compound semiconductors. This roadmap is part on an overall technology roadmap on RF and analog-mixed signal (AMS) technologies for wireless communications that is in the 2003 International T ...

28. Constant Shape Factor Frequency Modulated Charge Pumping (FMCP)
Topic: Semiconductors
Published: 3/3/2014
Authors: Jason T Ryan, Jason P Campbell, Jibin Zou, Kin P Cheung, Richard Southwick, Anthony Oates, Rue Huang
Abstract: Abstract, We examine the seemingly frequency-dependent gate leakage current component of frequency-modulated charge pumping and show it to be a measurement artifact. If untreated, this results in erroneous defect density extractions. We present a co ...

29. Controlled Formation and Resistivity Scaling of Nickel Silicide Nanolines
Topic: Semiconductors
Published: 2/25/2009
Authors: Bin Li, Zhiquan Luo, Paul S. Ho, Li Shi, Lew Rabenberg, JiPing Zhou, Richard A Allen, Michael W Cresswell
Abstract: We demonstrate a top-down method to fabricate nickel mono-silicide (NiSi) nanolines with smooth side walls and linewidths down to 15 nm. Four probe electrical measurements revealed that the electrical resistivity at room temperature remained constant ...

30. Current Compliance Circuit to Improve Variation in ON State Characteristics and to Minimize RESET Current
Topic: Semiconductors
Published: 10/7/2012
Authors: Pragya Rasmi Shrestha, Adaku Ochia, Jason P Campbell, Canute Irwin Vaz, Jihong Kim, Kin P Cheung, Helmut Baumgart, Gary Harris
Abstract: The wide distribution of ON and OFF values and high SET current in resistive memory is attributed to the high current overshoot during the SET process. In this paper we show a circuit which is capable of precisely limiting the current during SET proc ...

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