NIST logo

Publications Portal

You searched on:
Topic Area: Semiconductors
Sorted by: title

Displaying records 11 to 20 of 144 records.
Resort by: Date / Title


11. Back-End-of-Line Test Structure Design and Simulation for Subsurface Metrology with Scanning Probe Microscopy
Topic: Semiconductors
Published: 12/13/2013
Authors: Lin You, Emily Hitz, Jungjoon Ahn, Yaw S Obeng, Joseph J Kopanski
Abstract: As demands in the semiconductor industry call for further miniaturization and performance enhancement of electronic systems, the traditional planar (2D) electronic interconnection and packaging technologies show their difficulties in meeting the ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=915013

12. Building-In Reliability: Making It Work
Topic: Semiconductors
Published: 5/1/1991
Authors: Harry A. Schafft, D F Lee, P. E. Kennedy
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=6948

13. Cellular Immobilization within Microfluidic Microenvironments: Dielectophoresis with Polyelectrolyte Multilayers
Topic: Semiconductors
Published: 10/25/2006
Authors: Samuel P. Forrey, Darwin R Reyes-Hernandez, Michael Gaitan, Laurie E Locascio
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32513

14. Challenges and Opportunities of Organic Electronics
Topic: Semiconductors
Published: 4/2/2010
Author: Calvin Chan
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905387

15. Channel Hot-Carrier Effect of 4H-SiC MOSFET
Topic: Semiconductors
Published: 3/2/2009
Authors: Liangchun Yu, Kin P Cheung, John S Suehle, Jason P Campbell, Kuang Sheng, Aivars Lelis, Sei-Hyung Ryu
Abstract: SiC MOSFET, as power device, can be expected to operate with high drain and high gate voltages, possibly leading to hot-carrier effect. However, hot-carrier degradation in a SiC MOSFET is difficult to detect because the as fabricated devices contain ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=900181

16. Characterization System for Embedded Gas Sensor Systems-on-a-Chip
Topic: Semiconductors
Published: 12/1/2005
Authors: Muhammad Yaqub Afridi, Allen R Hefner Jr, Colleen E. Hood, Richard E Cavicchi, Stephen Semancik
Abstract: A characterization system is presented for evaluating critical functions of a microhotplate-based embedded gas-sensor for system-on-a-chip applications. The system uses a virtual instrument interface to control parts-per-billion (ppb) gas concentrati ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31903

17. Characterization of Ordered Mesoporous Silica Films Using Small Angle Neutron Scattering and X-Ray Porosimetry
Topic: Semiconductors
Published: 2/23/2005
Authors: B D. Vogt, R A. Pai, Hae-Jeong Lee, R C. Hedden, Christopher L Soles, Wen-Li Wu, Eric K Lin, Barry J. Bauer, J J. Watkins
Abstract: Ordered mesoporous silica films were synthesized using pre-organized block copolymer templates in supercritical carbon dioxide. Poly(ethylene oxide-block-propylene oxide-block-ethylene oxide), PEO-b-PPO-b-PEO, films doped with p-toluenesulfonic acid ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=852370

18. Characterization of Pore Structure in Nanoporous Low-Dielectric Constant Thin Film by Neutron Porosimetry X-Ray Porosimetry
Topic: Semiconductors
Published: 7/2/2004
Authors: R C. Hedden, Hae-Jeong Lee, Christopher L Soles, Barry J. Bauer
Abstract: A small-angle neutron scattering (SANS) porosimetry technique is presented for characterization of pore structure in nanoporous thin films. The technique is applied to characterize a spin-on organosilicate low dielectric constant (low-k) material wi ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=852279

19. Characterization of a Soluble Anthradithiophene Derivative
Topic: Semiconductors
Published: 10/1/2010
Authors: Brad Conrad, Calvin Chan, Marsha A. Loth, Sean R Parkin, Xinran Zhang, John E Anthony, David J Gundlach
Abstract: The structural and electrical properties of a new solution processable material, 2,8-diflouro-5,11-tert-butyldimethylsilylethynl anthradithiophene (TBDMS), were measured for single crystal and spun cast thin-film transistors. TBDMS is observed to rea ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905704

20. Characterization of the silicon dioxide-silicon interface with the scanning capacitance microscope
Topic: Semiconductors
Published: 7/1/2006
Authors: Joseph J Kopanski, W. Robert Thurber, Melissa Chun
Abstract: The scanning capacitance microscope (SCM) was used to characterize the capacitance-voltage (C-V) properties of silicon dioxide (SiO2) on silicon (Si). The operational mechanism of the SCM and its potential for non-destructive, contactless characteriz ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31516



Search NIST-wide:


(Search abstract and keywords)


Last Name:
First Name:







Special Publications:

Looking for a NIST Special Publication (NIST SP Series)? Place the series number and dash in the report number field (Example: 800-) and begin your search.

  • SP 250-XX: Calibration Services
  • SP 260-XX: Standard Reference Materials
  • SP 300-XX: Precision Measurement and Calibration
  • SP 400-XX: Semiconductor Measurement Technology
  • SP 480-XX: Law Enforcement Technology
  • SP 500-XX: Computer Systems Technology
  • SP 700-XX: Industrial Measurement Series
  • SP 800-XX: Computer Security Series
  • SP 823-XX: Integrated Services Digital Network Series