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Displaying records 11 to 20 of 48 records.
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11. Detection of 3D Interconnect Bonding Voids by IR Microscopy
Topic: Semiconductors
Published: 2/20/2014
Authors: Jonny H?glund, Zoltan Kiss, Gyorgy Nadudvari , Zsolt Kovacs, Szabolcs Velkei, Moore Chris, Victor Vartanian, Richard A Allen
Abstract: There are a number of factors driving 3D integration including reduced power consumption, RC delay, and form factor as well as increased bandwidth. However, before these advantages can be realized, various technical and cost hurdles must be overcom ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=914474

12. Development of a Seebeck Coefficient Standard Reference Material
Topic: Semiconductors
Published: 8/7/2009
Authors: Nathan Lowhorn, Winnie K Wong-Ng, John Lu, Evan L. Thomas, Makoto Otani, Martin L Green, Neil Dilley, Jeffrey Sharp, Thanh N. Tran
Abstract: We have successfully developed a Seebeck coefficient Standard Reference Material (SRM ), Bi2Te3, that is crucial for interlaboratory data comparison and for instrument calibration. Certification measurements were performed using two different techniq ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=854458

13. EEEL Technical Accomplishments
Series: NIST Interagency/Internal Report (NISTIR)
Report Number: 7568
Topic: Semiconductors
Published: 3/30/2009
Author: Erik M Secula
Abstract: This document describes the technical work of the Electronics and Electrical Engineering Laboratory. In this report, you will find that EEEL researchers are developing the world's most advanced sensors, providing advanced gamma ray imagers for astro ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=901701

14. Electrical Characterization of Soluble Anthradithiophene Derivatives
Topic: Semiconductors
Published: 11/19/2009
Authors: Brad Conrad, Calvin Chan, Marsha A. Loth, John E Anthony, David J Gundlach
Abstract: Organic semiconductors remain an active subject for device physics and material science because of their varied electrical properties and potential for low-cost, high-throughput roll-to-roll processing. Several high-mobility oligomers, such as pen ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905388

15. Electrically Detected Magnetic Resonance in Dielectric Semiconductor Systems of Current Interest
Topic: Semiconductors
Published: 5/1/2011
Authors: P. M. Lenahan, Corey Cochrane, Jason P Campbell, Jason T Ryan
Abstract: Several electrically detected magnetic resonance techniques provide insight into the physical and chemical structure of technologically significant deep level defects in solid state electronics. Spin dependent recombination is sensitive to deep level ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=909230

16. Flip Chip Lamination Approach to Fabricate Top Metal Contacts on Organic-based Devices
Topic: Semiconductors
Published: 3/15/2010
Authors: Mariona Coll Bau, Oana Jurchescu, Nadine Emily Gergel-Hackett, Curt A Richter, Christina Ann Hacker
Abstract: Flip Chip Lamination approach to fabricate top metal contacts on organic-based devices ; M.Coll, O.D. Jurchescu, N. Gergel-Hackett, C.A. Richter, C,A, Hacker, American Physical Society (APS), March 2010, Portland, OR, USA (oral)
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907069

17. Formation of Silicon-Based Molecular Electronic Structures Using Flip-chip Lamination
Topic: Semiconductors
Published: 8/11/2009
Authors: Mariona Coll Bau, Lauren H. Miller, Lee J Richter, Daniel R. Hines, Curt A Richter, Christina Ann Hacker
Abstract: The use of organic molecules to impart electrical surface properties has been a subject of intense research not only from a fundamental perspective but for many technological applications. In particular, organic molecules have been proposed as activ ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=901565

18. Frequency Dependent Charge Pumping -- A Defect Depth Profiling Tool?
Topic: Semiconductors
Published: 1/31/2013
Authors: Jason T Ryan, Richard G. Southwick, Jason P Campbell, Kin P Cheung, John S Suehle
Abstract: We investigate the validity of using frequency-dependent charge pumping (FD-CP) to determine bulk defect depth distributions. Using simple physical arguments we conclude that: (1) the effective tunneling length to a bulk defect can be very different ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913573

19. Frequency-Modulated Charge Pumping: Defect Measurements with High Gate Leakage
Topic: Semiconductors
Published: 2/28/2013
Authors: Jason T Ryan, Richard G. Southwick, Jason P Campbell, Kin P Cheung, John S Suehle, Anthony Oates
Abstract: Charge pumping is one of the most relied upon techniques used to quantify interface defects in metal-oxide-semiconductor devices. However, conventional charge pumping is easily hindered by excessive gate leakage currents which render the technique un ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913574

20. Frontiers of Characterization and Metrology for Nanoelectronics: 2009
Topic: Semiconductors
Published: 10/5/2009
Authors: David G Seiler, Alain C. Diebold, Robert McDonald, C. Michael Garner, Dan Herr, Rajinder P. Khosla, Erik M Secula
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=904357



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