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Topic Area: Semiconductors
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Displaying records 11 to 20 of 135 records.
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11. Cellular Immobilization within Microfluidic Microenvironments: Dielectophoresis with Polyelectrolyte Multilayers
Topic: Semiconductors
Published: 10/25/2006
Authors: Samuel P. Forrey, Darwin R Reyes-Hernandez, Michael Gaitan, Laurie E Locascio
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32513

12. Challenges and Opportunities of Organic Electronics
Topic: Semiconductors
Published: 4/2/2010
Author: Calvin Chan
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905387

13. Channel Hot-Carrier Effect of 4H-SiC MOSFET
Topic: Semiconductors
Published: 3/2/2009
Authors: Liangchun Yu, Kin P Cheung, John S Suehle, Jason P Campbell, Kuang Sheng, Aivars Lelis, Sei-Hyung Ryu
Abstract: SiC MOSFET, as power device, can be expected to operate with high drain and high gate voltages, possibly leading to hot-carrier effect. However, hot-carrier degradation in a SiC MOSFET is difficult to detect because the as fabricated devices contain ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=900181

14. Characterization System for Embedded Gas Sensor Systems-on-a-Chip
Topic: Semiconductors
Published: 12/1/2005
Authors: Muhammad Yaqub Afridi, Allen R Hefner Jr, Colleen E. Hood, Richard E Cavicchi, Stephen Semancik
Abstract: A characterization system is presented for evaluating critical functions of a microhotplate-based embedded gas-sensor for system-on-a-chip applications. The system uses a virtual instrument interface to control parts-per-billion (ppb) gas concentrati ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31903

15. Characterization of Ordered Mesoporous Silica Films Using Small Angle Neutron Scattering and X-Ray Porosimetry
Topic: Semiconductors
Published: 2/23/2005
Authors: B D. Vogt, R A. Pai, Hae-Jeong Lee, R C. Hedden, Christopher L Soles, Wen-Li Wu, Eric K Lin, Barry J. Bauer, J J. Watkins
Abstract: Ordered mesoporous silica films were synthesized using pre-organized block copolymer templates in supercritical carbon dioxide. Poly(ethylene oxide-block-propylene oxide-block-ethylene oxide), PEO-b-PPO-b-PEO, films doped with p-toluenesulfonic acid ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=852370

16. Characterization of Pore Structure in Nanoporous Low-Dielectric Constant Thin Film by Neutron Porosimetry X-Ray Porosimetry
Topic: Semiconductors
Published: 7/2/2004
Authors: R C. Hedden, Hae-Jeong Lee, Christopher L Soles, Barry J. Bauer
Abstract: A small-angle neutron scattering (SANS) porosimetry technique is presented for characterization of pore structure in nanoporous thin films. The technique is applied to characterize a spin-on organosilicate low dielectric constant (low-k) material wi ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=852279

17. Characterization of a Soluble Anthradithiophene Derivative
Topic: Semiconductors
Published: 10/1/2010
Authors: Brad Conrad, Calvin Chan, Marsha A. Loth, Sean R Parkin, Xinran Zhang, John E Anthony, David J Gundlach
Abstract: The structural and electrical properties of a new solution processable material, 2,8-diflouro-5,11-tert-butyldimethylsilylethynl anthradithiophene (TBDMS), were measured for single crystal and spun cast thin-film transistors. TBDMS is observed to rea ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905704

18. Characterization of the silicon dioxide-silicon interface with the scanning capacitance microscope
Topic: Semiconductors
Published: 7/1/2006
Authors: Joseph J Kopanski, W. Robert Thurber, Melissa Chun
Abstract: The scanning capacitance microscope (SCM) was used to characterize the capacitance-voltage (C-V) properties of silicon dioxide (SiO2) on silicon (Si). The operational mechanism of the SCM and its potential for non-destructive, contactless characteriz ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31516

19. Charaterization of PFC Emissions from Semiconductor Process Tools
Topic: Semiconductors
Published: 9/1/1998
Authors: David S. Green, J. Meyers
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=903728

20. Circuit Simulation Model for a 100 A, 10 kV Half-bridge SiC MOSFET/JBS Power Module
Topic: Semiconductors
Published: 2/24/2008
Authors: Tam Hoang Duong, Angel Rivera-Lopez, Allen R Hefner Jr, Jose Miguel Ortiz
Abstract: This paper presents the simulation of a 100 A, 10 kV Silicon Carbide (SiC) half-bridge power module operating at 20 kHz in a behavioral boost converter circuit. In the half-bridge module, 10 kV SiC power MOSFETs are used as the upper and lower switch ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32831