NIST logo

Publications Portal

You searched on:
Topic Area: Semiconductors
Sorted by: title

Displaying records 131 to 140 of 149 records.
Resort by: Date / Title

131. Synchrotron-Based Measurement of the Impact of Thermal Cycling on the Evolution of Stresses in Cu Through-Silicon Via
Topic: Semiconductors
Published: 6/30/2014
Authors: Chukwudi Azubuike Okoro, Lyle E Levine, Ruqing Xu, Klaus Hummler, Yaw S Obeng
Abstract: One of the main causes of failure during the lifetime of microelectronics devices is their exposure to fluctuating temperatures. In this work, synchrotron-based X-ray micro-diffraction is used to study the evolution of stresses in copper through-sili ...

132. Tensile measurement of single crystal gallium nitride nanowires on MEMS test stages
Topic: Semiconductors
Published: 4/18/2010
Authors: J. J. Brown, A. I. Baca, Kristine A Bertness, D. A. Dikin, R. S. Ruoff, Victor M. Bright
Abstract: This paper reports the first direct tensile tests on nearly defect free, n-type (Si-doped) gallium nitride single crystal nanowires. Here, for the first time, nanowires have been integrated with actuated, active microelectromechanical (MEMS) structur ...

133. Terahertz Mobility Measurements on P3HT Films: Device Comparison, Molecular Weight and Film Processing Effects
Topic: Semiconductors
Published: Date unknown
Authors: Okan Esenturk, Joseph S Melinger
Abstract: We report the first direct comparison of relative carrier mobilities in semiconducting organic polymer films measured using non-contact optical pump terahertz probe spectroscopy to those reported in electrical device studies. Relative transient sign ...

134. Test Chip to Evaluate Measurement Methods for Small Capacitances
Topic: Semiconductors
Published: 3/30/2009
Authors: Joseph J Kopanski, Muhammad Yaqub Afridi, Chong Jiang, Curt A Richter
Abstract: We designed and fabricated a test chip to help us evaluate the performance of new approaches to measurement of small capacitances (femto-Farads to atto-Farads range). The test chip consists of an array of metal-oxide-semiconductor capacitors, metal-i ...

135. Test Structures for Study of Electron Transport in Nickel Silicide Features with Linewidths between 40 nm and 100 nm
Topic: Semiconductors
Published: 4/1/2006
Authors: Bin Li, Li Shi, Paul S. Ho, JiPing Zhou, Richard A Allen, Michael W Cresswell
Abstract: A new test structure has been designed and fabricated for the investigation of the effect of linewidth scaling on electron transport in nickel mono-silicide features. In the fabrication process, nickel silicide (NiSi) features were formed by annealin ...

136. The Absorption Cross Section of As in Si
Topic: Semiconductors
Published: 12/31/1989
Authors: Jon C Geist, M. G. Stapelbroek, M. D. Petroff

137. The Direct Patterning of Nanoporous Interlayer Dielectric Insulator Films by Nanoimprint Lithography
Topic: Semiconductors
Published: 10/2/2007
Authors: Hyun W. Ro, Ronald Leland Jones, H Peng, Daniel R. Hines, Hae-Jeong Lee, Eric K Lin, Alamgir Karim, Do Y. Yoon, D Gidley, Christopher Soles
Abstract: Directly patterning dielectric insulator materials via nanoimprint lithography has the potential to simplify fabrication processes and significantly reduce the manufacturing costs for semiconductor devices. However, the prospect of mechanically form ...

138. The Origins of Random Telegraph Noise in Highly Scaled SiON nMOSFETs
Topic: Semiconductors
Published: 10/17/2008
Authors: Jason P Campbell, Jin Qin, Kin P Cheung, Liangchun Yu, John S Suehle, A Oates, Kuang Sheng
Abstract: Random telegraph noise (RTN) has recently become an important issue in advanced circuit performance. It has also recently been used as a tool for gate dielectric defect profiling. In this work, we show that the widely accepted model thought to govern ...

139. The relationship between local order, long range order, and sub-bandgap defects in hafnium oxide and hafnium silicate films
Topic: Semiconductors
Published: 5/9/2008
Authors: D. H Hill, Robert A Bartynski, Nhan V Nguyen, Albert Davydov, Deane Chandler-Horowitz, Martin M Frank
Abstract: We have measured X-ray absorption spectra (XAS) at the oxygen K-edge for hafnium oxide (HfO2) films grown by chemical vapor deposition (CVD) and atomic layer deposition (ALD), as well as hafnium silicate (HfSiO) films grown by CVD.  The XAS resu ...

140. The transient behavior of NBTI - A new prospective
Topic: Semiconductors
Published: 10/17/2008
Authors: Kin P Cheung, Jason P Campbell
Abstract: The Negative-Bias-Temperature-Instability (NBTI) is currently one of the most serious reliability issues in advanced CMOS technology. Specifically, the fast recovery of NBTI degradation immediately after stress is removed has recently become a hot to ...

Search NIST-wide:

(Search abstract and keywords)

Last Name:
First Name:

Special Publications:

Looking for a NIST Special Publication (NIST SP Series)? Place the series number and dash in the report number field (Example: 800-) and begin your search.

  • SP 250-XX: Calibration Services
  • SP 260-XX: Standard Reference Materials
  • SP 300-XX: Precision Measurement and Calibration
  • SP 400-XX: Semiconductor Measurement Technology
  • SP 480-XX: Law Enforcement Technology
  • SP 500-XX: Computer Systems Technology
  • SP 700-XX: Industrial Measurement Series
  • SP 800-XX: Computer Security Series
  • SP 823-XX: Integrated Services Digital Network Series