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Topic Area: Semiconductors
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Displaying records 131 to 140 of 151 records.
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131. Structural and Electrical Characterization of Flip Chip Laminated omega-functionalized thiols
Topic: Semiconductors
Published: 4/15/2010
Authors: Mariona Coll Bau, Oana Jurchescu, Nadine Emily Gergel-Hackett, Curt A Richter, Christina Ann Hacker
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907067

132. Structural, Electronic, and Dielectric Properties of Ultrathin Zirconia Films on Silicon
Topic: Semiconductors
Published: 11/17/2005
Authors: Safak Sayan, Nhan V Nguyen, James R. Ehrstein, Tom Emge, Eric Garfunkel, Mark Croft, X Zhao, David V Vanderbilt, Ira Levin, Evgeni Gusev, Hyunjung Grace Kim
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32146

133. Synchrotron-Based Measurement of the Impact of Thermal Cycling on the Evolution of Stresses in Cu Through-Silicon Via
Topic: Semiconductors
Published: 6/30/2014
Authors: Chukwudi Azubuike Okoro, Lyle E Levine, Ruqing Xu, Klaus Hummler, Yaw S Obeng
Abstract: One of the main causes of failure during the lifetime of microelectronics devices is their exposure to fluctuating temperatures. In this work, synchrotron-based X-ray micro-diffraction is used to study the evolution of stresses in copper through-sili ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=915982

134. Tensile measurement of single crystal gallium nitride nanowires on MEMS test stages
Topic: Semiconductors
Published: 4/18/2010
Authors: J. J. Brown, A. I. Baca, Kristine A Bertness, D. A. Dikin, R. S. Ruoff, Victor M. Bright
Abstract: This paper reports the first direct tensile tests on nearly defect free, n-type (Si-doped) gallium nitride single crystal nanowires. Here, for the first time, nanowires have been integrated with actuated, active microelectromechanical (MEMS) structur ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=902539

135. Terahertz Mobility Measurements on P3HT Films: Device Comparison, Molecular Weight and Film Processing Effects
Topic: Semiconductors
Published: Date unknown
Authors: Okan Esenturk, Joseph S Melinger
Abstract: We report the first direct comparison of relative carrier mobilities in semiconducting organic polymer films measured using non-contact optical pump terahertz probe spectroscopy to those reported in electrical device studies. Relative transient sign ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=841108

136. Test Chip to Evaluate Measurement Methods for Small Capacitances
Topic: Semiconductors
Published: 3/30/2009
Authors: Joseph J Kopanski, Muhammad Yaqub Afridi, Chong Jiang, Curt A Richter
Abstract: We designed and fabricated a test chip to help us evaluate the performance of new approaches to measurement of small capacitances (femto-Farads to atto-Farads range). The test chip consists of an array of metal-oxide-semiconductor capacitors, metal-i ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=901503

137. Test Structures for Study of Electron Transport in Nickel Silicide Features with Linewidths between 40 nm and 100 nm
Topic: Semiconductors
Published: 4/1/2006
Authors: Bin Li, Li Shi, Paul S. Ho, JiPing Zhou, Richard A Allen, Michael W Cresswell
Abstract: A new test structure has been designed and fabricated for the investigation of the effect of linewidth scaling on electron transport in nickel mono-silicide features. In the fabrication process, nickel silicide (NiSi) features were formed by annealin ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32176

138. The Absorption Cross Section of As in Si
Topic: Semiconductors
Published: 12/31/1989
Authors: Jon C Geist, M. G. Stapelbroek, M. D. Petroff
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=10869

139. The Direct Patterning of Nanoporous Interlayer Dielectric Insulator Films by Nanoimprint Lithography
Topic: Semiconductors
Published: 10/2/2007
Authors: Hyun W. Ro, Ronald Leland Jones, H Peng, Daniel R. Hines, Hae-Jeong Lee, Eric K Lin, Alamgir Karim, Do Y. Yoon, D Gidley, Christopher L Soles
Abstract: Directly patterning dielectric insulator materials via nanoimprint lithography has the potential to simplify fabrication processes and significantly reduce the manufacturing costs for semiconductor devices. However, the prospect of mechanically form ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=852642

140. The Origins of Random Telegraph Noise in Highly Scaled SiON nMOSFETs
Topic: Semiconductors
Published: 10/17/2008
Authors: Jason P Campbell, Jin Qin, Kin P Cheung, Liangchun Yu, John S Suehle, A Oates, Kuang Sheng
Abstract: Random telegraph noise (RTN) has recently become an important issue in advanced circuit performance. It has also recently been used as a tool for gate dielectric defect profiling. In this work, we show that the widely accepted model thought to govern ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=33210



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