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Displaying records 131 to 140 of 156 records.
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131. Spatial Probing of Traps in nMOSFET with ALD HfO2/SiO2 Stacks Using Low Frequency Noise Characteristics
Topic: Semiconductors
Published: 10/15/2006
Authors: Hao Xiong, John S Suehle
Abstract: Low frequency (LF) noise is studied in nMOSFET with various HfO2 dielectric or interfacial layer (IL) thickness and TiN as gate electrode material. LF noise increases with HfO2 thickness, and decreases with IL SiO2 thickness. Traps at the channel and ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32515

132. Spectroscopic charge pumping investigation of the amphoteric nature of Si/SiO2 interface states
Topic: Semiconductors
Published: 6/6/2011
Authors: Jason T Ryan, Liangchun Yu, Jae Han, Joseph J Kopanski, Kin P Cheung, Fei Zhang, Chen Wang, Jason P Campbell, John S Suehle
Abstract: The amphoteric nature of Si/SiO2 interface states in submicron sized metal-oxide-silicon-field-effect-transistors is observed using an enhanced spectroscopic charge pumping method. The method‰s simplicity and high sensitivity makes it a powerful too ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908429

133. Spray Deposited Poly-3-hexylthiophene Thin Film Transistors
Topic: Semiconductors
Published: 12/11/2009
Authors: Calvin Chan, Lee J Richter, David Germack, Brad Conrad, Daniel A Fischer, Dean M DeLongchamp, David J Gundlach
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905385

134. Status of Interagency Advanced Power Group (IAPG), Electrical Systems Working Group (ESWG)
Topic: Semiconductors
Published: 12/1/2010
Author: Allen R Hefner Jr
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908470

135. Steady-state and transient photoconductivity in c-axis GaN nanowires grown by nitrogen-plasma-assisted molecular beam epitaxy
Topic: Semiconductors
Published: 2/12/2010
Authors: Norman A Sanford, Paul Timothy Blanchard, Kristine A Bertness, Lorelle Mansfield, John B Schlager, Aric Warner Sanders, Alexana Roshko, Beau Burton, Steven George
Abstract: Analysis of steady-state and transient photoconductivity measurements at room temperature performed on c-axis oriented GaN nanowires yielded estimates of free carrier concentration, drift, mobility, surface band bending, and surface capture coefficie ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=33133

136. Structural and Electrical Characterization of Flip Chip Laminated omega-functionalized thiols
Topic: Semiconductors
Published: 4/15/2010
Authors: Mariona Coll Bau, Oana Jurchescu, Nadine Emily Gergel-Hackett, Curt A Richter, Christina Ann Hacker
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907067

137. Structural, Electronic, and Dielectric Properties of Ultrathin Zirconia Films on Silicon
Topic: Semiconductors
Published: 11/17/2005
Authors: Safak Sayan, Nhan V Nguyen, James R. Ehrstein, Tom Emge, Eric Garfunkel, Mark Croft, X Zhao, David V Vanderbilt, Ira Levin, Evgeni Gusev, Hyunjung Grace Kim
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32146

138. Synchrotron-Based Measurement of the Impact of Thermal Cycling on the Evolution of Stresses in Cu Through-Silicon Via
Topic: Semiconductors
Published: 6/30/2014
Authors: Chukwudi Azubuike Okoro, Lyle E Levine, Ruqing Xu, Klaus Hummler, Yaw S Obeng
Abstract: One of the main causes of failure during the lifetime of microelectronics devices is their exposure to fluctuating temperatures. In this work, synchrotron-based X-ray micro-diffraction is used to study the evolution of stresses in copper through-sili ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=915982

139. Tensile measurement of single crystal gallium nitride nanowires on MEMS test stages
Topic: Semiconductors
Published: 4/18/2010
Authors: J. J. Brown, A. I. Baca, Kristine A Bertness, D. A. Dikin, R. S. Ruoff, Victor M. Bright
Abstract: This paper reports the first direct tensile tests on nearly defect free, n-type (Si-doped) gallium nitride single crystal nanowires. Here, for the first time, nanowires have been integrated with actuated, active microelectromechanical (MEMS) structur ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=902539

140. Terahertz Mobility Measurements on P3HT Films: Device Comparison, Molecular Weight and Film Processing Effects
Topic: Semiconductors
Published: Date unknown
Authors: Okan Esenturk, Joseph S Melinger
Abstract: We report the first direct comparison of relative carrier mobilities in semiconducting organic polymer films measured using non-contact optical pump terahertz probe spectroscopy to those reported in electrical device studies. Relative transient sign ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=841108



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