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Topic Area: Semiconductors
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Displaying records 121 to 130 of 152 records.
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121. STRESS-INDUCED DEFECT GENERATION IN HFO2/SIO2 STACKS OBSERVED BY USING CHARGE PUMPING AND LOW FREQUENCY NOISE MEASUREMENTS
Topic: Semiconductors
Published: 4/30/2008
Authors: Hao Xiong, Dawei Heh, Shuo Yang, Moshe Gurfinkel, Gennadi Bersuker, D. E Ioannou, Curt A Richter, Kin P Cheung, John S Suehle
Abstract: A novel approach combining the low frequency drain current noise and the frequency-dependent charge pumping techniques has been employed to extract the trap densities in both the interfacial SiO2 layer and high-k layer in the n-type MOSFETs with HfO2 ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32962

122. Semiconductor Factory and Equipment Time Synchronization
Series: NIST Interagency/Internal Report (NISTIR)
Report Number: 7088
Topic: Semiconductors
Published: 2/25/2004
Authors: YaShian Li-Baboud, Brad Van Eck
Abstract: With the advent of e-manufacturing including automated process control (APC), such as fault detection classification (FDC), more stringent accuracy requirements for time stamps are required to perform analysis intended for process and business critic ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31600

123. Silicon Nanowire NVM Cell Using High-k Dielectric Charge Storage Layer
Topic: Semiconductors
Published: 12/5/2008
Authors: Xiaoxiao Zhu, Yang Yang, Qiliang Li, D. E Ioannou, John S Suehle, Curt A Richter
Abstract: Si nanowire (SiNW) channel non-volatile memory (NVM) cells were fabricated by a 'self-alignment' process. First, a layer of thermal SiO2 was grown on a silicon wafer by dry oxidation, and the SiNWs were then grown by chemical vapor deposition in pre- ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=33041

124. Silicon-based Molecular Electronics in the Post-Hype Era
Topic: Semiconductors
Published: 4/8/2011
Author: Christina Ann Hacker
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908431

125. Small Angle X-Ray Scattering Measurements of Spatial Dependent Linewidth in Dense Nanoline Gratings
Topic: Semiconductors
Published: 3/16/2009
Authors: Chengqing C. Wang, Wei-En Fu, Bin Li, Huai Huang, Christopher L Soles, Eric K Lin, Wen-Li Wu, Paul S. Ho, Michael W. Cresswell
Abstract: Small angle X-ray scattering (SAXS) was used to characterize the line cross section of nanoline gratings fabricated using electron beam lithography (EBL) patterning followed by anisotropic wet etching into silicon single crystal. SAXS results at nor ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=854130

126. Spatial Distributions of Trapping Centers in HfO2/SiO2 Stacked Dielectrics
Topic: Semiconductors
Published: 4/1/2006
Authors: Da-Wei Heh, Eric M. Vogel, J B Bernstein, Chadwin Yang, George A. Brown, Gennadi Bersuker, Pui-Yee Hung, Alain C. Diebold
Abstract: An analysis methodology basd on charge pumping (CP) measurement was applied to extract the spatial depth profile of traps in the SiO2/HfO2 gate stacks. This analysis indicates that by changing CP measurement parameters it is possible to probe traps a ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32009

127. Spatial Probing of Traps in nMOSFET with ALD HfO2/SiO2 Stacks Using Low Frequency Noise Characteristics
Topic: Semiconductors
Published: 10/15/2006
Authors: Hao Xiong, John S Suehle
Abstract: Low frequency (LF) noise is studied in nMOSFET with various HfO2 dielectric or interfacial layer (IL) thickness and TiN as gate electrode material. LF noise increases with HfO2 thickness, and decreases with IL SiO2 thickness. Traps at the channel and ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32515

128. Spectroscopic charge pumping investigation of the amphoteric nature of Si/SiO2 interface states
Topic: Semiconductors
Published: 6/6/2011
Authors: Jason T Ryan, Liangchun Yu, Jae Han, Joseph J Kopanski, Kin P Cheung, Fei Zhang, Chen Wang, Jason P Campbell, John S Suehle
Abstract: The amphoteric nature of Si/SiO2 interface states in submicron sized metal-oxide-silicon-field-effect-transistors is observed using an enhanced spectroscopic charge pumping method. The method‰s simplicity and high sensitivity makes it a powerful too ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908429

129. Spray Deposited Poly-3-hexylthiophene Thin Film Transistors
Topic: Semiconductors
Published: 12/11/2009
Authors: Calvin Chan, Lee J Richter, David Germack, Brad Conrad, Daniel A Fischer, Dean M DeLongchamp, David J Gundlach
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905385

130. Status of Interagency Advanced Power Group (IAPG), Electrical Systems Working Group (ESWG)
Topic: Semiconductors
Published: 12/1/2010
Author: Allen R Hefner Jr
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908470



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