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Topic Area: Semiconductors
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Displaying records 121 to 130 of 150 records.
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121. Silicon Nanowire NVM Cell Using High-k Dielectric Charge Storage Layer
Topic: Semiconductors
Published: 12/5/2008
Authors: Xiaoxiao Zhu, Yang Yang, Qiliang Li, D. E Ioannou, John S Suehle, Curt A Richter
Abstract: Si nanowire (SiNW) channel non-volatile memory (NVM) cells were fabricated by a 'self-alignment' process. First, a layer of thermal SiO2 was grown on a silicon wafer by dry oxidation, and the SiNWs were then grown by chemical vapor deposition in pre- ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=33041

122. Silicon-based Molecular Electronics in the Post-Hype Era
Topic: Semiconductors
Published: 4/8/2011
Author: Christina Ann Hacker
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908431

123. Small Angle X-Ray Scattering Measurements of Spatial Dependent Linewidth in Dense Nanoline Gratings
Topic: Semiconductors
Published: 3/16/2009
Authors: Chengqing C. Wang, Wei-En Fu, Bin Li, Huai Huang, Christopher L Soles, Eric K Lin, Wen-Li Wu, Paul S. Ho, Michael W. Cresswell
Abstract: Small angle X-ray scattering (SAXS) was used to characterize the line cross section of nanoline gratings fabricated using electron beam lithography (EBL) patterning followed by anisotropic wet etching into silicon single crystal. SAXS results at nor ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=854130

124. Spatial Distributions of Trapping Centers in HfO2/SiO2 Stacked Dielectrics
Topic: Semiconductors
Published: 4/1/2006
Authors: Da-Wei Heh, Eric M. Vogel, J B Bernstein, Chadwin Yang, George A. Brown, Gennadi Bersuker, Pui-Yee Hung, Alain C. Diebold
Abstract: An analysis methodology basd on charge pumping (CP) measurement was applied to extract the spatial depth profile of traps in the SiO2/HfO2 gate stacks. This analysis indicates that by changing CP measurement parameters it is possible to probe traps a ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32009

125. Spatial Probing of Traps in nMOSFET with ALD HfO2/SiO2 Stacks Using Low Frequency Noise Characteristics
Topic: Semiconductors
Published: 10/15/2006
Authors: Hao Xiong, John S Suehle
Abstract: Low frequency (LF) noise is studied in nMOSFET with various HfO2 dielectric or interfacial layer (IL) thickness and TiN as gate electrode material. LF noise increases with HfO2 thickness, and decreases with IL SiO2 thickness. Traps at the channel and ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32515

126. Spectroscopic charge pumping investigation of the amphoteric nature of Si/SiO2 interface states
Topic: Semiconductors
Published: 6/6/2011
Authors: Jason T Ryan, Liangchun Yu, Jae Han, Joseph J Kopanski, Kin P Cheung, Fei Zhang, Chen Wang, Jason P Campbell, John S Suehle
Abstract: The amphoteric nature of Si/SiO2 interface states in submicron sized metal-oxide-silicon-field-effect-transistors is observed using an enhanced spectroscopic charge pumping method. The method‰s simplicity and high sensitivity makes it a powerful too ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908429

127. Spray Deposited Poly-3-hexylthiophene Thin Film Transistors
Topic: Semiconductors
Published: 12/11/2009
Authors: Calvin Chan, Lee J Richter, David Germack, Brad Conrad, Daniel A Fischer, Dean M DeLongchamp, David J Gundlach
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905385

128. Status of Interagency Advanced Power Group (IAPG), Electrical Systems Working Group (ESWG)
Topic: Semiconductors
Published: 12/1/2010
Author: Allen R Hefner Jr
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908470

129. Steady-state and transient photoconductivity in c-axis GaN nanowires grown by nitrogen-plasma-assisted molecular beam epitaxy
Topic: Semiconductors
Published: 2/12/2010
Authors: Norman A Sanford, Paul Timothy Blanchard, Kristine A Bertness, Lorelle Mansfield, John B Schlager, Aric Warner Sanders, Alexana Roshko, Beau Burton, Steven George
Abstract: Analysis of steady-state and transient photoconductivity measurements at room temperature performed on c-axis oriented GaN nanowires yielded estimates of free carrier concentration, drift, mobility, surface band bending, and surface capture coefficie ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=33133

130. Structural and Electrical Characterization of Flip Chip Laminated omega-functionalized thiols
Topic: Semiconductors
Published: 4/15/2010
Authors: Mariona Coll Bau, Oana Jurchescu, Nadine Emily Gergel-Hackett, Curt A Richter, Christina Ann Hacker
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907067



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