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Topic Area: Semiconductors
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Displaying records 111 to 120 of 152 records.
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111. Probing Single Nanometer-Scale Pores with Polymeric Molecular Rulers
Topic: Semiconductors
Published: 4/2/2010
Authors: Sarah E Henrickson, Edmund A DiMarzio, Qian Wang, Vincent M Stanford, John J Kasianowicz
Abstract: It has been shown that individual molecules of single stranded DNA can be driven electrophoretically through a single Staphylococcus aureus ?-hemolysin ion channel. Polynucleotides thread through the channel as extended chains and the polymer-induced ...

112. RF, Analog and Mixed Signal Technologies for Communication ICs - an ITRS Perspective
Topic: Semiconductors
Published: 10/10/2006
Authors: W M. Huang, Herbert S Bennett, Julio Costa, Peter Cottrell, Anthony A. Immorlica, Jan-Erik Mueller, Marco Racanelli, Hisashi Shichijo, Charles E. Weitzel, Bin Zhao

113. RF, Analog, and Mixed Signal Technologies for Communication ICs - An ITRS Perspective
Topic: Semiconductors
Published: 10/10/2006
Authors: Margaret Huang, Herbert S Bennett, Julio Costa, Peter Cotrell, Anthony A. Immorlica, Jan-Erik Meuller, Charles E. Weitzel, Marco Racaneli, Hisashi Schichijo, Bin Zhao
Abstract: The International Technology Roadmap for Semiconductor (ITRS) Radio Frequency and Analog/Mixed-Signal (RF and AMS) Wireless Technology Working Group (TWG) addresses device technologies for wireless communications covering both silicon-based and III-V ...

114. RM 8111: Development of a Prototype Linewidth Standard
Series: Journal of Research (NIST JRES)
Topic: Semiconductors
Published: 5/1/2006
Authors: Michael W Cresswell, William Gutherie, R. Dixon, Richard A Allen, Christine E. Murabito, Joaquin (Jack) Martinez
Abstract: Staff of the Semiconductor Electronics Division, the Information Technology Laboratory, and the Precision Engineering Laboratory at NIST, in collaboration with VLSI Standards, Inc., of San Jose, California, have developed a new generation of prototyp ...

115. Radio Frequency and Analog/Mixed-Signal Technologies
Topic: Semiconductors
Published: 1/20/2012
Authors: Herbert S Bennett, John J. Pekarik
Abstract: This 2011 roadmap for radio frequency and analog/mixed-signal (RF and AMS) technologies presents the challenges, technology requirements, and potential solutions for the basic technology elements (transistors and passive devices). RF and AMS technolo ...

116. Raman and Magneto Transport Studies of MBE Grown B-FeSi2, B-(Fe1-xCrx)Si2, and B-(Fe1-xCox)Si2
Topic: Semiconductors
Published: 5/1/2002
Authors: A Srujana, A Wadhawan, K Srikala, R L Cottier, W Zhao, Christopher Littler, J M. Perez, T D Golding, Anthony Birdwell, W Henrion, M Rebien, P Stauss, R Glosser

117. Relative Photon-to-Carrier Efficiencies of Alternating Nanolayers of Zinc Phthalocyanine and C60 Multilayer Films Assessed by Time-Resolved Terahertz Spectroscopy
Topic: Semiconductors
Published: 10/1/2009
Authors: Okan Esenturk, Joseph S Melinger, Paul A. Lane, Edwin J Heilweil
Abstract: Alternating multi-layer and 1:1 blended films of zinc phthalocyanine (ZnPc)and buckminsterfullerene (C60) were investigated as model active layers for solar cells by Time-Resolved Terahertz Spectroscopy (TRTS). Relative photon-to-carrier efficiencies ...

118. Reliability Monitoring For Highly Leaky Devices
Topic: Semiconductors
Published: 5/31/2013
Authors: Jason T Ryan, Jason P Campbell, Kin P Cheung, John S Suehle, Richard Southwick, Anthony Oates
Abstract: We demonstrate a new charge pumping (CP) methodology, frequency modulated CP (FMCP), that robustly treats metrology challenges associated with high gate leakage current. By moving to an AC coupled measurement, we are able to easily resolve small CP s ...

119. Reliability and Characterization Challenges for Nano-Scale Electronic Devices
Topic: Semiconductors
Published: 3/14/2007
Authors: John S Suehle, Hao Xiong, Moshe Gurfinkel
Abstract: Scaling electronic devices to nano-scale dimensions may introduce unforeseen physical mechanisms that may seriously compromise device reliability. It has been discussed that as individual atoms comprise a larger fraction of the actual device area, de ...

120. Reliability of Ultra-Thin Silicon Dioxide Under Substrate Hot-Electronic, Substrate Hot-Hole, and Tunneling Stress
Topic: Semiconductors
Published: 11/1/2001
Authors: Eric M. Vogel, Monica D Edelstein, John S Suehle
Abstract: Substrate hot-electron and substrate hot-hole injection experiments are used to provide insight into defect generation and breakdown of ultra-thin silicon dioxide under constant voltage tunneling stress. Results from substrate hot-electron injection ...

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