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Topic Area: Semiconductors
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Displaying records 111 to 120 of 144 records.
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111. Relative Photon-to-Carrier Efficiencies of Alternating Nanolayers of Zinc Phthalocyanine and C60 Multilayer Films Assessed by Time-Resolved Terahertz Spectroscopy
Topic: Semiconductors
Published: 10/1/2009
Authors: Okan Esenturk, Joseph S Melinger, Paul A. Lane, Edwin J Heilweil
Abstract: Alternating multi-layer and 1:1 blended films of zinc phthalocyanine (ZnPc)and buckminsterfullerene (C60) were investigated as model active layers for solar cells by Time-Resolved Terahertz Spectroscopy (TRTS). Relative photon-to-carrier efficiencies ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=902140

112. Reliability Monitoring For Highly Leaky Devices
Topic: Semiconductors
Published: 5/31/2013
Authors: Jason T Ryan, Jason P Campbell, Kin P Cheung, John S Suehle, Richard Southwick, Anthony Oates
Abstract: We demonstrate a new charge pumping (CP) methodology, frequency modulated CP (FMCP), that robustly treats metrology challenges associated with high gate leakage current. By moving to an AC coupled measurement, we are able to easily resolve small CP s ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913575

113. Reliability and Characterization Challenges for Nano-Scale Electronic Devices
Topic: Semiconductors
Published: 3/14/2007
Authors: John S Suehle, Hao Xiong, Moshe Gurfinkel
Abstract: Scaling electronic devices to nano-scale dimensions may introduce unforeseen physical mechanisms that may seriously compromise device reliability. It has been discussed that as individual atoms comprise a larger fraction of the actual device area, de ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32607

114. Reliability of Ultra-Thin Silicon Dioxide Under Substrate Hot-Electronic, Substrate Hot-Hole, and Tunneling Stress
Topic: Semiconductors
Published: 11/1/2001
Authors: Eric M. Vogel, Monica D Edelstein, John S Suehle
Abstract: Substrate hot-electron and substrate hot-hole injection experiments are used to provide insight into defect generation and breakdown of ultra-thin silicon dioxide under constant voltage tunneling stress. Results from substrate hot-electron injection ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=25004

115. STRESS-INDUCED DEFECT GENERATION IN HFO2/SIO2 STACKS OBSERVED BY USING CHARGE PUMPING AND LOW FREQUENCY NOISE MEASUREMENTS
Topic: Semiconductors
Published: 4/30/2008
Authors: Hao Xiong, Dawei Heh, Shuo Yang, Moshe Gurfinkel, Gennadi Bersuker, D. E Ioannou, Curt A Richter, Kin P Cheung, John S Suehle
Abstract: A novel approach combining the low frequency drain current noise and the frequency-dependent charge pumping techniques has been employed to extract the trap densities in both the interfacial SiO2 layer and high-k layer in the n-type MOSFETs with HfO2 ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32962

116. Semiconductor Factory and Equipment Time Synchronization
Series: NIST Interagency/Internal Report (NISTIR)
Report Number: 7088
Topic: Semiconductors
Published: 2/25/2004
Authors: YaShian Li-Baboud, Brad Van Eck
Abstract: With the advent of e-manufacturing including automated process control (APC), such as fault detection classification (FDC), more stringent accuracy requirements for time stamps are required to perform analysis intended for process and business critic ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31600

117. Silicon Nanowire NVM Cell Using High-k Dielectric Charge Storage Layer
Topic: Semiconductors
Published: 12/5/2008
Authors: Xiaoxiao Zhu, Yang Yang, Qiliang Li, D. E Ioannou, John S Suehle, Curt A Richter
Abstract: Si nanowire (SiNW) channel non-volatile memory (NVM) cells were fabricated by a 'self-alignment' process. First, a layer of thermal SiO2 was grown on a silicon wafer by dry oxidation, and the SiNWs were then grown by chemical vapor deposition in pre- ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=33041

118. Silicon-based Molecular Electronics in the Post-Hype Era
Topic: Semiconductors
Published: 4/8/2011
Author: Christina Ann Hacker
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908431

119. Small Angle X-Ray Scattering Measurements of Spatial Dependent Linewidth in Dense Nanoline Gratings
Topic: Semiconductors
Published: 3/16/2009
Authors: Chengqing C. Wang, Wei-En Fu, Bin Li, Huai Huang, Christopher L Soles, Eric K Lin, Wen-Li Wu, Paul S. Ho, Michael W. Cresswell
Abstract: Small angle X-ray scattering (SAXS) was used to characterize the line cross section of nanoline gratings fabricated using electron beam lithography (EBL) patterning followed by anisotropic wet etching into silicon single crystal. SAXS results at nor ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=854130

120. Spatial Distributions of Trapping Centers in HfO2/SiO2 Stacked Dielectrics
Topic: Semiconductors
Published: 4/1/2006
Authors: Da-Wei Heh, Eric M. Vogel, J B Bernstein, Chadwin Yang, George A. Brown, Gennadi Bersuker, Pui-Yee Hung, Alain C. Diebold
Abstract: An analysis methodology basd on charge pumping (CP) measurement was applied to extract the spatial depth profile of traps in the SiO2/HfO2 gate stacks. This analysis indicates that by changing CP measurement parameters it is possible to probe traps a ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32009



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