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Topic Area: Semiconductors
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Displaying records 111 to 120 of 151 records.
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111. RF, Analog and Mixed Signal Technologies for Communication ICs - an ITRS Perspective
Topic: Semiconductors
Published: 10/10/2006
Authors: W M. Huang, Herbert S Bennett, Julio Costa, Peter Cottrell, Anthony A. Immorlica, Jan-Erik Mueller, Marco Racanelli, Hisashi Shichijo, Charles E. Weitzel, Bin Zhao
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32241

112. RF, Analog, and Mixed Signal Technologies for Communication ICs - An ITRS Perspective
Topic: Semiconductors
Published: 10/10/2006
Authors: Margaret Huang, Herbert S Bennett, Julio Costa, Peter Cotrell, Anthony A. Immorlica, Jan-Erik Meuller, Charles E. Weitzel, Marco Racaneli, Hisashi Schichijo, Bin Zhao
Abstract: The International Technology Roadmap for Semiconductor (ITRS) Radio Frequency and Analog/Mixed-Signal (RF and AMS) Wireless Technology Working Group (TWG) addresses device technologies for wireless communications covering both silicon-based and III-V ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32426

113. RM 8111: Development of a Prototype Linewidth Standard
Series: Journal of Research (NIST JRES)
Topic: Semiconductors
Published: 5/1/2006
Authors: Michael W Cresswell, William Gutherie, R. Dixon, Richard A Allen, Christine E. Murabito, Joaquin (Jack) Martinez
Abstract: Staff of the Semiconductor Electronics Division, the Information Technology Laboratory, and the Precision Engineering Laboratory at NIST, in collaboration with VLSI Standards, Inc., of San Jose, California, have developed a new generation of prototyp ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32585

114. Radio Frequency and Analog/Mixed-Signal Technologies
Topic: Semiconductors
Published: 1/20/2012
Authors: Herbert S Bennett, John J. Pekarik
Abstract: This 2011 roadmap for radio frequency and analog/mixed-signal (RF and AMS) technologies presents the challenges, technology requirements, and potential solutions for the basic technology elements (transistors and passive devices). RF and AMS technolo ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910916

115. Raman and Magneto Transport Studies of MBE Grown B-FeSi2, B-(Fe1-xCrx)Si2, and B-(Fe1-xCox)Si2
Topic: Semiconductors
Published: 5/1/2002
Authors: A Srujana, A Wadhawan, K Srikala, R L Cottier, W Zhao, Christopher Littler, J M. Perez, T D Golding, Anthony Birdwell, W Henrion, M Rebien, P Stauss, R Glosser
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=906323

116. Relative Photon-to-Carrier Efficiencies of Alternating Nanolayers of Zinc Phthalocyanine and C60 Multilayer Films Assessed by Time-Resolved Terahertz Spectroscopy
Topic: Semiconductors
Published: 10/1/2009
Authors: Okan Esenturk, Joseph S Melinger, Paul A. Lane, Edwin J Heilweil
Abstract: Alternating multi-layer and 1:1 blended films of zinc phthalocyanine (ZnPc)and buckminsterfullerene (C60) were investigated as model active layers for solar cells by Time-Resolved Terahertz Spectroscopy (TRTS). Relative photon-to-carrier efficiencies ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=902140

117. Reliability Monitoring For Highly Leaky Devices
Topic: Semiconductors
Published: 5/31/2013
Authors: Jason T Ryan, Jason P Campbell, Kin P Cheung, John S Suehle, Richard Southwick, Anthony Oates
Abstract: We demonstrate a new charge pumping (CP) methodology, frequency modulated CP (FMCP), that robustly treats metrology challenges associated with high gate leakage current. By moving to an AC coupled measurement, we are able to easily resolve small CP s ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913575

118. Reliability and Characterization Challenges for Nano-Scale Electronic Devices
Topic: Semiconductors
Published: 3/14/2007
Authors: John S Suehle, Hao Xiong, Moshe Gurfinkel
Abstract: Scaling electronic devices to nano-scale dimensions may introduce unforeseen physical mechanisms that may seriously compromise device reliability. It has been discussed that as individual atoms comprise a larger fraction of the actual device area, de ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32607

119. Reliability of Ultra-Thin Silicon Dioxide Under Substrate Hot-Electronic, Substrate Hot-Hole, and Tunneling Stress
Topic: Semiconductors
Published: 11/1/2001
Authors: Eric M. Vogel, Monica D Edelstein, John S Suehle
Abstract: Substrate hot-electron and substrate hot-hole injection experiments are used to provide insight into defect generation and breakdown of ultra-thin silicon dioxide under constant voltage tunneling stress. Results from substrate hot-electron injection ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=25004

120. STRESS-INDUCED DEFECT GENERATION IN HFO2/SIO2 STACKS OBSERVED BY USING CHARGE PUMPING AND LOW FREQUENCY NOISE MEASUREMENTS
Topic: Semiconductors
Published: 4/30/2008
Authors: Hao Xiong, Dawei Heh, Shuo Yang, Moshe Gurfinkel, Gennadi Bersuker, D. E Ioannou, Curt A Richter, Kin P Cheung, John S Suehle
Abstract: A novel approach combining the low frequency drain current noise and the frequency-dependent charge pumping techniques has been employed to extract the trap densities in both the interfacial SiO2 layer and high-k layer in the n-type MOSFETs with HfO2 ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32962



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