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Topic Area: Semiconductors
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Displaying records 111 to 120 of 147 records.
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111. Radio Frequency and Analog/Mixed-Signal Technologies
Topic: Semiconductors
Published: 1/20/2012
Authors: Herbert S Bennett, John J. Pekarik
Abstract: This 2011 roadmap for radio frequency and analog/mixed-signal (RF and AMS) technologies presents the challenges, technology requirements, and potential solutions for the basic technology elements (transistors and passive devices). RF and AMS technolo ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910916

112. Raman and Magneto Transport Studies of MBE Grown B-FeSi2, B-(Fe1-xCrx)Si2, and B-(Fe1-xCox)Si2
Topic: Semiconductors
Published: 5/1/2002
Authors: A Srujana, A Wadhawan, K Srikala, R L Cottier, W Zhao, Christopher Littler, J M. Perez, T D Golding, Anthony Birdwell, W Henrion, M Rebien, P Stauss, R Glosser
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=906323

113. Relative Photon-to-Carrier Efficiencies of Alternating Nanolayers of Zinc Phthalocyanine and C60 Multilayer Films Assessed by Time-Resolved Terahertz Spectroscopy
Topic: Semiconductors
Published: 10/1/2009
Authors: Okan Esenturk, Joseph S Melinger, Paul A. Lane, Edwin J Heilweil
Abstract: Alternating multi-layer and 1:1 blended films of zinc phthalocyanine (ZnPc)and buckminsterfullerene (C60) were investigated as model active layers for solar cells by Time-Resolved Terahertz Spectroscopy (TRTS). Relative photon-to-carrier efficiencies ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=902140

114. Reliability Monitoring For Highly Leaky Devices
Topic: Semiconductors
Published: 5/31/2013
Authors: Jason T Ryan, Jason P Campbell, Kin P Cheung, John S Suehle, Richard Southwick, Anthony Oates
Abstract: We demonstrate a new charge pumping (CP) methodology, frequency modulated CP (FMCP), that robustly treats metrology challenges associated with high gate leakage current. By moving to an AC coupled measurement, we are able to easily resolve small CP s ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913575

115. Reliability and Characterization Challenges for Nano-Scale Electronic Devices
Topic: Semiconductors
Published: 3/14/2007
Authors: John S Suehle, Hao Xiong, Moshe Gurfinkel
Abstract: Scaling electronic devices to nano-scale dimensions may introduce unforeseen physical mechanisms that may seriously compromise device reliability. It has been discussed that as individual atoms comprise a larger fraction of the actual device area, de ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32607

116. Reliability of Ultra-Thin Silicon Dioxide Under Substrate Hot-Electronic, Substrate Hot-Hole, and Tunneling Stress
Topic: Semiconductors
Published: 11/1/2001
Authors: Eric M. Vogel, Monica D Edelstein, John S Suehle
Abstract: Substrate hot-electron and substrate hot-hole injection experiments are used to provide insight into defect generation and breakdown of ultra-thin silicon dioxide under constant voltage tunneling stress. Results from substrate hot-electron injection ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=25004

117. STRESS-INDUCED DEFECT GENERATION IN HFO2/SIO2 STACKS OBSERVED BY USING CHARGE PUMPING AND LOW FREQUENCY NOISE MEASUREMENTS
Topic: Semiconductors
Published: 4/30/2008
Authors: Hao Xiong, Dawei Heh, Shuo Yang, Moshe Gurfinkel, Gennadi Bersuker, D. E Ioannou, Curt A Richter, Kin P Cheung, John S Suehle
Abstract: A novel approach combining the low frequency drain current noise and the frequency-dependent charge pumping techniques has been employed to extract the trap densities in both the interfacial SiO2 layer and high-k layer in the n-type MOSFETs with HfO2 ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32962

118. Semiconductor Factory and Equipment Time Synchronization
Series: NIST Interagency/Internal Report (NISTIR)
Report Number: 7088
Topic: Semiconductors
Published: 2/25/2004
Authors: YaShian Li-Baboud, Brad Van Eck
Abstract: With the advent of e-manufacturing including automated process control (APC), such as fault detection classification (FDC), more stringent accuracy requirements for time stamps are required to perform analysis intended for process and business critic ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31600

119. Silicon Nanowire NVM Cell Using High-k Dielectric Charge Storage Layer
Topic: Semiconductors
Published: 12/5/2008
Authors: Xiaoxiao Zhu, Yang Yang, Qiliang Li, D. E Ioannou, John S Suehle, Curt A Richter
Abstract: Si nanowire (SiNW) channel non-volatile memory (NVM) cells were fabricated by a 'self-alignment' process. First, a layer of thermal SiO2 was grown on a silicon wafer by dry oxidation, and the SiNWs were then grown by chemical vapor deposition in pre- ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=33041

120. Silicon-based Molecular Electronics in the Post-Hype Era
Topic: Semiconductors
Published: 4/8/2011
Author: Christina Ann Hacker
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908431



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