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Topic Area: Semiconductors
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Displaying records 11 to 20 of 135 records.
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11. Spectroscopic charge pumping investigation of the amphoteric nature of Si/SiO2 interface states
Topic: Semiconductors
Published: 6/6/2011
Authors: Jason T Ryan, Liangchun Yu, Jae Han, Joseph J Kopanski, Kin P Cheung, Fei Zhang, Chen Wang, Jason P Campbell, John S Suehle
Abstract: The amphoteric nature of Si/SiO2 interface states in submicron sized metal-oxide-silicon-field-effect-transistors is observed using an enhanced spectroscopic charge pumping method. The method’s simplicity and high sensitivity makes it a powerful too ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908429

12. Fabrication and characterization of silicon-based molecular electronic devices
Topic: Semiconductors
Published: 5/21/2011
Authors: Christina Ann Hacker, Michael A Walsh, Sujitra Jeanie Pookpanratana, Mariona Coll Bau, Curt A Richter
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908433

13. Electrically Detected Magnetic Resonance in Dielectric Semiconductor Systems of Current Interest
Topic: Semiconductors
Published: 5/1/2011
Authors: P. M. Lenahan, Corey Cochrane, Jason P Campbell, Jason T Ryan
Abstract: Several electrically detected magnetic resonance techniques provide insight into the physical and chemical structure of technologically significant deep level defects in solid state electronics. Spin dependent recombination is sensitive to deep level ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=909230

14. Investigation of SiO2/HfO2 stacks for flash memory applications
Topic: Semiconductors
Published: 4/28/2011
Authors: Nhan V Nguyen, Bashwar Chakrabarti
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908443

15. Optical illumination optimization for patterned defect inspection
Topic: Semiconductors
Published: 4/20/2011
Authors: Bryan M Barnes, Richard Quintanilha, Martin Yeungjoon Sohn, Hui Zhou, Richard M Silver
Abstract: Rapidly decreasing critical dimensions (CD) for semiconductor devices drive the study of improved methods for the detection of defects within patterned areas. As reduced CDs are being achieved through directional patterning, additional constraints a ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908276

16. Silicon-based Molecular Electronics in the Post-Hype Era
Topic: Semiconductors
Published: 4/8/2011
Author: Christina Ann Hacker
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908431

17. Photoemission Threshold Spectroscopy: MOS Band alignments
Topic: Semiconductors
Published: 4/7/2011
Author: Nhan V Nguyen
Abstract: In this talk I will 1) briefly review SED’s history of the optical thin metrology project, 2) describe the principle of internal photoemission (IPE) and the applications to determine the band alignments of metal-oxide-semiconductor structures, an ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908441

18. Development, Performance and Applications of 4.5 kV SiC JBS Diodes
Topic: Semiconductors
Published: 3/22/2011
Author: Allen R Hefner Jr
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908466

19. Status of Interagency Advanced Power Group (IAPG), Electrical Systems Working Group (ESWG)
Topic: Semiconductors
Published: 12/1/2010
Author: Allen R Hefner Jr
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908470

20. US Anti-Counterfeiting Standards Development Activities: An Overview
Topic: Semiconductors
Published: 12/1/2010
Authors: Yaw S Obeng, Eric D Simmon, YaShian Li-Baboud
Abstract: Counterfeit electronics components impact performance, hence can be viewed as a reliability concern. Several different strategies have been proposed to mitigate the penetration and impact of counterfeits on the supply chain. Standards afford effe ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907215