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Topic Area: Semiconductors
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Displaying records 11 to 20 of 144 records.
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11. Measurement Science for "More-Than-Moore" Technology Reliability Assessments
Topic: Semiconductors
Published: 10/12/2012
Authors: Chukwudi Azubuike Okoro, Jungjoon Ahn, Meagan V. Kelso, Pavel Kabos, Joseph J Kopanski, Yaw S Obeng
Abstract: In this paper, we will present an overview of metrology issues and some of the techniques currently under development in our group at NIST, aimed at understanding some of the potential performance limiting issues in such highly integrated systems ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911714

12. Current Compliance Circuit to Improve Variation in ON State Characteristics and to Minimize RESET Current
Topic: Semiconductors
Published: 10/7/2012
Authors: Pragya Rasmi Shrestha, Adaku Ochia, Jason P Campbell, Canute Irwin Vaz, Jihong Kim, Kin P Cheung, Helmut Baumgart, Gary Harris
Abstract: The wide distribution of ON and OFF values and high SET current in resistive memory is attributed to the high current overshoot during the SET process. In this paper we show a circuit which is capable of precisely limiting the current during SET proc ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912998

13. Physical Model for Random Telegraph Noise Amplitudes and Implications
Topic: Semiconductors
Published: 6/12/2012
Authors: Richard G. Southwick, Kin P Cheung, Jason P Campbell, Serghei Drozdov, Jason T Ryan, John S Suehle, Anthony Oates
Abstract: Random Telegraph Noise (RTN) has been shown to surpass random dopant fluctuations as a cause for decananometer device variability, through the measurement of a large number of ultra-scaled devices [1]. The most worrisome aspect of RTN is the tail of ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911514

14. Radio Frequency and Analog/Mixed-Signal Technologies
Topic: Semiconductors
Published: 1/20/2012
Authors: Herbert S Bennett, John J. Pekarik
Abstract: This 2011 roadmap for radio frequency and analog/mixed-signal (RF and AMS) technologies presents the challenges, technology requirements, and potential solutions for the basic technology elements (transistors and passive devices). RF and AMS technolo ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910916

15. ITRS Chapter: RF and A/MS Technologies
Topic: Semiconductors
Published: 1/12/2012
Authors: Herbert S Bennett, John J. Pekarik
Abstract: Radio frequency and analog/mixed-signal (RF and A/MS) technologies are essential and critical technologies for the rapidly diversifying semiconductor market that comprises many more applications than the wireless and wire-line communications mark ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=909850

16. MEMS
Topic: Semiconductors
Published: 1/12/2012
Author: Michael Gaitan
Abstract: Micro-Electro-Mechanical Systems (MEMS) are devices that are fabricated using techniques similar to those used for integrated circuits (ICs) to create micrometer-sized mechanical structures (suspended bridges, cantilevers, membranes, fluid channels ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910072

17. Frontiers of Characterization and Metrology for Nanoelectronics: 2011
Topic: Semiconductors
Published: 12/28/2011
Authors: David G Seiler, Alain C. Diebold, Robert McDonald, Amal Chabli, Erik M Secula
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910545

18. More than Moore or More Moore: a SWOT analysis
Topic: Semiconductors
Published: 12/28/2011
Authors: Herbert S Bennett, G. Dan Hutcheson
Abstract: Over the last decade, the world of semiconductors has broadened its horizon from More Moore and beyond conventional scaling to More than Moore. Some first hypothesized the end of Moore‰s law and the beginning of a new era. They saw it as an OR gate w ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=909225

19. Impact of Electrolyte Deposition Technique on Resistive Pt/Ta2O5/Cu Switch Performance
Topic: Semiconductors
Published: 12/7/2011
Authors: Pragya Rasmi Shrestha, Adaku Ochia, Mohinee Verma, Yuhong Kang, Helmut Baumgart, Marius Orlowski
Abstract:
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=910527

20. Spectroscopic charge pumping investigation of the amphoteric nature of Si/SiO2 interface states
Topic: Semiconductors
Published: 6/6/2011
Authors: Jason T Ryan, Liangchun Yu, Jae Han, Joseph J Kopanski, Kin P Cheung, Fei Zhang, Chen Wang, Jason P Campbell, John S Suehle
Abstract: The amphoteric nature of Si/SiO2 interface states in submicron sized metal-oxide-silicon-field-effect-transistors is observed using an enhanced spectroscopic charge pumping method. The method‰s simplicity and high sensitivity makes it a powerful too ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908429



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