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Topic Area: Semiconductors
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Displaying records 121 to 130 of 144 records.
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121. Traceable Calibration of Critical-dimension Atomic Force Microscope Linewidth Measurements with Nanometer Uncertainty
Topic: Semiconductors
Published: 11/30/2005
Authors: Ronald G Dixson, Richard A Allen, William F Guthrie, Michael W Cresswell
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32210

122. Effect of Nitrogen on Band Alignment in HfSiON Gate Dielectrics
Topic: Semiconductors
Published: 11/22/2005
Authors: Safak Sayan, Nhan V Nguyen, James R. Ehrstein, James J Chambers, Mark R Visokay, Manuel Quevedo-Lopez, Luigi Colombo, T Yoder, Igor Levin, Daniel Fischer, M Paunescu, Ozgur Celik, Eric Garfunkel
Abstract: We have studied the band alignment of HfSiO and HfSiON films by soft x-ray photoemission (SXPS), oxygen K-edge x-ray absorption (XAS), and spectroscopic ellipsometry. Nitridation of HfSiO reduced the band gap by 1.50+- 0.05eV and the valence and cond ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32000

123. Optical Bandgaps and Composition Dependence of Hafnium Aluminate Thin Films grown by Atomic Layer Chemical Vapor Deposition
Topic: Semiconductors
Published: 11/17/2005
Authors: Nhan V Nguyen, Safak Sayan, Igor Levin, James R. Ehrstein, I.J.R. Baumvol, C. Driemeier, L Wielunski, Pui-Yee Hung, Alain C. Diebold
Abstract: Hafnium-aluminate (HfAlO) films grown on Si by Atomic Layer Chemical Vapor Deposition (ALCVD) of different aluminum contents were investigated in this article. Vacuum Ultra-Violet Spectroscopic Ellipsometry (VUV-SE), high Resolution Transmission Elec ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31774

124. Structural, Electronic, and Dielectric Properties of Ultrathin Zirconia Films on Silicon
Topic: Semiconductors
Published: 11/17/2005
Authors: Safak Sayan, Nhan V Nguyen, James R. Ehrstein, Tom Emge, Eric Garfunkel, Mark Croft, X Zhao, David V Vanderbilt, Ira Levin, Evgeni Gusev, Hyunjung Grace Kim
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32146

125. Dependence of Electron Density on Fermi Energy in Compensated N-type Gallium Antimonide
Topic: Semiconductors
Published: 11/11/2005
Authors: Herbert S Bennett, Howard Hung
Abstract: The majority electron density as a function of the Fermi energy is calculated in zinc blende, compensated n-type GaSb for donor densities between 1016 cm-3 and 1019 cm-3. The compensation acceptor density is 1016 cm-3. These calculations solve the ch ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31933

126. Characterization of Ordered Mesoporous Silica Films Using Small Angle Neutron Scattering and X-Ray Porosimetry
Topic: Semiconductors
Published: 2/23/2005
Authors: B D. Vogt, R A. Pai, Hae-Jeong Lee, R C. Hedden, Christopher L Soles, Wen-Li Wu, Eric K Lin, Barry J. Bauer, J J. Watkins
Abstract: Ordered mesoporous silica films were synthesized using pre-organized block copolymer templates in supercritical carbon dioxide. Poly(ethylene oxide-block-propylene oxide-block-ethylene oxide), PEO-b-PPO-b-PEO, films doped with p-toluenesulfonic acid ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=852370

127. Micropatterning Neuronal Cells on Polyelectrolyte Multilayers
Topic: Semiconductors
Published: 7/7/2004
Authors: Darwin R Reyes-Hernandez, Elizabeth M. Perruccio, Patricia Becerra, Laurie E Locascio, Michael Gaitan
Abstract: This paper describes an approach to adhere retinal cells on micropatterned polyelectrolyte multilayer (PEM) lines adsorbed on polydimethylsiloxane (PDMS) surfaces, using microfluidic networks. PEMs were patterned on flat oxidized PDMS surfaces by seq ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31659

128. Characterization of Pore Structure in Nanoporous Low-Dielectric Constant Thin Film by Neutron Porosimetry X-Ray Porosimetry
Topic: Semiconductors
Published: 7/2/2004
Authors: R C. Hedden, Hae-Jeong Lee, Christopher L Soles, Barry J. Bauer
Abstract: A small-angle neutron scattering (SANS) porosimetry technique is presented for characterization of pore structure in nanoporous thin films. The technique is applied to characterize a spin-on organosilicate low dielectric constant (low-k) material wi ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=852279

129. Compound Semiconductor Roadmap Embedded in the 2003 International Technology Roadmap for Semiconductors
Topic: Semiconductors
Published: 7/1/2004
Author: Herbert S Bennett
Abstract: This paper contains higlights from a technology roadmap on compound semiconductors. This roadmap is part on an overall technology roadmap on RF and analog-mixed signal (AMS) technologies for wireless communications that is in the 2003 International T ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31661

130. Valence and Conduction Band Offsets of a ZrO2/SiOxNy/n-Si CMOS Gate Stack: A Combined Photoemission and Inverse Photoemission Study
Topic: Semiconductors
Published: 4/2/2004
Authors: Safak Sayan, Robert A Bartynski, Xin Zhao, Evgeni Gusev, David V Vanderbilt, Mark Croft, M M Banaszak-Holl, Eric Garfunkel
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=906325



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