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Topic Area: Semiconductors
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Displaying records 121 to 130 of 149 records.
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121. Spatial Distributions of Trapping Centers in HfO2/SiO2 Stacked Dielectrics
Topic: Semiconductors
Published: 4/1/2006
Authors: Da-Wei Heh, Eric M. Vogel, J B Bernstein, Chadwin Yang, George A. Brown, Gennadi Bersuker, Pui-Yee Hung, Alain C. Diebold
Abstract: An analysis methodology basd on charge pumping (CP) measurement was applied to extract the spatial depth profile of traps in the SiO2/HfO2 gate stacks. This analysis indicates that by changing CP measurement parameters it is possible to probe traps a ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32009

122. Test Structures for Study of Electron Transport in Nickel Silicide Features with Linewidths between 40 nm and 100 nm
Topic: Semiconductors
Published: 4/1/2006
Authors: Bin Li, Li Shi, Paul S. Ho, JiPing Zhou, Richard A Allen, Michael W Cresswell
Abstract: A new test structure has been designed and fabricated for the investigation of the effect of linewidth scaling on electron transport in nickel mono-silicide features. In the fabrication process, nickel silicide (NiSi) features were formed by annealin ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32176

123. Comparison of scanning capacitance microscopy and scanning Kelvin probe microscopy in determining two-dimensional doping profiles of Si homostructures
Topic: Semiconductors
Published: 2/1/2006
Authors: Seong-Eun Park, Nhan V Nguyen, Joseph J Kopanski, John S Suehle, Eric M. Vogel
Abstract: Two-dimensional (2-D) doping profiles of differently doped Si homostructures were investigated by scanning capacitance microscopy (SCM) and scanning Kelvin probe microscopy (SKPM). The calibrated doping concentration of the n-step Si layers was in th ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31963

124. Microhotplate-Based Sensor Platform for Submicron SoC Designs
Topic: Semiconductors
Published: 12/9/2005
Authors: Muhammad Yaqub Afridi, Allen R Hefner Jr, Jon C Geist, Colleen E. Hood, Ankush Varma, Bruce Jacob
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32489

125. Characterization System for Embedded Gas Sensor Systems-on-a-Chip
Topic: Semiconductors
Published: 12/1/2005
Authors: Muhammad Yaqub Afridi, Allen R Hefner Jr, Colleen E. Hood, Richard E Cavicchi, Stephen Semancik
Abstract: A characterization system is presented for evaluating critical functions of a microhotplate-based embedded gas-sensor for system-on-a-chip applications. The system uses a virtual instrument interface to control parts-per-billion (ppb) gas concentrati ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31903

126. Traceable Calibration of Critical-dimension Atomic Force Microscope Linewidth Measurements with Nanometer Uncertainty
Topic: Semiconductors
Published: 11/30/2005
Authors: Ronald G Dixson, Richard A Allen, William F Guthrie, Michael W Cresswell
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32210

127. Effect of Nitrogen on Band Alignment in HfSiON Gate Dielectrics
Topic: Semiconductors
Published: 11/22/2005
Authors: Safak Sayan, Nhan V Nguyen, James R. Ehrstein, James J Chambers, Mark R Visokay, Manuel Quevedo-Lopez, Luigi Colombo, T Yoder, Igor Levin, Daniel Fischer, M Paunescu, Ozgur Celik, Eric Garfunkel
Abstract: We have studied the band alignment of HfSiO and HfSiON films by soft x-ray photoemission (SXPS), oxygen K-edge x-ray absorption (XAS), and spectroscopic ellipsometry. Nitridation of HfSiO reduced the band gap by 1.50+- 0.05eV and the valence and cond ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32000

128. Optical Bandgaps and Composition Dependence of Hafnium Aluminate Thin Films grown by Atomic Layer Chemical Vapor Deposition
Topic: Semiconductors
Published: 11/17/2005
Authors: Nhan V Nguyen, Safak Sayan, Igor Levin, James R. Ehrstein, I.J.R. Baumvol, C. Driemeier, L Wielunski, Pui-Yee Hung, Alain C. Diebold
Abstract: Hafnium-aluminate (HfAlO) films grown on Si by Atomic Layer Chemical Vapor Deposition (ALCVD) of different aluminum contents were investigated in this article. Vacuum Ultra-Violet Spectroscopic Ellipsometry (VUV-SE), high Resolution Transmission Elec ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31774

129. Structural, Electronic, and Dielectric Properties of Ultrathin Zirconia Films on Silicon
Topic: Semiconductors
Published: 11/17/2005
Authors: Safak Sayan, Nhan V Nguyen, James R. Ehrstein, Tom Emge, Eric Garfunkel, Mark Croft, X Zhao, David V Vanderbilt, Ira Levin, Evgeni Gusev, Hyunjung Grace Kim
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=32146

130. Dependence of Electron Density on Fermi Energy in Compensated N-type Gallium Antimonide
Topic: Semiconductors
Published: 11/11/2005
Authors: Herbert S Bennett, Howard Hung
Abstract: The majority electron density as a function of the Fermi energy is calculated in zinc blende, compensated n-type GaSb for donor densities between 1016 cm-3 and 1019 cm-3. The compensation acceptor density is 1016 cm-3. These calculations solve the ch ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=31933



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