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Topic Area: Semiconductors

Displaying records 51 to 60 of 149 records.
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51. Electrical Characterization of Soluble Anthradithiophene Derivatives
Topic: Semiconductors
Published: 11/19/2009
Authors: Brad Conrad, Calvin Chan, Marsha A. Loth, John E Anthony, David J Gundlach
Abstract: Organic semiconductors remain an active subject for device physics and material science because of their varied electrical properties and potential for low-cost, high-throughput roll-to-roll processing. Several high-mobility oligomers, such as pen ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905388

52. Optical Properties of Semiconductors
Topic: Semiconductors
Published: 10/19/2009
Authors: David G Seiler, Stefan Zollner, Alain C. Diebold, Paul Amirtharaj
Abstract: Rapid advances in semiconductor manufacturing and associated technologies have increased the need for optical characterization techniques for materials analysis and in-situ monitoring/control applications. Optical measurements have many unique and at ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=33124

53. Wafer-level Hall Measurement on SiC MOSFET
Topic: Semiconductors
Published: 10/16/2009
Authors: Liangchun Yu, Kin P Cheung, Vinayak Tilak, Greg Dunne, Kevin Matocha, Jason P Campbell, John S Suehle, Kuang Sheng
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907098

54. Gate Oxide Long-Term Reliability of 4H-SiC MOS Devices
Topic: Semiconductors
Published: 10/14/2009
Authors: Liangchun Yu, Kin P Cheung, Greg Dunne, Kevin Matocha, John S Suehle, Kuang Sheng
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907099

55. Wafer-level Hall Measurement on SiC MOSFET
Topic: Semiconductors
Published: 10/11/2009
Authors: Liangchun Yu, Kin P Cheung, Vinayak Tilak, Greg Dunne, Kevin Matocha, Jason P Campbell, John S Suehle, Kuang Sheng
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=905438

56. Frontiers of Characterization and Metrology for Nanoelectronics: 2009
Topic: Semiconductors
Published: 10/5/2009
Authors: David G Seiler, Alain C. Diebold, Robert McDonald, C. Michael Garner, Dan Herr, Rajinder P. Khosla, Erik M Secula
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=904357

57. Relative Photon-to-Carrier Efficiencies of Alternating Nanolayers of Zinc Phthalocyanine and C60 Multilayer Films Assessed by Time-Resolved Terahertz Spectroscopy
Topic: Semiconductors
Published: 10/1/2009
Authors: Okan Esenturk, Joseph S Melinger, Paul A. Lane, Edwin J Heilweil
Abstract: Alternating multi-layer and 1:1 blended films of zinc phthalocyanine (ZnPc)and buckminsterfullerene (C60) were investigated as model active layers for solar cells by Time-Resolved Terahertz Spectroscopy (TRTS). Relative photon-to-carrier efficiencies ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=902140

58. Formation of Silicon-Based Molecular Electronic Structures Using Flip-chip Lamination
Topic: Semiconductors
Published: 8/11/2009
Authors: Mariona Coll Bau, Lauren H. Miller, Lee J Richter, Daniel R. Hines, Curt A Richter, Christina Ann Hacker
Abstract: The use of organic molecules to impart electrical surface properties has been a subject of intense research not only from a fundamental perspective but for many technological applications. In particular, organic molecules have been proposed as activ ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=901565

59. Development of a Seebeck Coefficient Standard Reference Material
Topic: Semiconductors
Published: 8/7/2009
Authors: Nathan Lowhorn, Winnie K Wong-Ng, John Lu, Evan L. Thomas, Makoto Otani, Martin L Green, Neil Dilley, Jeffrey Sharp, Thanh N. Tran
Abstract: We have successfully developed a Seebeck coefficient Standard Reference Material (SRM ), Bi2Te3, that is crucial for interlaboratory data comparison and for instrument calibration. Certification measurements were performed using two different techniq ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=854458

60. Effects of Polymorphism on Charge Transport in Organic Semiconductors
Topic: Semiconductors
Published: 8/3/2009
Authors: Oana Jurchescu, M. Devin, Sankar Subramanian, Sean R Parkin, Brandon Vogel, John E Anthony, Thomas Jackson, David J Gundlach
Abstract: The increasing interest in fluorinated 5,11-bis(triethylsilylethynyl)anthradithiophene (diF TES ADT) is motivated by the demonstrated high performance field-effect transistors and circuits based on this material, complemented by reduced complexity pr ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=33181



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