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Topic Area: Semiconductors

Displaying records 51 to 60 of 144 records.
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51. Frontiers of Characterization and Metrology for Nanoelectronics: 2009
Topic: Semiconductors
Published: 10/5/2009
Authors: David G Seiler, Alain C. Diebold, Robert McDonald, C. Michael Garner, Dan Herr, Rajinder P. Khosla, Erik M Secula
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=904357

52. Relative Photon-to-Carrier Efficiencies of Alternating Nanolayers of Zinc Phthalocyanine and C60 Multilayer Films Assessed by Time-Resolved Terahertz Spectroscopy
Topic: Semiconductors
Published: 10/1/2009
Authors: Okan Esenturk, Joseph S Melinger, Paul A. Lane, Edwin J Heilweil
Abstract: Alternating multi-layer and 1:1 blended films of zinc phthalocyanine (ZnPc)and buckminsterfullerene (C60) were investigated as model active layers for solar cells by Time-Resolved Terahertz Spectroscopy (TRTS). Relative photon-to-carrier efficiencies ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=902140

53. Formation of Silicon-Based Molecular Electronic Structures Using Flip-chip Lamination
Topic: Semiconductors
Published: 8/11/2009
Authors: Mariona Coll Bau, Lauren H. Miller, Lee J Richter, Daniel R. Hines, Curt A Richter, Christina Ann Hacker
Abstract: The use of organic molecules to impart electrical surface properties has been a subject of intense research not only from a fundamental perspective but for many technological applications. In particular, organic molecules have been proposed as activ ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=901565

54. Development of a Seebeck Coefficient Standard Reference Material
Topic: Semiconductors
Published: 8/7/2009
Authors: Nathan Lowhorn, Winnie K Wong-Ng, John Lu, Evan L. Thomas, Makoto Otani, Martin L Green, Neil Dilley, Jeffrey Sharp, Thanh N. Tran
Abstract: We have successfully developed a Seebeck coefficient Standard Reference Material (SRM ), Bi2Te3, that is crucial for interlaboratory data comparison and for instrument calibration. Certification measurements were performed using two different techniq ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=854458

55. Effects of Polymorphism on Charge Transport in Organic Semiconductors
Topic: Semiconductors
Published: 8/3/2009
Authors: Oana Jurchescu, M. Devin, Sankar Subramanian, Sean R Parkin, Brandon Vogel, John E Anthony, Thomas Jackson, David J Gundlach
Abstract: The increasing interest in fluorinated 5,11-bis(triethylsilylethynyl)anthradithiophene (diF TES ADT) is motivated by the demonstrated high performance field-effect transistors and circuits based on this material, complemented by reduced complexity pr ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=33181

56. Experimental Compressibilities and Structure Factors of Poly(ethylene glycol)Molecular Masses 2000 to 8000 in Aqueous-Solution
Topic: Semiconductors
Published: 6/5/2009
Author: Kenneth Alan Rubinson
Abstract: Small-Angle Neutron Scattering (SANS) is a powerful nondestructive technique that can measure simultaneously macroscopic compressibilities of solutions, overall shapes of macromolecular solutes, as well as their intermolecular structural correlation ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=33047

57. Indentation of Single-Crystal Silicon Nanolines: Buckling and Contact Friction at Nanoscale
Topic: Semiconductors
Published: 4/8/2009
Authors: Bin Li, Qiu Zhao, Huai Huang, Zhiquan Luo, Jay Im, Michael W. Cresswell, Richard A Allen, Min K. Kang, Rui Huang, Paul S. Ho
Abstract: Silicon nanostructures are essential building blocks for nanoelectronic devices and nano-electromechanical systems (NEMS). Mechanical characterization at nanoscale is important for practical applications but remains challenging as the mechanical prop ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=33156

58. Mapping the Edge-Roughness of Test Structure Features for Nanometer-Level CD Reference-Materials
Topic: Semiconductors
Published: 4/2/2009
Authors: Michael W Cresswell, M Davidson, Geraldine I. Mijares, Richard A Allen, Jon C Geist, M R Bishop
Abstract: The near-term objective of the work reported here is developing a protocol for rapidly mapping CD and edge roughness from high-resolution SEM images of reference-material features patterned on SCCDRM chips. The longer term mission is to formulate a ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=901520

59. EEEL Technical Accomplishments
Series: NIST Interagency/Internal Report (NISTIR)
Report Number: 7568
Topic: Semiconductors
Published: 3/30/2009
Author: Erik M Secula
Abstract: This document describes the technical work of the Electronics and Electrical Engineering Laboratory. In this report, you will find that EEEL researchers are developing the world's most advanced sensors, providing advanced gamma ray imagers for astro ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=901701

60. Test Chip to Evaluate Measurement Methods for Small Capacitances
Topic: Semiconductors
Published: 3/30/2009
Authors: Joseph J Kopanski, Muhammad Yaqub Afridi, Chong Jiang, Curt A Richter
Abstract: We designed and fabricated a test chip to help us evaluate the performance of new approaches to measurement of small capacitances (femto-Farads to atto-Farads range). The test chip consists of an array of metal-oxide-semiconductor capacitors, metal-i ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=901503



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